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Fabrication of cobalt silicide nanowire contacts to silicon nanowiresMOHAMMAD, Ahmad M; DEY, Soham; LEW, K.-K et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 9, pp G577-G580, issn 0013-4651Article

Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditionsMARTIN-MARTINEZ, M. J; PEREZ, S; PARDO, D et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 381-385, issn 0921-4526Conference Paper

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Low-field current transport mechanisms in rf magnetron sputter deposited boron carbide (B₅C)/p-type crystalline silicon junctions in the darkABDUL-GADER, M. M; AL-BINNI, U. A; AHMAD, Ahmad A et al.International journal of electronics. 2001, Vol 88, Num 8, pp 873-901, issn 0020-7217Article

Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealingNIRAULA, M; NAKAMURA, A; AOKI, T et al.Journal of electronic materials. 2001, Vol 30, Num 8, pp 911-916, issn 0361-5235Article

Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interfaceHASTAS, N. A; DIMITRIADIS, C. A; LOGOTHETIDIS, S et al.Semiconductor science and technology. 2001, Vol 16, Num 6, pp 474-477, issn 0268-1242Article

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