Electronic structure of random binary alloys : An augmented space formulation in reciprocal spaceKAMAL KRISHNA SAHA; MOOKERJEE, Abhijit; JEPSEN, Ove et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 9, pp 094207.1-094207.10, issn 1098-0121Article

Direct imaging of the valence electronic structure of solids by (e,2e) spectroscopyCAI, Y. Q; VOS, M; STORER, P et al.Solid state communications. 1995, Vol 95, Num 1, pp 25-29, issn 0038-1098Article

Polarons and their endor spectra in poly(p-phenylene vinylene)SHIMOI, Y; ABE, S; KURODA, S.-I et al.Solid state communications. 1995, Vol 95, Num 3, pp 137-141, issn 0038-1098Article

Theory of electronic properties of amorphous silicon-carbon alloys. Effects of short-range disorderKELIRES, P. C; DENTENEER, P. J. H.Solid state communications. 1993, Vol 87, Num 9, pp 851-855, issn 0038-1098Article

The influence of antimony impurity on optical and electrical properties of amorphous seleniumVENUGOPAL REDDY, K; BHATNAGAR, A. K; SRIVASTAVA, V et al.Journal of physics. Condensed matter (Print). 1992, Vol 4, Num 23, pp 5273-5280, issn 0953-8984Article

Soft configurations and anomalous properties of non-metallic glassesKLINGER, M.Journal of non-crystalline solids. 1992, Vol 149, Num 1-2, pp 1-4, issn 0022-3093Conference Paper

Electronic states spectrum for lead silicates glasses with different short-range order structuresGUBANOV, V. A; ZATSEPIN, A. F; KORTOV, V. S et al.Journal of non-crystalline solids. 1991, Vol 127, Num 3, pp 259-266, issn 0022-3093, 8 p.Article

Effect of RF power on the structure and related gap states in hydrogenated amorphous siliconBABRAS, S; RAJARSHI, S. V; DUSANE, R. O et al.Journal of non-crystalline solids. 1990, Vol 119, Num 3, pp 342-346, issn 0022-3093, 5 p.Article

On the origin of exponential band tails in amorphous semiconductorsSILVER, M; PAUTMEIER, L; BÄSSLER, H et al.Solid state communications. 1989, Vol 72, Num 2, pp 177-180, issn 0038-1098Article

Etude des distributions électroniques des semiconducteurs amorphes et cristallisés GaAs et Ge_1-*Se_*Guita, Sadreddine; Bonnelle, Christiane.1989, 99 p.Thesis

Analytical determination of the density-of-gap-states distribution in amorphous semiconductors: experimental resultsAUGELLI, V; BERARDI, V; MURRI, R et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 2, pp 614-618, issn 0163-1829Article

Investigations of the electron structure of ion-implanted amorphous germaniumPETO, G; KANSKI, J; SODERVALL, U et al.Physics letters. A. 1987, Vol 124, Num 9, pp 510-514, issn 0375-9601Article

Electronic structure of amorphous GeS: justification of the Bethe lattice approachMASEK, J.Solid state communications. 1986, Vol 57, Num 3, pp 199-201, issn 0038-1098Article

Dangling bond in a-Si:HBAR-YAM, Y; JOANNOPOULOS, J. D.Physical review letters. 1986, Vol 56, Num 20, pp 2203-2206, issn 0031-9007Article

Electrical and optical properties of the As―Te―In and Ge―Se―In chalcogenide systemsKOSEK, F; CIMPL, Z; MIKHAILOV, M. D et al.Journal of non-crystalline solids. 1986, Vol 86, Num 3, pp 265-270, issn 0022-3093Article

Electronic states in disordered systems with statistical correlations: self-consistent Born approximationMASEK, J.Zeitschrift für Physik. B, Condensed matter. 1986, Vol 64, Num 2, pp 145-150, issn 0722-3277Article

Exactly exponential band tail in a glassy semiconductorMONROE, D; KASTNER, M. A.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8881-8884, issn 0163-1829, 2Article

A theory of band-gap fluctuations in amorphous semiconductorsROBERTS, M; DUNSTAN, D. J.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 28, pp 5429-5433, issn 0022-3719Article

Electronic properties of amorphous carbon filmsBREDAS, J. L; STREET, G. B.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 21, pp L651-L655, issn 0022-3719Article

Theory of gap states in a-Si and a-Si: H. II: Rigorous energy bounds for hydrogenated bond statesMATSUBARA, T; SAKAKURA, Y.Journal of the Physical Society of Japan. 1984, Vol 53, Num 1, pp 296-301, issn 0031-9015Article

Electronic structure of hydrogenated and unhydrogenated amorphous SiN_x (0≤x≤1.6): a photoemission studyKÄRCHER, R; LEY, L; JOHNSON, R. L et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 1896-1910, issn 0163-1829Article

On the problem of the formation energy of charged dangling bonds in vitreous silicaFILIPOVICH, V. N; KLIMCHITSKAYA, G. L; SHCHEGOLEV, B. F et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 34, pp 6561-6564, issn 0022-3719Article

Electronic wave functions of quasiperiodic systems in momentum spaceROLOF, Sebastian; THIEM, Stefanie; SCHREIBER, Michael et al.The European physical journal. B, Condensed matter physics (Print). 2013, Vol 86, Num 9, issn 1434-6028, 372.1-372.14Article

Disordered two-dimensional electron systems with chiral symmetryMARKOS, P; SCHWEITZER, L.Physica. B, Condensed matter. 2012, Vol 407, Num 20, pp 4016-4022, issn 0921-4526, 7 p.Conference Paper

Characteristics of the fine structure of the valence electron spectra of glassy carbonBAITINGER, E. M; PESIN, L. A; KUZNETSOV, V. L et al.Soviet physics. Solid state. 1991, Vol 33, Num 11, pp 1781-1783, issn 0038-5654Article