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Surface phonon polariton characteristics of bulk wurtzite ZnO crystalLEE, S. C; NG, S. S; SAW, K. G et al.Physica. B, Condensed matter. 2011, Vol 406, Num 1, pp 115-118, issn 0921-4526, 4 p.Article
Small-Angle Oblique-Incidence Infrared Reflection in Polar Materials: I. Model ApproachKURODA, Noritaka; TABATA, Yoshinori.Journal of the Physical Society of Japan. 2010, Vol 79, Num 2, issn 0031-9015, 024710.1-024710.7Article
Analysis of Raman scattering of Ga1―xMnxAs dilute magnetic semiconductorYOON, I. T; KANG, T. W.Journal of magnetism and magnetic materials. 2009, Vol 321, Num 14, pp 2257-2259, issn 0304-8853, 3 p.Article
Studies on Raman scattering and Te precipitates in cadmium manganese tellurideLUAN, Li-Jun; JIE, Wan-Qi; ZHANG, Ji-Jun et al.Journal of alloys and compounds. 2009, Vol 477, Num 1-2, pp 399-402, issn 0925-8388, 4 p.Article
The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopyOLVERA-CERVANTES, J; PLAZA, J. L; DIEGUEZ, E et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035007.1-035007.5Article
Lattice Dynamics of ZnSexS1-x Semiconductor CrystalsVINOGRADOV, E. A; MAVRIN, B. N; NOVIKOVA, N. N et al.Laser physics. 2009, Vol 19, Num 2, pp 162-170, issn 1054-660X, 9 p.Conference Paper
Evolution of InP surfaces under low fluence pulsed UV irradiationMUSAEV, O. R; KWON, O. S; WROBEL, J. M et al.Applied surface science. 2008, Vol 254, Num 18, pp 5803-5806, issn 0169-4332, 4 p.Article
Synthesis of GaN nanowires by Tb catalysisJINHUA CHEN; CHENGSHAN XUE; HUIZHAO ZHUANG et al.Applied surface science. 2008, Vol 254, Num 15, pp 4716-4719, issn 0169-4332, 4 p.Article
Far infrared properties of PbTe doped with BismuthNIKOLIC, P. M; PARASKEVOPOULOS, K. M; VUJATOVIC, S. S et al.Journal of materials science. 2008, Vol 43, Num 16, pp 5516-5520, issn 0022-2461, 5 p.Article
Probe into the reflection from GaP nanoparticles via different solutions of radiative transfer equationZHANG, Q; ZHANG, Z; ZHOU, Z et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 93, Num 2-3, pp 589-593, issn 0946-2171, 5 p.Article
Band gap energy determination by photoacoustic absorption and optical analysis of Cd1-xZnxTe for low zinc concentrationsPRIAS-BARRAGAN, J. J; TIRADE-MEJIA, L; ARIZA-CALDERON, H et al.Journal of crystal growth. 2006, Vol 286, Num 2, pp 279-283, issn 0022-0248, 5 p.Article
Local vibrational modes of hydrogen in GaN : Observation and theoryPEREIRA, R. N; BECH NIELSEN, B; STAVOLA, M et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 464-467, issn 0921-4526, 4 p.Conference Paper
Nitrogen-related defects in GaP and GaAsULRICI, W; CLERJAUD, B.Physica. B, Condensed matter. 2006, Vol 376-77, pp 560-563, issn 0921-4526, 4 p.Conference Paper
Temperature dependence of Raman scattering of ZnSe nanoparticle grown through vapor phaseGUOWEI LU; HUIZI AN; YU CHEN et al.Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 530-535, issn 0022-0248, 6 p.Article
Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al dopingMAEDA, Yoshihito; TERAI, Yoshikazu; ITAKURA, Masaru et al.Optical materials (Amsterdam). 2005, Vol 27, Num 5, pp 920-924, issn 0925-3467, 5 p.Conference Paper
Infrared transmission spectra of Cd1-xZnxTe (x = 0.04) crystalsLI YUJIE; GU ZHI; LI GUOQIANG et al.Journal of electronic materials. 2004, Vol 33, Num 8, pp 861-866, issn 0361-5235, 6 p.Article
Preparation and characterizations of bulk GaN crystalsSONG, Y. T; CHEN, X. L; WANG, W. J et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 327-330, issn 0022-0248, 4 p.Article
Absorption and Raman scattering processes in InN films and dotsBRIOT, O; MALEYRE, B; RUFFENACH, S et al.Journal of crystal growth. 2004, Vol 269, Num 1, pp 22-28, issn 0022-0248, 7 p.Conference Paper
Structural and optical characterization of undoped and indium-doped CdS films grown by pulsed laser depositionPERNA, G; CAPOZZI, V; AMBRICO, M et al.Thin solid films. 2004, Vol 453-54, pp 187-194, issn 0040-6090, 8 p.Conference Paper
Study of indium phosphide wafers treated by long time annealing at high temperaturesZDANSKY, K; PEKAREK, L; HLIDEK, P et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 197-200, issn 1286-0042, 4 p.Conference Paper
Anisotropy and strain effects on lattice dynamics in nitride-based superlatticesGLEIZE, J; FRANDON, J; RENUCCI, M. A et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 3, pp 605-611, issn 0031-8965, 7 p.Article
Resonance Raman spectroscopy of Ga1-xAlxAs mediated via compositional variationLOCKWOOD, D. J; WASILEWSKI, Z. R.Solid state communications. 2003, Vol 126, Num 5, pp 261-264, issn 0038-1098, 4 p.Article
Structural, optical and Raman scattering studies on polycrystalline Cd0.8Zn0.2Te thin films prepared by vacuum evaporationPRABAKAR, K; NARAYANDASS, Sa. K; MANGALARAJ, D et al.Physica. B, Condensed matter. 2003, Vol 328, Num 3-4, pp 355-362, issn 0921-4526, 8 p.Article
Absorption spectrum of ZnO precipitates in ZnSeMOROZOVA, N. K; PLOTNICHENKO, V. G; GAVRISHCHUK, E. M et al.Inorganic materials. 2003, Vol 39, Num 8, pp 783-787, issn 0020-1685, 5 p.Article
Corrosion resistance of aluminum nitride as semiconductor equipment parts studied by micro-Raman spectroscopyFUJIMORI, Hirotaka; TAMURA, Yoji; HARITA, Akira et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2003, Vol 111, Num 12, pp 935-938, issn 0914-5400, 4 p.Article