Realization and characterization of thin single crystal Ge films on sapphireBOGUMILOWICZ, Y; ABBADIE, A; DROUIN, A et al.Semiconductor science and technology. 2013, Vol 28, Num 3, issn 0268-1242, 035013.1-035013.8Article

Physical characterization of Ge films on polyethylene obtained by pulsed laser depositionGIUFFRIDA, L; TORRISI, L; ROSINSKI, M et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 107, Num 2, pp 469-475, issn 0947-8396, 7 p.Article

Microstructure of hydrogenated silicon carbide thin films prepared by chemical vapour deposition techniquesKÖHLER, F; CHEN, T; NUYS, M et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2011-2014, issn 0022-3093, 4 p.Conference Paper

Investigations of the optical absorption spectra of porous silicon layers on the Silicon backing by the nondestructive photoacoustic methodMALINSKI, Mirosław; CHROBAK, Lukasz; BYCHTO, Leszek et al.Thin solid films. 2010, Vol 519, Num 1, pp 394-398, issn 0040-6090, 5 p.Article

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layerSHEGAI, O. A; MASHANOV, V. I; NIKIFOROV, A. I et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2518-2520, issn 1386-9477, 3 p.Conference Paper

Development of polycrystalline silicon films on flexible metallic substrates by aluminium induced crystallizationPRATHAP, P; SLAOUI, A; DUCROS, C et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 97, Num 1, pp 45-54, issn 0947-8396, 10 p.Article

Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser depositionDAS, A. K; MISRA, P; KUKREJA, L. M et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 16, issn 0022-3727, 165405.1-165405.7Article

Phosphorus incorporation and activity applications ant in (100)-oriented homoepitaxial diamond layersFRANGIEH, G; PINAULT, M.-A; BARJON, J et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 9, pp 2000-2003, issn 1862-6300, 4 p.Conference Paper

A simple quality factor for characterization of thin silicon filmsKOCKA, J; MATES, T; LEDINSKY, M et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2227-2230, issn 0022-3093, 4 p.Conference Paper

Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Si heterojunction solar cell applicationsLIEN, Shui-Yang; WUU, Dong-Sing; WU, Bing-Rui et al.Thin solid films. 2008, Vol 516, Num 5, pp 765-769, issn 0040-6090, 5 p.Conference Paper

Tailoring silicon radiative propertiesLAROCHE, M; MARQUIER, F; CARMINATI, R et al.Optics communications. 2005, Vol 250, Num 4-6, pp 316-320, issn 0030-4018, 5 p.Article

The temperature-dependent spectral properties of filter substrate materials in the far-infrared (6-40 μm)HAWKINS, Gary; HUNNEMAN, Roger.Infrared physics & technology. 2004, Vol 45, Num 1, pp 69-79, issn 1350-4495, 11 p.Article

Luminescence and EPR studies of defects in Si-SiO₂ filmsBARAN, M; BULAKH, B; KORSUNSKA, N et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 285-287, issn 1286-0042, 3 p.Conference Paper

Opto-electronic properties of an Au/CdTe deviceMATHEW, Xavier.Semiconductor science and technology. 2003, Vol 18, Num 1, pp 1-6, issn 0268-1242, 6 p.Article

The origin of the 0.78 eV luminescence band in dislocated siliconKENYON, A. J; STEINMAN, E. A; PITT, C. W et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 39, pp S2843-S2850, issn 0953-8984Conference Paper

Effect of the nature of the hydrogen bonding on the light-induced metastable defects in hydrogenated amorphous silicon prepared by radiofrequency magnetron sputteringDAOUAHI, M; BEN OTHMAN, A; ZELLAMA, K et al.Physica status solidi. B. Basic research. 2002, Vol 231, Num 2, pp 373-384, issn 0370-1972Article

Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga_1-xAl_xAs multiple quantum wells: well-width dependenceCELIK, H; CANKURTARAN, M; BALKAN, N et al.Semiconductor science and technology. 2002, Vol 17, Num 1, pp 18-29, issn 0268-1242Article

Effects of Ar gas dilution in methane plasma on the properties of diamond-like carbon filmsCHAKRABARTI, K; KIM, J. B; WILSON, J. I. B et al.Physica status solidi. A. Applied research. 2002, Vol 194, Num 1, pp 112-117, issn 0031-8965, 6 p.Article

Optical properties of intrinsic and doped a-Si:H films grown by d.c. magnetron sputter depositionRANTZER, A; ARWIN, H; BIRCH, J et al.Thin solid films. 2001, Vol 394, Num 1-2, pp 256-263, issn 0040-6090Article

Photoluminescence, fourier IR transmission, deep level transient spectroscopy studies of diamond layers grown by Hot-filament CVDFABISIAK, Kazimierz; BANASZAK, Agnieszka; LUKASIAK, Zbigniew et al.SPIE proceedings series. 2001, pp 192-197, isbn 0-8194-4116-3Conference Paper

Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor depositionWATANABE, T; SAMESHIMA, T; NAKAHATA, K et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 248-250, issn 0040-6090Conference Paper

Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ionsFORCALES, M; KLIK, M; VINH, N. Q et al.Journal of luminescence. 2001, Vol 94-95, pp 243-248, issn 0022-2313Conference Paper

Sum rules in surface reflectivity : the case of Ge(111)-(2 x 1) and Si(111)-(2 × 1)CHIAROTTI, G; CHIARADIA, P; FAIELLA, E et al.Surface science. 2000, Vol 453, Num 1-3, pp 112-118, issn 0039-6028Article

Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrateSI, J.-J; GUO, L.-W; YANG, Q.-Q et al.Solid state communications. 1999, Vol 112, Num 5, pp 255-259, issn 0038-1098Article

Preparation, electrical and optical properties of (Pb, Ca)TiO₃ thin films using a modified sol-gel techniqueDINGHUA BAO; XIAOQING WU; LIANGYING ZHANG et al.Thin solid films. 1999, Vol 350, Num 1-2, pp 30-37, issn 0040-6090Article