INTERBAND CORRELATION OF POTENTIAL FLUCTUATIONS AND THE PHOTOSTRUCTURAL CHANGE IN GLASSY SEMICONDUCTORS
- Author
- ABE S
UNIV. TOKYO, INST. SOLID STATE PHYSICS/MINATO-KU TOKYO 106/JPN - Source
- JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; JPN; DA. 1982; VOL. 51; NO 11; PP. 3535-3543; BIBL. 28 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SEMICONDUCTEUR ETAT VITREUX TRANSITION PHASE FLUCTUATION STRUCTURE BANDE LIMITE ABSORPTION PHOTOGENERATION GENERATION PORTEUR CHARGE RECOMBINAISON PORTEUR CHARGE EFFET PHOTOINDUIT PHYSIQUE SOLIDE
- Keyword (en)
- SEMICONDUCTOR MATERIALS GLASSY STATE PHASE TRANSITIONS FLUCTUATIONS BAND STRUCTURE ABSORPTION EDGE PHOTOGENERATION CHARGE CARRIER GENERATION CHARGE CARRIER RECOMBINATION PHOTOINDUCED EFFECT SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0498550
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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