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DETERMINATION OF THE OXYGEN PRECIPITATE-FREE ZONE WIDTH IN SILICON WAFERS FROM SURFACE PHOTOVOLTAGE MEASUREMENTS

Author
CHAPPELL TI; CHYE PW; TAVEL MA
IBM THOMAS J. WATSON RES. CENT./YORKTOWN HEIGHTS NY 10598/USA
Source
SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 33-36; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
TRAITEMENT SURFACE TRAITEMENT THERMIQUE SILICIUM PRECIPITE OXYDATION IMPURETE OXYGENE CRISTALLOGRAPHIE
Keyword (en)
SURFACE TREATMENT HEAT TREATMENT SILICON PRECIPITATE OXIDATION CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0495539

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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