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Optical properties of N and transition metal R (R=V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) codoped anatase TiO2RENHUI ZHANG; QING WANG; JUN LIANG et al.Physica. B, Condensed matter. 2012, Vol 407, Num 14, pp 2709-2715, issn 0921-4526, 7 p.Article
Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometryBAKALOVA, S; GONG, Y; COBET, C et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 39, issn 0953-8984, 395801.1-395801.5Article
Micro-ablation on silicon by femtosecond laser pulses focused with an axicon assisted with a lensINOUE, R; TAKAKUSAKI, K; TAKAGI, Y et al.Applied surface science. 2010, Vol 257, Num 2, pp 476-480, issn 0169-4332, 5 p.Article
Synthesis, crystal structure, and optical properties of a novel pentaborate, K2NaZnB5O10XUEAN CHEN; CHUNYAN YANG; XINAN CHANG et al.Journal of alloys and compounds. 2010, Vol 492, Num 1-2, pp 543-547, issn 0925-8388, 5 p.Article
Temperature dependence of optical absorption for the visible region in transparent conducting oxidesGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.Optik (Stuttgart). 2009, Vol 120, Num 2, pp 97-98, issn 0030-4026, 2 p.Article
Visible-light photocatalytic activity of nitrogen-doped TiO2 thin film prepared by pulsed laser depositionLEI ZHAO; QING JIANG; JIANSHE LIAN et al.Applied surface science. 2008, Vol 254, Num 15, pp 4620-4625, issn 0169-4332, 6 p.Article
High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in AlxGa1-xN/GaN heterostructuresTAKEUCHI, H; YAMAMOTO, Y; KAMO, Y et al.EPJ. Applied physics (Print). 2007, Vol 37, Num 2, pp 119-122, issn 1286-0042, 4 p.Article
Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mappingKÜNECKE, U; WELLMANN, P. J.EPJ. Applied physics (Print). 2006, Vol 34, Num 3, pp 209-213, issn 1286-0042, 5 p.Article
Nonparabolicity and excitons in optical absorption of InNBECHSTEDT, F; FURTHMÜLLER, J; HAHN, P. H et al.Journal of crystal growth. 2006, Vol 288, Num 2, pp 294-297, issn 0022-0248, 4 p.Conference Paper
Strain relaxation by stripe patterning in Si/Si1-xGex/Si(100) heterostructuresUHM, Jangwoong; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2006, Vol 508, Num 1-2, pp 239-242, issn 0040-6090, 4 p.Conference Paper
Effect of N2 gas annealing and SiO2 barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO2 conducting filmLIM, Tae-Young; KIM, Chang-Yeoul; KIM, Bum-Suk et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 2, pp 71-76, issn 0957-4522, 6 p.Article
Optical anisotropy of wurtzite GaN on sapphire characterized by spectroscopic ellipsometryLIAN, C. X; LI, X. Y; LIU, J et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 417-420, issn 0268-1242, 4 p.Article
Morphology and optical properties of amorphous ZnS films deposited by ultrasonic-assisted successive ionic layer adsorption and reaction methodGAO, X. D; LI, X. M; YU, W. D et al.Thin solid films. 2004, Vol 468, Num 1-2, pp 43-47, issn 0040-6090, 5 p.Article
Application of photoreflectance spectroscopy to optoelectronic materials and devicesLONG, L; SCHREIBER, J.Thin solid films. 2004, Vol 450, Num 1, pp 60-65, issn 0040-6090, 6 p.Conference Paper
Optical characterization of aluminum-doped zinc oxide films by advanced dispersion theoriesPFLUG, Andreas; SITTINGER, Volker; RUSKE, Florian et al.Thin solid films. 2004, Vol 455-56, pp 201-206, issn 0040-6090, 6 p.Conference Paper
Absorption and photoluminescence features caused by defects in InNALEXANDROV, Dimiter; BUTCHER, K. Scott A; WINTREBERT-FOUQUET, Marie et al.Journal of crystal growth. 2004, Vol 269, Num 1, pp 77-86, issn 0022-0248, 10 p.Conference Paper
InN grown by remote plasma-enhanced chemical vapor depositionWINTREBERT-FOUQUET, M; BUTCHER, K. Scott A; CHEN, P. P.-T et al.Journal of crystal growth. 2004, Vol 269, Num 1, pp 134-138, issn 0022-0248, 5 p.Conference Paper
n-ZnO/p-Si UV photodetectors employing AlOx films for antireflectionJEONG, I.-S; KIM, J. H; PARK, Hyung-Ho et al.Thin solid films. 2004, Vol 447-48, pp 111-114, issn 0040-6090, 4 p.Conference Paper
Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel methodSARDAR, Kripasindhu; RAJU, A. R; SUBBANNA, G. N et al.Solid state communications. 2003, Vol 125, Num 6, pp 355-358, issn 0038-1098, 4 p.Article
Impurity optical absorption of Co2+-doped BaGa2S4, BaGa2Se4, BaIn2S4, and BaIn2Se4 single crystalsKIM, Mi-Yang; KIM, Wha-Tek; JIN, Moon-Seog et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 4, pp 625-629, issn 0022-3697, 5 p.Article
Quantitative spectroscopy of substitutional nitrogen in GaAs1-xNx epitaxial layers by local vibrational mode absorptionALT, Hans Christian; GOMENIUK, Yuri; EBBINGHAUS, Gerhard et al.Semiconductor science and technology. 2003, Vol 18, Num 4, pp 303-306, issn 0268-1242, 4 p.Article
Resonant photoionization absorption spectra of spherical quantum dotsBONDARENKO, Victor; YANG ZHAO.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 9, pp 1377-1385, issn 0953-8984, 9 p.Article
Optical studies of the Holmium-doped InGaAsP epilayersLEE, Y. C; SHU, G. W; CHENG, I. M et al.Physica status solidi. A. Applied research. 2003, Vol 200, Num 2, pp 439-445, issn 0031-8965, 7 p.Article
Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputteringCHIN HOCK ONG; HAO GONG.Thin solid films. 2003, Vol 445, Num 2, pp 299-303, issn 0040-6090, 5 p.Conference Paper
Graphite/hydrogen reduction route to Ga2O3 nanobeltsJUN ZHANG; LIDE ZHANG.Solid state communications. 2002, Vol 122, Num 9, pp 493-496, issn 0038-1098Article
