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Donor electron wave functions for phosphorus in silicon : Beyond effective-mass theoryWELLARD, C. J; HOLLENBERG, L. C. L.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085202.1-085202.8, issn 1098-0121Article

Theory of photoinduced charge separation in solidsMIKHELASHVILI, M. S; AGAM, Oded.Journal of luminescence. 2005, Vol 114, Num 2, pp 145-154, issn 0022-2313, 10 p.Article

Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:CASHWIN, M. J; DAVIDSON, B. R; WOODHOUSE, K et al.Semiconductor science and technology. 1993, Vol 8, Num 5, pp 625-629, issn 0268-1242Article

Charge of the DX ground state in Ga_1-xAl_xAsBOURGOIN, J. C; ZAZOUI, M.Physical review. B, Condensed matter. 1993, Vol 47, Num 23, pp 15939-15941, issn 0163-1829Article

Comparison of PICTS measurements on Si-GaAs interpreted within generalized physical modelsHLINOMAZ, P; SMID, V; KRISTOFIK, J et al.Solid state communications. 1993, Vol 86, Num 6, pp 357-361, issn 0038-1098Article

Deep level transient spectroscopy characterization of defects introduced in n-GaAs after alpha irradiation at 15 KGOODMAN, S. A; AURET, F. D.Japanese journal of applied physics. 1993, Vol 32, Num 8B, pp L1120-L1122, issn 0021-4922, 2Article

Defects in electron irradiated GaInPZAIDI, M. A; ZAZOUI, M; BOURGOIN, J. C et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7229-7231, issn 0021-8979, 1Article

Electrical and optical characterization of niobium-related centres in siliconPETTERSSON, H; GRIMMEISS, H. G; TILLY, L et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1247-1252, issn 0268-1242Article

Energy levels and electrical activity of dislocation electron states in GaAsWOSINSKI, T; FIGIELSKI, T.Acta physica Polonica. A. 1993, Vol 83, Num 1, pp 51-59, issn 0587-4246Article

Stability of transition-metal impurities in ionic fluorides from approximate Hartree-Fock cluster calculationsBERMEJO, M; RECIO, J. M; FLOREZ, M et al.Journal of solid state chemistry (Print). 1993, Vol 102, Num 1, pp 226-235, issn 0022-4596Article

Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500°CLONDOS, C. A; BINNS, M. J; BROWN, A. R et al.Applied physics letters. 1993, Vol 62, Num 13, pp 1525-1526, issn 0003-6951Article

Electrical characterization of defects introduced in η-GaAs by alpha and beta irradiation from radionuclidesAURET, F. D; GOODMAN, S. A; MYBURG, G et al.Applied physics. A, Solids and surfaces. 1993, Vol 56, Num 6, pp 547-553, issn 0721-7250Article

Field dependence of emission and capture rates of DX-related centers in Al_xGa_1-xAsJIA, Y. B; GRIMMEISS, H. G.Physical review. B, Condensed matter. 1993, Vol 47, Num 4, pp 1858-1865, issn 0163-1829Article

Field effect on thermal emission from the 0.40 eV electron level in InGaPZHU, Q. S; HIRAMATSU, K; SAWAKI, N et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 771-774, issn 0021-8979Article

Fully relaxed point defects in crystalline siliconSONG, E. G; KIM, E; LEE, Y. H et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 3, pp 1486-1489, issn 0163-1829Article

Gamma induced centres in liquid phase epitaxial gallium arsenideALEXIEV, D; TANSLEY, T. L; BUTCHER, K. S. A et al.Japanese journal of applied physics. 1993, Vol 32, Num 1A, pp 166-167, issn 0021-4922, 1Article

Hydrogen and defects in first-principles molecular-dynamics-modeled a-Si:HFEDDERS, P. A; DRABOLD, D. A.Physical review. B, Condensed matter. 1993, Vol 47, Num 20, pp 13277-13282, issn 0163-1829Article

Localization with interacting impurities and a finite-range electron-impurity potentialBEAL-MONOD, M. T; FORGACS, G.Physical review. B, Condensed matter. 1993, Vol 47, Num 14, pp 9077-9079, issn 0163-1829Article

Observation of the DX center in Pb-doped GaAsWILLKE, U; MAUDE, D. K; SALLESE, J. M et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3467-3469, issn 0003-6951Article

Origin of the T^1.3 power law of pure dephasing for impurity electronic transitions in amorphous solidsJANKOWIAK, R; SMALL, G. J.Chemical physics letters. 1993, Vol 207, Num 4-6, pp 436-442, issn 0009-2614Article

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambientsKOZUCH, D. M; STAVOLA, M; PEARTON, S. J et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3716-3724, issn 0021-8979Article

Phosphorus vacancy in InP : a negative-U centerALATALO, M; NIEMINEN, R. M; PUSKA, M. J et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 11, pp 6381-6384, issn 0163-1829Article

Photoquenching and thermal recovery of a thermally stimulated current peak in semi-insulating GaAsFANG, Z.-Q; LOOK, D. C.Journal of applied physics. 1993, Vol 73, Num 10, pp 4971-4974, issn 0021-8979, 1Article

Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperatureWAI SHING LAU; CHUEN HANG GOO; TOW CHONG CHONG et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp L1192-L1195, issn 0021-4922, 2Article