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GAP- STATE PROFILES OF A-SI: H DEDUCED BROM BELOWGAP OPTICAL ABSORPTION

Author
YAMASAKI S; OHEDA H; MATSUDA A; OKUSHI H; TANAKA K
ELECTROTECHNICAL LAB./IBARAKI 305/JPN
Source
JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L539-L541; BIBL. 11 REF.
Document type
Article
Language
English
Keyword (fr)
NIVEAU IMPURETE ETAT LOCALISE DENSITE ETAT IMPURETE DOPAGE STRUCTURE BANDE ABSORPTION OPTIQUE ETAT AMORPHE SILICIUM IMPURETE HYDROGENE IMPURETE PHOSPHORE PHYSIQUE SOLIDE
Keyword (en)
IMPURITY LEVEL LOCALIZED STATE DENSITY OF STATES IMPURITY DOPING BAND STRUCTURE OPTICAL ABSORPTION AMORPHOUS STATE SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL83X0500206

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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