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A mechanism-based model for deformation twinning in polycrystalline FCC steelWANG, Y. Y; SUN, X; WANG, Y. D et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 607, pp 206-218, issn 0921-5093, 13 p.Article
Contribution of stacking fault in lowering the theoretical density of nickelMITTRA, Joy; WAGHMARE, Umesh V; ARYA, Ashok et al.Computational materials science. 2014, Vol 81, pp 249-252, issn 0927-0256, 4 p.Article
Hydride vapor phase epitaxy of high quality {1013} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheresJIANKUN YANG; TONGBO WEI; ZIQIANG HUO et al.Journal of crystal growth. 2014, Vol 387, pp 101-105, issn 0022-0248, 5 p.Article
In-situ, ex-situ EBSD and (HR-)TEM analyses of primary, secondary and tertiary twin development in an Mg-4 wt%Li alloyLENTZ, M; COELHO, R. S; CAMIN, B et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 610, pp 54-64, issn 0921-5093, 11 p.Article
Microstructural evolution and microhardness change of Al―7wt%Si―0.3wt%Mg alloy granules/powder particles during high energy ball millingLIANG, J. M; JIA, M. T; GUO, X. Q. et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2014, Vol 590, pp 307-313, issn 0921-5093, 7 p.Article
Three ranges of the angular dependence of critical current of BaZrO3 doped YBa2Cu3O7 ― δ thin films grown at different temperaturesMALMIVIRTA, M; YAO, L. D; HUHTINEN, H et al.Thin solid films. 2014, Vol 562, pp 554-560, issn 0040-6090, 7 p.Article
Development of grain structure during friction-stir welding of Cu-30Zn brassMIRONOV, S; INAGAKI, K; SATO, Y. S et al.Philosophical magazine (2003. Print). 2014, Vol 94, Num 25-27, pp 3137-3148, issn 1478-6435, 12 p.Article
Direct observation of solute-dislocation interaction on extended edge dislocation in irradiated austenitic stainless steelHATAKEYAMA, Masahiko; YAMAGATA, Ichiro; MATSUKAWA, Yoshitaka et al.Philosophical magazine letters. 2014, Vol 94, Num 1-3, pp 18-24, issn 0950-0839, 7 p.Article
Interplay between {1 0 1 2} deformation twins and basal stacking faults enriched with Zn/Y in Mg97Zn1Y2 alloySHAO, X. H; YANG, Z. Q; MA, X. L et al.Philosophical magazine letters. 2014, Vol 94, Num 1-3, pp 150-156, issn 0950-0839, 7 p.Article
Thermal stability of nanotwinned and nanocrystalline microstructures produced by cryogenic shear deformationSAGAPURAM, D; WANG, Z; SALDANA, C et al.Philosophical magazine (2003. Print). 2014, Vol 94, Num 28-30, pp 3413-3430, issn 1478-6435, 18 p.Article
Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)KUWANO, Noriyuki; RYU, Yuki; MITSUHARA, Masatoshi et al.Journal of crystal growth. 2014, Vol 401, pp 409-413, issn 0022-0248, 5 p.Conference Paper
Effects of Transition Metal Substitution on the Thermoelectric Properties of Metallic (BiS)1.2(TiS2)2 Misfit Layer SulfidePUTRI, Yulia Eka; CHUNLEI WAN; FENG DANG et al.Journal of electronic materials. 2014, Vol 43, Num 6, pp 1870-1874, issn 0361-5235, 5 p.Conference Paper
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPEGOGOVA, D; WAGNER, G; BALDINI, M et al.Journal of crystal growth. 2014, Vol 401, pp 665-669, issn 0022-0248, 5 p.Conference Paper
Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substratesYING DING; JIANGHUA CHEN; JUNMING HE et al.Journal of crystal growth. 2013, Vol 383, pp 19-24, issn 0022-0248, 6 p.Article
The dissociation of the [a + c] dislocation in GaNHIRSCH, P. B; LOZANO, J. G; NELLIST, P. D et al.Philosophical magazine (2003. Print). 2013, Vol 93, Num 28-30, pp 3925-3938, issn 1478-6435, 14 p.Article
Effects of Sn on defect structures in high-speed deformed Ni-Sn alloySATO, Koichi; QIU XU; YOSHIIE, Toshimasa et al.Philosophical magazine letters. 2013, Vol 93, Num 10-12, pp 567-574, issn 0950-0839, 8 p.Article
Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiCFANGZHEN WU; HUANHUAN WANG; BYRAPPA, Shayan et al.Journal of electronic materials. 2013, Vol 42, Num 5, pp 787-793, issn 0361-5235, 7 p.Conference Paper
First principle study on generalized stacking fault energy and surface energy of B2-AgRE intermetallicsLILI LIU; XIAOZHI WU; RUI WANG et al.Physica. B, Condensed matter. 2012, Vol 407, Num 21, pp 4117-4122, issn 0921-4526, 6 p.Article
Improvements in (112̄2) semipolar GaN crystal quality by graded superlatticesXU, S. R; ZHANG, J. C; CAO, Y. R et al.Thin solid films. 2012, Vol 520, Num 6, pp 1909-1912, issn 0040-6090, 4 p.Article
Nitrogen-induced dynamic strain aging in a biomedical-grade Co-Cr-Mo alloyYAMANAKA, Kenta; MORI, Manami; CHIBA, Akihiko et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2012, Vol 552, pp 69-75, issn 0921-5093, 7 p.Article
Wide stacking fault of aluminum for multilayered TiB2/Al-Ni composite by roll bonding processWANG, Q. W; FAN, G. H; GENG, L et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2012, Vol 534, pp 609-613, issn 0921-5093, 5 p.Article
Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substratesHUY NGUYEN, Van; DOBBIE, A; MYRONOV, M et al.Thin solid films. 2012, Vol 520, Num 8, pp 3222-3226, issn 0040-6090, 5 p.Conference Paper
Crystal growth and perfection of large octahedral synthetic diamondsKHOKHRYAKOV, Alexander F; PALYANOV, Yuri N; KUPRIYANOV, Igor N et al.Journal of crystal growth. 2011, Vol 317, Num 1, pp 32-38, issn 0022-0248, 7 p.Article
Defect reduction in (1 1 2 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayersXU, S. R; ZHANG, J. C; HAO, Y et al.Journal of crystal growth. 2011, Vol 327, Num 1, pp 94-97, issn 0022-0248, 4 p.Article
Direct or indirect semiconductor: The role of stacking fault in h-BNYIN, J. L; HU, M. L; ZHIZHOU YU et al.Physica. B, Condensed matter. 2011, Vol 406, Num 11, pp 2293-2297, issn 0921-4526, 5 p.Article
