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Ab initio study of isolated chlorine defects in cubic SiCALFIERI, G; KIMOTO, T.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 41, issn 0953-8984, 415802.1-415082.7Article

Vacancies in CuInSe₂: new insights from hybrid-functional calculationsOIKKONEN, L. E; GANCHENKOVA, M. G; SEITSONEN, A. P et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 42, issn 0953-8984, 422202.1-422202.5Article

Theoretical studies of defect states in GaTeRAK, Zs; MAHANTI, S. D; MANDAL, Krishna C et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 1, issn 0953-8984, 015504.1-015504.9Article

Muonium in boronCOX, S. F. J; LORD, J. S; HILLIER, A. D et al.Physica. B, Condensed matter. 2009, Vol 404, Num 5-7, pp 841-844, issn 0921-4526, 4 p.Conference Paper

Negative muon spin rotation study of acceptor centers in SiCSTOYKOV, A; HERLACH, D; SCHEUERMANN, R et al.Physica. B, Condensed matter. 2009, Vol 404, Num 5-7, pp 824-826, issn 0921-4526, 3 p.Conference Paper

The silicon vacancy in SiCJANZEN, Erik; GALI, Adam; CARLSSON, Patrick et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4354-4358, issn 0921-4526, 5 p.Conference Paper

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Relationship between grain-boundary capacitance and bulk shallow donors in SnO₂ polycrystalline semiconductorBUENO, P. R; SANTOS, M. A; RAMIREZ, M. A et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 7, pp 1694-1698, issn 1862-6300, 5 p.Article

EPR identification of intrinsic defects in SiCISOYA, J; UMEDA, T; MIZUOCHI, N et al.Physica status solidi. B. Basic research. 2008, Vol 245, Num 7, pp 1298-1314, issn 0370-1972, 17 p.Article

Analysis of nonexponential deep-level current transients in schottky diodes fabricated on [1100] 6H-SiCBOLOTNIKOV, A; MUZYKOV, P; SUDARSHAN, T. S et al.Journal of electronic materials. 2006, Vol 35, Num 5, pp 1122-1126, issn 0361-5235, 5 p.Article

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Light-induced neutralization of hydrogen shallow donors in zinc oxideNICKEL, N. H.Physica status solidi. B. Basic research. 2006, Vol 243, Num 8, issn 0370-1972, R51-R53Article

Band gaps and defect levels in functional oxidesROBERTSON, J; XIONG, K; CLARK, S. J et al.Thin solid films. 2006, Vol 496, Num 1, pp 1-7, issn 0040-6090, 7 p.Conference Paper

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiCMATSUURA, Hideharu; KAGAMIHARA, Sou; ITOH, Yuji et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 342-345, issn 0921-4526, 4 p.Conference Paper

Site selected excitation of Sm²⁺ in substitutional disordered crystal KLaF₄ITO, Kiyotaka; YAMAGA, Mitsuo; KODAMA, Nobuhiro et al.Journal of alloys and compounds. 2006, Vol 408-12, pp 766-770, issn 0925-8388, 5 p.Conference Paper

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Transition-metal and hydrogen in ZnO : A source of shallow donorsWARDLE, M. G; GOSS, J. P; BRIDDON, P. R et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 731-734, issn 0921-4526, 4 p.Conference Paper

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