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Tunable photoluminescence of porous silicon by liquid crystal infiltrationMA, Qing-Lan; RUI XIONG; YUAN MING HUANG et al.Journal of luminescence. 2011, Vol 131, Num 10, pp 2053-2057, issn 0022-2313, 5 p.Article

Design and characterization of silicon nanocrystal microgear resonatorsREDDING, Brandon; SHOUYUAN SHI; CREAZZO, Tim et al.Photonics and nanostructures (Print). 2010, Vol 8, Num 3, pp 177-182, issn 1569-4410, 6 p.Article

Luminescence-lifetime mapping in diamondLIAUGAUDAS, Gediminas; COLLINS, Alan T; SUHLING, Klaus et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 36, issn 0953-8984, 364210.1-364210.7Article

Enhancing the mechanical properties of single-crystal CVD diamondQI LIANG; YAN, Chih-Shiue; YUFEI MENG et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 36, issn 0953-8984, 364215.1-364215.6Article

Laser on porous silicon after oxidation by irradiation and annealingHUANG, Wei-Qi; ZHANG, Rong-Tao; WANG, Hai-Xu et al.Optics communications. 2008, Vol 281, Num 20, pp 5229-5233, issn 0030-4018, 5 p.Article

Hexagonal mesoporous germaniumARMATAS, Gerasimos S; KANATZIDIS, Mercouri G.Science (Washington, D.C.). 2006, Vol 313, Num 5788, pp 817-820, issn 0036-8075, 4 p.Article

Erbium-doped silicon nanocrystals grown by r.f. sputtering method : Competition between oxygen and silicon to get erbiumCERQUEIRA, M. F; STEPIKHOVA, M; LOSURDO, M et al.Optical materials (Amsterdam). 2006, Vol 28, Num 6-7, pp 836-841, issn 0925-3467, 6 p.Conference Paper

Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-SiCIOSEK, Jerzy; MISIUK, Andrzej; SURMA, Barbara et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 9, pp 2254-2259, issn 1862-6300, 6 p.Conference Paper

Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructuresTETELBAUM, D. I; GORSHKOV, O. N; FINSTAD, T. G et al.Thin solid films. 2006, Vol 515, Num 1, pp 333-337, issn 0040-6090, 5 p.Conference Paper

Gold nanoparticles quench fluorescence by phase induced radiative rate suppressionDULKEITH, E; RINGLER, M; KLAR, T. A et al.Nano letters (Print). 2005, Vol 5, Num 4, pp 585-589, issn 1530-6984, 5 p.Article

Homoepitaxial deposition of high-quality thick diamond films : effect of growth parametersTALLAIRE, A; ACHARD, J; SILVA, F et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 249-254, issn 0925-9635, 6 p.Conference Paper

Optical properties of boron-doped Si nanowiresZENG, X. B; LIAO, X. B; WANG, B et al.Journal of crystal growth. 2004, Vol 265, Num 1-2, pp 94-98, issn 0022-0248, 5 p.Article

Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrateLI, C. B; CHENG, B. W; MAO, R. W et al.Thin solid films. 2004, Vol 467, Num 1-2, pp 197-200, issn 0040-6090, 4 p.Article

Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decorationLEONI, E; BINETTI, S; PIHAUD, B et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 123-127, issn 1286-0042, 5 p.Conference Paper

Study of CNT synthesis mechanism by in-situ spectroscopyHSIEH, Yun-Shuo; CHEN, Yi-Chun; CHENG, Hsiu-Fung et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 999-1003, issn 0925-9635, 5 p.Conference Paper

Solution synthesis of alkyl- and alky/alkoxy-capped silicon nanoparticles via oxidation of Mg₂SiPETTIGREW, Katherine A; QI LIU; POWER, Philip P et al.Chemistry of materials. 2003, Vol 15, Num 21, pp 4005-4011, issn 0897-4756, 7 p.Article

Optical high excitation of diamond: phase diagram of excitons, electron-hole liquid and electron-hole plasmaTEOFILOV, N; SCHLIESING, R; THONKE, K et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 636-641, issn 0925-9635, 6 p.Conference Paper

CVD diamond films: A Raman and photoluminescence studyDONATO, M. G; FAGGIO, G; MARINELLI, M et al.Thin solid films : application, preparation and characterization. 2003, pp 1-16, isbn 81-7736-133-3, 16 p.Book Chapter

Superlattices of self-assembled Ge/Si(0 0 1) quantum dotsVINH LE THANH; YAM, V.Applied surface science. 2003, Vol 212-13, pp 296-304, issn 0169-4332, 9 p.Conference Paper

Comment on: Evidence for a Fe-related defect centre in diamond by Iakoubovskii K. et alIAKOUBOVSKII, Konstantin; ADRIAENSSENS, Guy J.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 21, pp 5459-5460, issn 0953-8984Article

Comparative investigation of photoluminescence of silicon wire structures and silicon oxide filmsTORCHYNSKA, T; AGUILAR-HERNANDEZ, J; JEDRZEJEWSKI, J et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 4, pp 561-568, issn 0022-3697Article

Raman and electron paramagnetic resonance studies of spark-processed Si and GeCHANG, Sung-Sik; BOWMAKER, G. A.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 3, pp 290-294, issn 0921-5107Article

Variation of spark-processing parameters on the photoluminescence properties of spark-processed siliconSTORA, M. E; HUMMEL, R. E.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 9, pp 1655-1668, issn 0022-3697Article

Photoluminescence decay-dynamics of Si nanoparticles prepared by pulsed laser ablationWATANABE, Kei; SAWADA, Kouichi; KOSHIBA, Masaaki et al.Applied surface science. 2002, Vol 197-98, pp 635-638, issn 0169-4332, 4 p.Conference Paper