SURFACE ELECTRONIC STRUCTURE OF GAAS(001)-(2 X 4): ANGLE-RESOLVED PHOTOEMISSION AND TIGHT-BINDING CALCULATIONS
- Author
- LARSEN PK; VAN DER VEEN JF; MAZUR A; POLLMANN J; NEAVE JH; JOYCE BA
PHILIPS RES. LAB./EINDHOVEN 5600 MD/NLD - Source
- PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3222-3237; BIBL. 30 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE BANDE ETAT ELECTRONIQUE SURFACE GALLIUM ARSENIURE METHODE CALCUL EMISSION PHOTOELECTRONIQUE VARIATION ANGULAIRE RAYONNEMENT SYNCHROTRON COUCHE MINCE PHYSIQUE SOLIDE
- Keyword (en)
- BAND STRUCTURE SURFACE ELECTRON STATE GALLIUM ARSENIDES CALCULATING METHOD PHOTOELECTRON EMISSION ANGULAR VARIATION SYNCHROTRON RADIATION THIN FILM SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0493739
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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