Fabrication and electrical characterization of thermally deposited amorphous Se_0.82In_0.18 on n-Si (100)KOTKATA, M. F; MANSOUR, S. A.Applied physics. A, Materials science & processing (Print). 2012, Vol 107, Num 4, pp 1003-1009, issn 0947-8396, 7 p.Article

Improvement of the electrical properties of Se₃Te₁ thin films by In additionsALY, K. A; ABD ELNAEIM, A. M; AFIFY, N et al.Journal of non-crystalline solids. 2012, Vol 358, Num 20, pp 2759-2763, issn 0022-3093, 5 p.Article

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO₂ at room temperatureGUOYIN XIA; ZHONGYUAN MA; XIAOFAN JIANG et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2348-2352, issn 0022-3093, 5 p.Conference Paper

Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protonsSATO, Shin-Ichiro; SAI, Hitoshi; OHSHIMA, Takeshi et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2039-2043, issn 0022-3093, 5 p.Conference Paper

Bipolar resistance switching in chalcogenide materialsPRADEL, Annie; FROLET, Nathalie; RAMONDA, Michel et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 10, pp 2303-2308, issn 1862-6300, 6 p.Article

Dependence of activation energy and pre-exponential factor on electric field in amorphous thin films of Se₇₀Te₃₀-_xZn_xYADAV, S; SHARMA, S. K; KUMAR, A et al.Journal of alloys and compounds. 2011, Vol 509, Num 1, pp 6-9, issn 0925-8388, 4 p.Article

Electrical properties of As_xSe_1-x (x≤0.05) Mott-barriersBHARATHAN, P; BANDYOPADHYAY, S; ESPINASSE, M et al.Journal of non-crystalline solids. 2011, Vol 357, Num 18, pp 3366-3372, issn 0022-3093, 7 p.Article

Electrosynthesis and characterization of [Cu(Taab)(H₂O)_2](L)₂ non-crystalline thin filmsSANCHEZ-VERGARA, M. E; MORALES-SAAVEDRA, O. G; RODRIGUEZ-ROSALES, A. A et al.Journal of non-crystalline solids. 2011, Vol 357, Num 15, pp 2780-2786, issn 0022-3093, 7 p.Article

Thin tantalum films on crystalline silicon - a metallic glassSTELLA, Kevin; BÜRSTEL, Damian; HASSELBRINK, Eckart et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 2, pp 68-70, issn 1862-6254, 3 p.Article

Negative magnetoresistance in Cr-containing diamond-like carbon-based heterostructuresCOLON SANTANA, Juan A; SINGH, V; PALSHIN, V et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 98, Num 4, pp 811-819, issn 0947-8396, 9 p.Article

TSC measurements in a-Ge₂₂Se_78-xBi_x thin filmsYADAV, S; KUMAR, D; PAL, R. K et al.Physica. B, Condensed matter. 2010, Vol 405, Num 24, pp 4982-4985, issn 0921-4526, 4 p.Article

Effect of Ag incorporation on electrical and optical properties of Se-S chalcogenide thin filmsKHAN, Shamshad A; AL-HAZMI, F. S; AL-SANOSI, Ali M et al.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1415-1419, issn 0921-4526, 5 p.Article

Effect of Bi incorporation on defect state density in a-Se_85―xTe₁₅Bi_x thin filmsSHARMA, Ambika; BARMAN, P. B.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1591-1594, issn 0921-4526, 4 p.Article

Effect of Sn addition on the photoconductivity of narrow-gap Sb₂Se₃ filmsKUMAR, P; THANGARAJ, R.Philosophical magazine letters. 2009, Vol 89, Num 4, pp 241-249, issn 0950-0839, 9 p.Article

Modelling thermally-stimulated currents in disordered semiconductors : Amorphous semiconductors and phase-change materialsMAIN, Charles.Physica status solidi. B. Basic research. 2009, Vol 246, Num 8, pp 1845-1848, issn 0370-1972, 4 p.Article

Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride filmsALIBART, F; DURAND DROUHIN, O; DEBIEMME-CHOUVY, C et al.Solid state communications. 2008, Vol 145, Num 7-8, pp 392-396, issn 0038-1098, 5 p.Article

Switching phenomenon and optical properties of Se₈₅Te₁₀Bi₅ filmsATYIA, H. E; BEKHEET, A. E.Physica. B, Condensed matter. 2008, Vol 403, Num 18, pp 3130-3136, issn 0921-4526, 7 p.Article

Structural change of laser-irradiated Ge₂Sb₂Te₅ films studied by electrical property measurementSUN HUAJUN; HOU LISONG; WU YIQUN et al.Journal of non-crystalline solids. 2008, Vol 354, Num 52-54, pp 5563-5566, issn 0022-3093, 4 p.Article

Electronic transport properties and Microstructures of TiO₂:Co magnetic semiconductorsSONG, Hong-Qiang; YONG WANG; YAN, Shi-Shen et al.Journal of magnetism and magnetic materials. 2007, Vol 312, Num 1, pp 53-57, issn 0304-8853, 5 p.Article

Characterization of pure ZnO thin films prepared by a direct photochemical methodBUONO-CORE, G. E; CABELLO, G; KLAHN, A. H et al.Journal of non-crystalline solids. 2006, Vol 352, Num 38-39, pp 4088-4092, issn 0022-3093, 5 p.Article

Effect of Tl addition on the electrical properties of amorphous As₂₀Se_80-xTl_x filmsDONGOL, M; EL-NAHASS, M. M; ABOU-ZIED, M et al.Physica. B, Condensed matter. 2006, Vol 371, Num 2, pp 218-222, issn 0921-4526, 5 p.Article

Space charge limited conduction in a-(Ge₂₀Se₈₀)_1-xSn_x thin filmsSINGH, R; TRIPATHI, S. K; KUMAR, S et al.Journal of non-crystalline solids. 2006, Vol 352, Num 30-31, pp 3230-3235, issn 0022-3093, 6 p.Article

Ionic amorphous oxide semiconductors : Material design, carrier transport, and device applicationHOSONO, Hideo.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 851-858, issn 0022-3093, 8 p.Conference Paper

Some properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH₄ mixturesNAMITA DUTTA GUPTA; LONGEAUD, C; CHAUDHURI, P et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1307-1309, issn 0022-3093, 3 p.Conference Paper

Electronic conduction in 40 MeV ²⁸Si⁵⁺ ion irradiated Se-Te-Pb thin filmsMANINDER SINGH KAMBOJ; THANGARAJ, R; AVASTHI, D. K et al.EPJ. Applied physics (Print). 2005, Vol 31, Num 1, pp 23-25, issn 1286-0042, 3 p.Article