Influence of sintering temperature on screen printed Cu₂ZnSnS₄ (CZTS) filmsYU WANG; YANHUA HUANG; LEE, Alex Y. S et al.Journal of alloys and compounds. 2012, Vol 539, pp 237-241, issn 0925-8388, 5 p.Article

Ferrimagnetic ZnFe₂O₄ thin films on SrTiO₃ single crystals with highly tunable electrical conductivityLORENZ, Michael; BRANDT, Matthias; MEXNER, Katja et al.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 12, pp 438-440, issn 1862-6254, 3 p.Article

Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam SputteringSHEN, Jung-Hsiung; YEH, Sung-Wei; DERSHIN GAN et al.Journal of electronic materials. 2010, Vol 39, Num 10, pp 2352-2358, issn 0361-5235, 7 p.Article

Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputteringFAN, J. C; DING, G. W; FUNG, S et al.Semiconductor science and technology. 2010, Vol 25, Num 8, issn 0268-1242, 085009.1-085009.5Article

Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped TiO₂ filmsALI, Bakhtyar; RUMAIZ, Abdul K; OZBAY, Arif et al.Solid state communications. 2009, Vol 149, Num 47-48, pp 2210-2214, issn 0038-1098, 5 p.Article

Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of thin films of lead saltsKUMAR, Sushil; LAL, Bhajan; AGHAMKAR, P et al.Journal of alloys and compounds. 2009, Vol 488, Num 1, pp 334-338, issn 0925-8388, 5 p.Article

Effects of post-annealing on (₁₁₀) applications and materials science Cu₂O epitaxial films and origin of low mobility in Cu₂O thin-film transistorMATSUZAKI, Kosuke; NOMURA, Kenji; YANAGI, Hiroshi et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 9, pp 2192-2197, issn 1862-6300, 6 p.Conference Paper

Electrical, structural and optical applicate characterization of copper oxide thin films as a function of post annealing temperatureFIGUEIREDO, V; ELANGOVAN, E; GONCALVES, G et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 9, pp 2143-2148, issn 1862-6300, 6 p.Conference Paper

Effect of precursor concentration on the properties of ITO thin filmsMOHOLKAR, A. V; PAWAR, S. M; RAJPURE, K. Y et al.Journal of alloys and compounds. 2008, Vol 464, Num 1-2, pp 387-392, issn 0925-8388, 6 p.Article

Effects of SRO Buffer Layer on Multiferroic BiFeO₃ Thin FilmsZHENG, R. Y; SIM, C. H; WANG, J et al.Journal of the American Ceramic Society. 2008, Vol 91, Num 10, pp 3240-3244, issn 0002-7820, 5 p.Article

Influence of oxygen partial pressure on the properties of undoped InO_x films deposited at room temperature by rf-PERTENUNES DE CARVALHO, C; LAVAREDA, G; PARREIRA, P et al.Journal of non-crystalline solids. 2008, Vol 354, Num 15-16, pp 1643-1647, issn 0022-3093, 5 p.Article

Magnetic and Electrical Properties of (Mn, La)-Codoped SrTiO₃Thin FilmsZHANG, Song-Yin; LIN, Yuan-Hua; NAN, Ce-Wen et al.Journal of the American Ceramic Society. 2008, Vol 91, Num 10, pp 3263-3266, issn 0002-7820, 4 p.Article

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristicsCHAUHAN, A. K; ASWAL, D. K; KOIRY, S. P et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 90, Num 3, pp 581-589, issn 0947-8396, 9 p.Article

Synthesis and characterization of tin sulphide thin films grown by chemical bath deposition techniqueHANKARE, P. P; JADHAV, A. V; CHATE, P. A et al.Journal of alloys and compounds. 2008, Vol 463, Num 1-2, pp 581-584, issn 0925-8388, 4 p.Article

Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum levelSATHIARAJ, T. S.Microelectronics journal. 2008, Vol 39, Num 12, pp 1444-1451, issn 0959-8324, 8 p.Article

Structure, magnetic and transport properties of Mn_xGe_1-x filmsSHUANG QIAO; DENGLU HOU; YANYAN WEI et al.Physica. B, Condensed matter. 2008, Vol 403, Num 21-22, pp 3916-3920, issn 0921-4526, 5 p.Article

The effect of nitrogen on the cycling performance in thin-film Si_1-xN_x anodeAHN, Donggi; KIM, Chunjoong; LEE, Joon-Gon et al.Journal of solid state chemistry (Print). 2008, Vol 181, Num 9, pp 2139-2142, issn 0022-4596, 4 p.Article

Growth of the magnetic semiconductor Fe_2-xTi_xO_3±δ thin films by pulsed laser depositionPOPOVA, E; NDILIMABAKA, H; WAROT-FONROSE, B et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 93, Num 3, pp 669-674, issn 0947-8396, 6 p.Article

Electrical conductivity and photoconductivity studies of TiO₂sol-gel thin films and the effect of N-dopingPOMONI, K; VOMVAS, A; TRAPALIS, Chr et al.Journal of non-crystalline solids. 2008, Vol 354, Num 35-39, pp 4448-4457, issn 0022-3093, 10 p.Conference Paper

Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin filmsLEE, Chongmu; LEE, Wangwoo; KIM, Hojin et al.Ceramics international. 2008, Vol 34, Num 4, pp 1089-1092, issn 0272-8842, 4 p.Conference Paper

Effects of residual stress on the electrical properties of PZT filmsLEE, Jae-Wung; PARK, Chee-Sung; KIM, Miyoung et al.Journal of the American Ceramic Society. 2007, Vol 90, Num 4, pp 1077-1080, issn 0002-7820, 4 p.Article

Properties of amorphous carbon nitride prepared by RF reactive sputteringGHARBI, R; KAROUI, M. B; FATHALLAH, M et al.Philosophical magazine (2003. Print). 2007, Vol 87, Num 31-33, pp 5079-5088, issn 1478-6435, 10 p.Article

EXAFS investigation on Sb incorporation effects to electrical transport in SnO₂ thin films deposited by sol-gelGERALDO, V; BRIOIS, V; SCALVI, L. V. A et al.Journal of the European Ceramic Society. 2007, Vol 27, Num 13-15, pp 4265-4268, issn 0955-2219, 4 p.Conference Paper

Electrical conductivity of thin film ceria grown by pulsed laser depositionJONG HOON JOO; GYEONG MAN CHOI.Journal of the European Ceramic Society. 2007, Vol 27, Num 13-15, pp 4273-4277, issn 0955-2219, 5 p.Conference Paper

Study of transport properties of Ge_50-xSb_yTe_100+x-y thin film alloyBAHGAT, A. A; MAHMOUD, E. A; ABD RABO, A. S et al.Journal of materials science. 2006, Vol 41, Num 11, pp 3451-3458, issn 0022-2461, 8 p.Article