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Quantum computing with defects : MATERIALS ISSUES FOR QUANTUM COMPUTATIONGORDON, Luke; WEBER, Justin R; VARLEY, Joel B et al.MRS bulletin. 2013, Vol 38, Num 10, pp 802-807, issn 0883-7694, 6 p.Article
Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surfaceOGAWA, Masatoshi; KAMIYA, Shoji; IZUMI, Hayato et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 3034-3037, issn 0921-4526, 4 p.Conference Paper
Electronic structure of Zn, Cu and Ni impurities in germaniumSILVA, E. L; COUTINHO, J; CARVALHO, A et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 6, issn 0953-8984, 065802.1-065802.6Article
Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon CrystalYAMADA, Takemi; YAMAKAWA, Youichi; ONO, Yoshiaki et al.Journal of the Physical Society of Japan. 2009, Vol 78, Num 5, issn 0031-9015, 054702.1-054702.6Article
Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germaniumAURET, F. D; COELHO, S. M. M; MYBURG, G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4376-4378, issn 0921-4526, 3 p.Conference Paper
Experimental and theoretical study of the thermal solubility of the vacancy in germaniumVANHELLEMONT, J; LAUWAERT, J; WITECKA, A et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4529-4532, issn 0921-4526, 4 p.Conference Paper
Self-interstitials and related defects in irradiated siliconGORELKINSKII, Yu. V; ABDULLIN, Kh. A; MUKASHEV, B. N et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4579-4582, issn 0921-4526, 4 p.Conference Paper
Theoretical models for doping diamond for semiconductor applications : Solar energetics: from photovoltaics to water splittingGOSS, J. P; EYRE, R. J; BRIDDON, P. R et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 9, pp 1679-1700, issn 0370-1972, 22 p.Article
Centers with low correlation energy in deep-level transient spectroscopy studiesYARYKIN, Nikolai.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125031.1-125031.4Article
Isochronal annealing behaviour of defects induced by swift oxygen ions in high-resistivity p-type siliconCHAUDHURI, S. K; GOSWAMI, K; GHUGRE, S. S et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 21, pp 1-9, issn 0953-8984, 9 p.Article
Electrical and optical properties of multivacancy centres in diamondJONES, Robert; HOUNSOME, Luke S; FUJITA, Naomi et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 3059-3064, issn 1862-6300, 6 p.Conference Paper
Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methodsMCHEDLIDZE, T; ARGUIROV, T; JIA, G et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 7, pp 2229-2237, issn 1862-6300, 9 p.Conference Paper
Static and transient electrical properties of (111) diamond p-n diodesTAVARES, C; MURET, P; KOIZUMI, S et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 2985-2990, issn 1862-6300, 6 p.Conference Paper
Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogenFUKATA, N; SATO, S; FUKUDA, S et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 175-178, issn 0921-4526, 4 p.Conference Paper
Strong compensation of n-type Ge via formation of donor-vacancy complexesCOUTINHO, J; JANKE, C; CARVALHO, A et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 179-183, issn 0921-4526, 5 p.Conference Paper
Uniaxial compressive stress induced nuclear quadrupole interaction at the 111Cd nucleus in n-doped siliconTESSEMA, Genene.Physica. B, Condensed matter. 2006, Vol 373, Num 1, pp 28-32, issn 0921-4526, 5 p.Article
High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped siliconAURET, F. D; PEAKER, A. R; MARKEVICH, V. P et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 73-76, issn 0921-4526, 4 p.Conference Paper
Band gap states of interstitial nickel-complexes in diamondLARICO, R; JUSTO, J. F; MACHADO, W. V. M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 292-295, issn 0921-4526, 4 p.Conference Paper
Thermal double donor annihilation and oxygen precipitation at around 650 °C in czochralski-grown Si : local vibrational mode studiesMURIN, L. I; LINDSTRÖM, J. L; MARKEVICH, V. P et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2237-S2246, issn 0953-8984Conference Paper
DLTS Studies of high-temperature electron irradiated Cz n-SiNEIMASH, V; KRAS'KO, M; CLAUWS, P et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 3, pp 509-516, issn 0031-8965, 8 p.Article
Deep level transient spectroscopy of defects in high-energy light-particle irradiated SiAURET, F. Danie; DEENAPANRAY, Prakash N. K.Critical reviews in solid state and materials sciences. 2004, Vol 29, Num 1, pp 1-44, issn 1040-8436, 44 p.Article
The effect of germanium doping on oxygen donors in Czochralski-grown siliconHONG LI; DEREN YANG; XUEGONG YU et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 32, pp 5745-5750, issn 0953-8984, 6 p.Article
Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approachKOILLER, Belita; CAPAZ, R. B; XUEDONG HU et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115207.1-115207.8, issn 1098-0121Article
Donor and acceptor states in diamondGOSS, J. P; BRIDDON, P. R; JONES, R et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 684-690, issn 0925-9635, 7 p.Conference Paper
The muon spin response to intermittent hyperfine interaction: modelling the high-temperature electrical activity of hydrogen in siliconLORD, J. S; COX, S. F. J; CHARLTON, M et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 40, pp S4739-S4760, issn 0953-8984Article
