DEEP DEFECT STATES IN QUENCHED, GAMMA-IRRADIATED GERMANIUMTAVENDALE AJ; PEARTON SJ.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 69; NO 1-2; PP. 39-46; BIBL. 19 REF.Article

ELECTRONIC AND SPIN CONFIGURATIONS OF CO³⁺ AND NI ³⁺ IONS IN OXIDES OF K₂NIF₄ STRUCTURE: A MAGNETIC SUSCEPTIBILITY STUDYMOHAN RAM RA; SINGH KK; MADHUSUDAN WH et al.1983; MATERIALS RESEARCH BULLETIN; ISSN 0025-5408; USA; DA. 1983; VOL. 18; NO 6; PP. 703-712; BIBL. 14 REF.Article

PARTIALLY OXIDISED TETRACYANOPLATINATE COMPLEXES CONTAINING BOTH DIVALENT AND MONOVALENT CATIONSCOLES GSV; UNDERHILL AE; CARNEIRO K et al.1983; DALTON TRANSACTIONS; ISSN 0300-9246; GBR; DA. 1983; NO 7; PP. 1411-1415; BIBL. 20 REF.Article

THE GE/AU INTERFACE INVESTIGATED WITH PHOTOEMISSION AT THE COOPER MINIMUMPERFETTI P; ROSSI G; LINDAU I et al.1983; SURFACE SCIENCE; ISSN 0039-6028; NLD; DA. 1983; VOL. 124; NO 2-3; PP. L19-L24; BIBL. 21 REF.Article

THEORY OF THE KINETIC COEFFICIENTS OF THE ATOMICALLY ROUGH SURFACE OF ⁴HE CRYSTALSBOWLEY RM; EDWARDS DO.1983; JOURNAL DE PHYSIQUE; ISSN 0302-0738; FRA; DA. 1983; VOL. 44; NO 6; PP. 723-736; ABS. FRE; BIBL. 24 REF.Article

CONTRIBUTION A L'ETUDE DES PROPRIETES MAGNETIQUES DES COMPOSES TERNAIRES GRAPHITE-MNCL₂-ALCL₃ = STUDY OF THE MAGNETIC PROPERTIES OF THE TERNARY GRAPHITE-MNCL₂-ALCL₃ COMPOUNDSVANGELISTI R; MARECHE JF; FURDIN G et al.1983; COMPTES RENDUS DES SEANCES DE L'ACADEMIE DES SCIENCES. SERIE 2: MECANIQUE, PHYSIQUE, CHIMIE, SCIENCES DE L'UNIVERS, SCIENCES DE LA TERRE; ISSN 0750-7623; FRA; DA. 1983; VOL. 296; NO 9; PP. 691-694; ABS. ENG; BIBL. 11 REF.Article

OBTENTION ET PROPRIETES DES MONOCRISTAUX D'ORTHOTELLURATE DE PLOMB PB₃TEO₆KOSSE LI; POLITOVA ED; BUSH AA et al.1983; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1983; VOL. 28; NO 3; PP. 514-517; BIBL. 9 REF.Article

CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS BY AUGER ELECTRON SPECTROSCOPY AND ELECTRON ENERGY LOSS SPECTROSCOPYHEZEL R; LIESKE N.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1671-1674; BIBL. 26 REF.Article

CORRELATION BETWEEN CHEMICAL AND ELECTRICAL PROFILES IN SI⁺, SE⁺ AND S⁺ IMPLANTED BULK AND EPITAXIAL GAASKANBER H; FENG M; EU VK et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1083-1114; BIBL. 38 REF.Article

CRYSTAL STRUCTURE AND LATTICE DYNAMICS OF CHLORINE: THE ROLE OF ELECTROSTATIC AND ANISOTROPIC ATOM-ATOM POTENTIALSBURGOS E; MURPHY CS; RIGHINI R et al.1982; MOLECULAR PHYSICS; ISSN 0026-8976; GBR; DA. 1982; VOL. 47; NO 6; PP. 1391-1403; BIBL. 28 REF.Article

CYCLIC DEFORMATION IN AL-4 WT.% CU ALLOY SINGLE CRYSTALS CONTAINING COHERENT THETA " PRECIPITATES. II: DISLOCATION MICROSTRUCTURESJIA KUEN LEE; LAIRD C.1982; MATER. SCI. ENG.; ISSN 0025-5416; CHE; DA. 1982; VOL. 54; NO 1; PP. 53-64; BIBL. 27 REF.Article

