A MOBILITY MODEL FOR CARRIERS IN THE MOS INVERSION LAYER
- Author
- YAMAGUCHI K
HITACHI LTD/KOKUBUNJI-SHI TOKYO 185/JPN - Source
- IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 658-663; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR MOS COUCHE INVERSION MOBILITE PORTEUR CHARGE STRUCTURE MOS ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR MOS TRANSISTOR INVERSION LAYER CHARGE CARRIER MOBILITY MOS STRUCTURE ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0498977
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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