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A NOVEL METHOD TO DETECT NONEXPONENTIAL TRANSIENTS IN DEEP LEVEL TRANSIENT SPECTROSCOPY

Author
THURBER WB; FORMAN RA; PHILLIPS WE
NATIONAL BUREAU STANDARDS/WASHINGTON DC 20234/USA
Source
JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7397-7400; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
CARACTERISTIQUE CAPACITE TENSION REGIME TRANSITOIRE MODE BALAYAGE JONCTION P+ N SILICIUM NIVEAU DEFAUT CRISTALLIN DOPAGE DIODE PHYSIQUE SOLIDE
Keyword (en)
VOLTAGE CAPACITY CURVE UNSTEADY STATE SCANNING MODE P+ N JUNCTION SILICON CRYSTAL DEFECT LEVEL DOPING DIODE SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0500073

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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