EFFECT OF HYDROGEN ABSORPTION ON THE MAGNETIC PROPERTIES OF ZRMN_2-XFE_X TERNARIES WITH A C14 STRUCTUREFUJII H; SINHA VK; POURARIAN F et al.1982; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1982; VOL. 85; NO 1; PP. 43-54; BIBL. 28 REF.Article

EFFECT OF OXIDE PRECIPITATES ON MINORITY-CARRIER LIFETIME IN CZOCHRALSKI-GROWN SILICONMIYAGI M; WADA K; OSAKA J et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 719-721; BIBL. 8 REF.Article

ELECTRICAL RESISTIVITY AND SUPERCONDUCTIVITY IN THE CHEVREL PHASE COMPOUNDS OF THE TYPE CU_1.8MO₆S_8-YSE_Y, (O <OU= Y <OU= 8) AND CU_1.8MO₆S_8-YTE_Y, (O <OU= Y <OU= 4)SANKARANARAYANAN V; RANGARAJAN G; SRINIVASAN R et al.1982; CRYOGENICS (SURREY); ISSN 0011-2275; GBR; DA. 1982; VOL. 22; NO 6; PP. 305-309; BIBL. 25 REF.Article

EPITAXIAL GROWTH OF HGTE BY A MOVPE PROCESSIRVINE SJC; MULLIN JB; ROYLE A et al.1982; J. CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 1; PP. 15-20; BIBL. 17 REF.Article

GROWTH AND PROPERTIES OF NEW ARTIFICIAL DOPING SUPERLATTICES IN GAASPLOOG K; KUENZEL H.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 3; PP. 5-22; BIBL. 59 REF.Article

GROWTH OF HIGH QUALITY EPITAXIAL GE FILMS ON (100) SI BY SPUTTER DEPOSITIONBAJOR G; CADIEN KC; RAY MA et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 696-698; BIBL. 11 REF.Article

GROWTH OF INP AND INGAASP (EG >OU= 1.15EV) LAYERS BY LIQUID PHASE EPITAXY UNDER PHOSPHORUS OVERPRESSUREKERAMIDAS VG; TEMKIN H; BONNER WA et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 731-733; BIBL. 15 REF.Article

HETEROEPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR BEAM EPITAXYKAWANAMI H; SAKAMOTO T; TAKAHASHI T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L68-L70; BIBL. 15 REF.Article

HIGH CYCLE FATIGUE BEHAVIOR OF SPINODAL CU-10 WT.% NI-6 WT.% SNQUIN MP; SCHWARTZ LH.1982; MATER. SCI. ENG.; ISSN 0025-5416; CHE; DA. 1982; VOL. 54; NO 1; PP. 121-126; BIBL. 15 REF.Article

IMPROVING THE ELECTRICAL PROPERTIES OF VAPOR GROWN III-V COMPOUNDS BY COOLING THE HCL LIQUID SOURCEENSTROM RE; APPERT JR.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2566-2569; BIBL. 15 REF.Article

IN SITU ETCHING OF GAAS USING ASCL₃ IN MOVPE. IIEL JANI B; GUITTARD M; GRENET JC et al.1982; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 60; NO 1; PP. 131-135; BIBL. 10 REF.Article

INTERACTION OF MAGNETOSTATIC AND MAGNETOELASTIC WAVES WITH GROWTH INHOMOGENEITIES IN IRON GARNET SINGLE CRYSTALSBEZMATERNYKH LN; MASHENKO VG; SOKOLOVA NA et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 469-474; ABS. RUS; BIBL. 6 REF.Article

INVESTIGATION OF CVD SILICON NITRIDE ENCAPSULATION FOR GALLIUM ARSENIDELEIGH PA.1982; IND. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 1; PP. 23-41; BIBL. 14 REF.Article

IRON(III)-PORPHYRIN PI -CATION RADICAL COMPLEXES. MOLECULAR STRUCTURES AND MAGNETIC PROPERTIESBUISSON G; DERONZIER A; DUEE E et al.1982; JOURNAL OF THE AMERICAN CHEMICAL SOCIETY; ISSN 0002-7863; USA; DA. 1982; VOL. 104; NO 24; PP. 6793-6796; BIBL. 24 REF.Article