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Electromigration in Sn-Ag solder thin films under high current densityZHU, X; KOTADIA, H; XU, S et al.Thin solid films. 2014, Vol 565, pp 193-201, issn 0040-6090, 9 p.Article
Mass Transport across the Porous Oxide Shells of Core―Shell and Yolk―Shell Nanostructures in Liquid PhaseJIE LI; XIAOLIANG LIANG; JI BONG JOO et al.Journal of physical chemistry. C. 2013, Vol 117, Num 39, pp 20043-20053, issn 1932-7447, 11 p.Article
Contribution of thickness dependent void fraction and TiSixOy interlayer to the optical properties of amorphous TiO2 thin filmsFAN ZHANG; ZHANG, Rong-Jun; ZHENG, Yu-Xiang et al.Thin solid films. 2013, Vol 548, pp 275-279, issn 0040-6090, 5 p.Article
Effect of Cavity Architecture on the Surface-Enhanced Emission frorr Site-Selective Nanostructured Cavity ArraysLORDAN, Frances; RICE, James H; JOSE, Bincy et al.Journal of physical chemistry. C. 2012, Vol 116, Num 2, pp 1784-1788, issn 1932-7447, 5 p.Article
Chemically-modified graphene sheets as an active layer for eco-friendly metal electroplating on plastic substratesOH, Joon-Suk; HWANG, Taeseon; NAM, Jae-Do et al.Thin solid films. 2012, Vol 521, pp 270-274, issn 0040-6090, 5 p.Conference Paper
Low defect interface study of intrinsic layer for c-Si surface passivation in a-Si:H/c-Si heterojunction solar cellsKIM, Sangho; VINH AI DAO; SHIN, Chonghoon et al.Thin solid films. 2012, Vol 521, pp 45-49, issn 0040-6090, 5 p.Conference Paper
Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometryKAMINENI, Vimal K; SINGH, Pratibha; KONG, Laywai et al.Thin solid films. 2011, Vol 519, Num 9, pp 2924-2928, issn 0040-6090, 5 p.Conference Paper
Optical characterization of nanocrystals in silicon rich oxide superlattices and porous siliconAGOCS, E; PETRIK, P; MILITA, S et al.Thin solid films. 2011, Vol 519, Num 9, pp 3002-3005, issn 0040-6090, 4 p.Conference Paper
Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition systemKUMAR SAHA, Jhantu; BAHARDOUST, Barzin; LEONG, Keith et al.Thin solid films. 2011, Vol 519, Num 9, pp 2863-2866, issn 0040-6090, 4 p.Conference Paper
Aggregate structure of single-nano buckydiamond in gel and dried powder by differential scanning calorimetry and nitrogen adsorptionKOROBOV, Mikhail V; BATUK, Maria M; AVRAMENKO, Natalia V et al.Diamond and related materials. 2010, Vol 19, Num 5-6, pp 665-671, issn 0925-9635, 7 p.Article
Correlation between structural and opto-electronic properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapour depositionAMBROSONE, G; BASA, D. K; COSCIA, U et al.Thin solid films. 2010, Vol 518, Num 20, pp 5871-5874, issn 0040-6090, 4 p.Article
Optical properties of single-wall carbon nanotube films deposited on Si/SiO2 wafersSOETEDJO, Hariyadi; MORA, Maria F; GARCIA, Carlos D et al.Thin solid films. 2010, Vol 518, Num 14, pp 3954-3959, issn 0040-6090, 6 p.Article
Stress evolution in magnetron sputtered Ti-Zr-N and Ti-Ta-N films studied by in situ wafer curvature: Role of energetic particlesABADIAS, G; KOUTSOKERAS, L. E; GUERIN, Ph et al.Thin solid films. 2010, Vol 518, Num 5, pp 1532-1537, issn 0040-6090, 6 p.Article
Structure-dependent behavior of stress-induced voiding in Cu interconnectsWU, Zhen-Yu; YANG, Yin-Tang; CHAI, Chang-Chun et al.Thin solid films. 2010, Vol 518, Num 14, pp 3778-3781, issn 0040-6090, 4 p.Article
Superconformal copper filling of a nano-scale trench by nucleation suppression at the trench entrance during metal organic chemical vapor depositionMOON, H. K; KIM, S. I; JO, S. K et al.Thin solid films. 2010, Vol 518, Num 22, pp 6455-6459, issn 0040-6090, 5 p.Article
Influence of microwave annealing on direct bonded silicon wafersALFORD, T. L; TANG, T; THOMPSON, D. C et al.Thin solid films. 2008, Vol 516, Num 8, pp 2158-2161, issn 0040-6090, 4 p.Article
Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution processNIIKURA, Chisato; BRENOT, Romain; GUILLET, Joelle et al.Thin solid films. 2008, Vol 516, Num 5, pp 568-571, issn 0040-6090, 4 p.Conference Paper
Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidationWOO SIG MIN; DONG JOON KIM; SUNG GYU PYO et al.Thin solid films. 2007, Vol 515, Num 7-8, pp 3875-3880, issn 0040-6090, 6 p.Article
Nickel pulse reversal plating for image reversal of ultrathin electron beam resistAWAD, Yousef; LAVALLEE, Eric; BEAUVAIS, Jacques et al.Thin solid films. 2007, Vol 515, Num 5, pp 3040-3045, issn 0040-6090, 6 p.Article
Probing into the asymmetric nature of electromigration performance of submicron interconnect via structureROY, Arijit; CHER MING TAN.Thin solid films. 2007, Vol 515, Num 7-8, pp 3867-3874, issn 0040-6090, 8 p.Article
The stannides ScNi1.54(i)Sn and ScNi 1.085(1)Sn - structures, 45Sc NMR and 119Sn Mössbauer spectroscopySEBASTIAN, C. Peter; ECKERT, Hellmut; PÖTTGEN, Rainer et al.Solid state sciences. 2007, Vol 9, Num 5, pp 357-361, issn 1293-2558, 5 p.Article
Structural characterization of thin amorphous Si filmsGROZDANIC, D; RAKVIN, B; PIVAC, B et al.Thin solid films. 2007, Vol 515, Num 14, pp 5620-5623, issn 0040-6090, 4 p.Conference Paper
The influence of substrate morphology on the growth of thin silicon films : A GISAXS studyGRACIN, D; BEMSTORFF, S; DUBCEK, P et al.Thin solid films. 2007, Vol 515, Num 14, pp 5615-5619, issn 0040-6090, 5 p.Conference Paper
Modelling local voids using an irregular polyhedron based on natural neighbourhood and application to characterize near-dense random packing (DRP)SAHU, K. K; ISHIHARA, K. N.Philosophical magazine (2003. Print). 2006, Vol 86, Num 36, pp 5909-5926, issn 1478-6435, 18 p.Article
Analysis of migration paths in fast-ion conductors with Voronoi-Dirichlet partitionBLATOV, Vladislav A; ILYUSHIN, Gregory D; BLATOVA, Olga A et al.Acta crystallographica. Section B, Structural science. 2006, Vol 62, Num 6, pp 1010-1018, issn 0108-7681, 9 p.Article
