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LONG-TERM EFFECTS OF INJECTED ELECTRONS IN TUNNEL OXIDE ON THE ELECTRICAL CHARACTERISTICS OF AL GATE/THIN OXIDE/SI STRUCTURES-RELATIVELY LOW OXIDE FIELD CASE

Author
NAGAI K; HAYASHI Y
ELECTROTECHNICAL LAB./IBARAKI 305/JPN
Source
IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 715-717; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE MOS CAPACITE MOS EFFET TUNNEL CARACTERISTIQUE CAPACITE TENSION CARACTERISTIQUE COURANT TENSION INJECTION PORTEUR CHARGE ELECTRONIQUE
Keyword (en)
MOS STRUCTURE MOS CAPACITY TUNNEL EFFECT VOLTAGE CAPACITY CURVE VOLTAGE CURRENT CURVE CHARGE CARRIER INJECTION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0499013

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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