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Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory studyGUANGFEN ZHOU; JIE REN; SHAOWEN ZHANG et al.Thin solid films. 2012, Vol 524, pp 179-184, issn 0040-6090, 6 p.Article
A study of the evaporative deposition process: Pipes and truncated transport dynamicsZHENG, R.The European physical journal. E, Soft matter (Print). 2009, Vol 29, Num 2, pp 205-218, issn 1292-8941, 14 p.Article
Simulation model for an EB-PVD coating structure using the level set methodBAEK, S; PRABHU, V.Journal of manufacturing processes. 2009, Vol 11, Num 1, pp 1-7, issn 1526-6125, 7 p.Article
Laser and arc weld methods for direct metal deposition of WaspaloyHUSSEIN, N. I. S; PASHBY, I. R; MCCARTNEY, D. G et al.International journal of manufacturing technology and management. 2009, Vol 17, Num 4, pp 419-425, issn 1368-2148, 7 p.Article
Methylaminosilane fed Inductively Coupled Plasmas for Silicon Nitride DepositionDI MUNDO, Rosa; PALUMBO, Fabio; FRACASSI, Francesco et al.Plasma processes and polymers (Print). 2008, Vol 5, Num 8, pp 770-777, issn 1612-8850, 8 p.Article
A cellular automaton technique for modelling of a binary dendritic growth with convectionDAMING LI; RUO LI; PINGWEN ZHANG et al.Applied mathematical modelling. 2007, Vol 31, Num 6, pp 971-982, issn 0307-904X, 12 p.Article
Nucleation and growth of copper on mesoporous silicon by immersion platingKUMAR, Pushpendra; HUBER, Patrick.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 9, pp 2864-2869, issn 0022-3727, 6 p.Article
Effects of incidence angles on the microstructure of Co-Nb thin films prepared by ion beam assisted depositionPAN, F; LI, X. W; DING, Y. Q et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 4832-4836, issn 0257-8972, 5 p.Conference Paper
Preparation of silicon thin films by intense pulsed ion-beam evaporation method with low temperature processLEE, Jung-Hui; CHU, Byung-Yoon; CHOI, Byoung-Jung et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 4961-4964, issn 0257-8972, 4 p.Conference Paper
Crystalline orientation and surface structure anisotropy of annealed thin tungsten filmsYUAN WANG; SONG, Z. X; DAYAN MA et al.Surface & coatings technology. 2007, Vol 201, Num 9-11, pp 5518-5521, issn 0257-8972, 4 p.Conference Paper
Low temperature InP layer transfer onto Si by helium implantation and direct wafer bondingSINGH, R; RADU, I; SCHOLZ, R et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1311-1314, issn 0268-1242, 4 p.Article
Simulation for deposition of cadmium telluride thin films in hot wall epitaxial system using Monte carlo techniqueVENKATACHALAM, T; GANESAN, S; SAKTHIVEL, K et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 8, pp 1650-1657, issn 0022-3727, 8 p.Article
Structural and morphological characterization of chemically deposited silver filmsESTRADA-RAYGOZA, I. C; SOTELO-LERMA, M; RAMIREZ-BON, R et al.The Journal of physics and chemistry of solids. 2006, Vol 67, Num 4, pp 782-788, issn 0022-3697, 7 p.Article
Growth of ZnO nanorods by air annealing of ZnO films with an applied electric fieldPARKANSKY, N; SHALEV, G; ALTERKOP, B et al.Surface & coatings technology. 2006, Vol 201, Num 6, pp 2844-2848, issn 0257-8972, 5 p.Article
Investigation of Ar incident energy and Ar incident angle effects on surface roughness of Cu metallic thin film in ion assisted depositionSU, Ming-Horng; LU, Jian-Ming.Computational materials science. 2006, Vol 38, Num 2, pp 386-394, issn 0927-0256, 9 p.Article
Material properties and growth control of undoped and Sn-doped In2O3 thin films prepared by using ion beam technologiesKOH, Seok-Keun; HAN, Young-Gun; JUNG HWAN LEE et al.Thin solid films. 2006, Vol 496, Num 1, pp 81-88, issn 0040-6090, 8 p.Conference Paper
Microstructure and physical properties of arc ion plated TiAlN/Cu thin filmLEU, Ming-Sheng; LO, Shen-Chuan; JIN BAO WU et al.Surface & coatings technology. 2006, Vol 201, Num 7, pp 3982-3986, issn 0257-8972, 5 p.Conference Paper
C60 single domain growth on indium phosphide and its reaction with atomic hydrogenEREMTCHENKO, M; DÖRING, S; TEMIROV, R et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 4, pp 045410.1-045410.10, issn 1098-0121Article
Steering effects on growth instability during step-flow growth of Cu on Cu(1,1,17)SEO, Jikeun; KIM, Hye-Young; KIM, J.-S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 7, pp 075414.1-075414.5, issn 1098-0121Article
Temperature dependence of island growth shapes during submonolayer deposition of Ag on Ag(111)COX, Erik; MAOZHI LI; CHUNG, Po-Wen et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 115414.1-115414.9, issn 1098-0121Article
Etude par microscopie en champ proche et diffraction d'électrons rapides des premiers stades de croissance de systèmes métalliques. Application aux systèmes Fe/Fe(100), Cu/Fe(100) et Fe/Fe(100) = Scanning Tunneling Microscopy and Reflection High-Energy Electron Diffraction studies of the initial growth of metallic systems. Applications to Fe/Fe(100), Cu/Fe(100) et Fe/Fe(100)Dulot, Frederic; Malterre, Daniel.2000, 184 p.Thesis
Precise control boosts homegrown coater's productivity, qualityControl engineering. 1998, Vol 45, Num 12, issn 0010-8049, p.19Article
A Ti-B-N film formed by EB-ion plating and N ion bombardment of a Ti-B filmYANG, Q. Q; WEN, L. S; CHEN, X. Z et al.Vacuum. 1995, Vol 46, Num 2, pp 181-183, issn 0042-207XArticle
Kinetics of the growth of tantalum carbide layers on graphite substrates upon pyrolysis of tantalum pentachlorideSINANI, I. L; CHUZHKO, R. K; CHERNIKOV, Y. P et al.Inorganic materials. 1995, Vol 31, Num 5, pp 612-616, issn 0020-1685Article
Epitaxial growth of Pb(Zr,Ti)O3 fils on Nd1.85 Ce0.15CuO4-x films by pulsed laser ablationJIAN-SHING LUO; WEN-TAI LIN; LONG WU et al.Materials chemistry and physics. 1995, Vol 40, Num 3, pp 202-206, issn 0254-0584Article
