Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structuresVITUSEVICH, S. A; DANYLYUK, S. V; PETRYCHUK, M. V et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 143-146, issn 0169-4332, 4 p.Conference Paper

Noise properties of ballistic exclusons: dimensionality effectsGOMILA, G; REGGIANI, L.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 141-144, issn 0921-4526Conference Paper

Current noise in thin film Al/Al₂O₃/Au sandwichesOSTADAL, I; LECKO, L; SOBOTIK, P et al.Vacuum. 1998, Vol 50, Num 1-2, pp 9-13, issn 0042-207XConference Paper

Nonequilibrium current noise spectrum in a dissipative conductorUEDA, M; SHIMIZU, A.Journal of the Physical Society of Japan. 1993, Vol 62, Num 9, pp 2994-2998, issn 0031-9015Article

Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devicesLEUNG, B. H; FONG, W. K; SURYA, C et al.Applied surface science. 2003, Vol 212-13, pp 897-900, issn 0169-4332, 4 p.Conference Paper

Information capacity of elements of quantum computers operating with echo-signalsPUSHKINSKY, E. A; ASTROV, M.Physica. B, Condensed matter. 2002, Vol 321, Num 1-4, pp 408-413, issn 0921-4526, 6 p.Conference Paper

Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructuresARDARAVICIUS, L; LIBERIS, J; MATULIONIS, A et al.Materials science forum. 2002, pp 117-120, issn 0255-5476, isbn 0-87849-890-7Conference Paper

Influence of film qualities on noise characteristics of a-Si_1-xC_x:H thin films deposited by PECVDICHIHARA, T; AIZAWA, K.Applied surface science. 1997, Vol 113114, pp 759-763, issn 0169-4332Conference Paper

Spin-dependent current fluctuations in quantum wellsMOLOTKOV, S. N; PARSONS, D.JETP letters. 1993, Vol 58, Num 1, pp 45-48, issn 0021-3640Article

Noise characteristics of ultrasmall resonant-tunneling structuresHUNG, K.-M; WU, G. Y.Physical review. B, Condensed matter. 1993, Vol 48, Num 19, pp 14687-14689, issn 0163-1829Article

Elementary excitations for right and left handed electrical systems: Thermal-fluctuations comparisonPALMA-CHILLA, L; PEREZ PONCE, Alejandro A; FLORES, J. C et al.Physica. B, Condensed matter. 2012, Vol 407, Num 7, pp 1166-1169, issn 0921-4526, 4 p.Article

Solubility of Co clusters in Co-implanted ZnO thin films by 200 MeV Ag¹⁵⁺ ions irradiationWASI KHAN, M; KUMAR, Ravi; MAJEED KHAN, M. A et al.Semiconductor science and technology. 2009, Vol 24, Num 9, issn 0268-1242, 095011.1-095011.6Article

High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctionsHASTAS, N. A; DIMITRIADIS, C. A; PANAYIOTATOS, Y et al.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 662-667, issn 0268-1242Article

High electric field performance of Al_0.3Ga_0.7As/GaAs and Al_0.3Ga_0.7As/GaAs/In_0.3Ga_0.7As quantum well micro-Hall devicesKUNETS, Vasyl P; HOERSTEL, Wolfgang; KOSTIAL, Helmar et al.Sensors and actuators. A, Physical. 2002, Vol 101, Num 1-2, pp 62-68, issn 0924-4247, 7 p.Article

Shot noise suppression due to an anti-dot latticeMACUCCI, M.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 494-498, issn 0921-4526Conference Paper

Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistorsDANELON, V; ANIEL, F; BENCHIMOL, J. L et al.IEEE microwave and guided wave letters. 1999, Vol 9, Num 5, pp 195-197, issn 1051-8207Article

Low-frequency noise in quantum point contactsLIEFRINK, F; DIJKHUIS, J. I; VAN HOUTEN, H et al.Semiconductor science and technology. 1994, Vol 9, Num 12, pp 2178-2189, issn 0268-1242Article

Johnson-Nyquist noise for a 2D electron gas in a narrow channelBULASHENKO, O. M; KOCHELAP, V. A.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 39, pp L469-L474, issn 0953-8984Article

Quantum 1/f noise in epitaxial lateral overgrown GaN: piezoelectric effectSIA, E. K; CHUA, S. J; HARTNAGEL, H. L et al.Semiconductor science and technology. 2002, Vol 17, Num 6, pp 617-620, issn 0268-1242Article

Effects of surface scattering on the thermal-noise properties and AC conductance of whiskersMARGULIS, Vl. A; PITERIMOVA, T. V; GAIDUK, E. A et al.Physica. B, Condensed matter. 2002, Vol 324, Num 1-4, pp 90-101, issn 0921-4526, 12 p.Article

Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBEFONG, W. K; LEUNG, B. H; XIE, J. Q et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 2, pp 466-471, issn 0031-8965Conference Paper

Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si_1-xGe_x heterostructuresMARTIN, M. J; PARDO, D; VELAZQUEZ, J. E et al.Semiconductor science and technology. 2000, Vol 15, Num 3, pp 277-285, issn 0268-1242Article

Structural and trap properties of polycrystalline semiconducting FeSi₂ thin filmsTASSIS, D. H; DIMITRIADIS, C. A; POLYCHRONIADIS, E. K et al.Semiconductor science and technology. 1999, Vol 14, Num 11, pp 967-974, issn 0268-1242Article

Quantum shot noiseREZNIKOV, M; DE PICCIOTTO, R; HEIBLUM, M et al.Superlattices and microstructures. 1998, Vol 23, Num 3-4, pp 901-915, issn 0749-6036Article

Dependence of the conductivity noise of metallic oxide interconnects on the oxygen stoichiometry : a study of LaNiO_3-δGHOSH, A; RAYCHAUDHURI, A. K; SREEKALA, R et al.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 24, pp L75-L79, issn 0022-3727Article