GAP- STATE PROFILES OF A-SI: H DEDUCED BROM BELOWGAP OPTICAL ABSORPTION
- Author
- YAMASAKI S; OHEDA H; MATSUDA A; OKUSHI H; TANAKA K
ELECTROTECHNICAL LAB./IBARAKI 305/JPN - Source
- JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L539-L541; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NIVEAU IMPURETE ETAT LOCALISE DENSITE ETAT IMPURETE DOPAGE STRUCTURE BANDE ABSORPTION OPTIQUE ETAT AMORPHE SILICIUM IMPURETE HYDROGENE IMPURETE PHOSPHORE PHYSIQUE SOLIDE
- Keyword (en)
- IMPURITY LEVEL LOCALIZED STATE DENSITY OF STATES IMPURITY DOPING BAND STRUCTURE OPTICAL ABSORPTION AMORPHOUS STATE SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0500206
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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