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Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling BarrierGUOXING CHEN; ZONGLIANG HUO; LEI JIN et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 744-746, issn 0741-3106, 3 p.Article
Experimental set-up for simultaneously measuring changes in LD temperature and flying height of HAMR-HGANANIWA, Irizo; NAKAMURA, Shigeo.Microsystem technologies. 2014, Vol 20, Num 8-9, pp 1455-1460, issn 0946-7076, 6 p.Conference Paper
Identification of contact bouncing vibrations using TFC active slider and adaptive fuzzy control for advanced active slider designWANG, Y. F; SHENG, G; CHANG, J. Y et al.Microsystem technologies. 2014, Vol 20, Num 8-9, pp 1705-1713, issn 0946-7076, 9 p.Conference Paper
Measurement of slot misalignment in an optical archive data storage system using dual sensingLIM, Sung-Yong; HYUNSEOK YANG; SEUNGHON YOO et al.Microsystem technologies. 2014, Vol 20, Num 8-9, pp 1549-1555, issn 0946-7076, 7 p.Conference Paper
Multi-resolution HDD contact detection technique for low SNR applicationsDAUGELA, Antanas; TRANTHAM, Jon D; RYUN, Scott E et al.Microsystem technologies. 2014, Vol 20, Num 8-9, pp 1597-1603, issn 0946-7076, 7 p.Conference Paper
Statistical energy analysis on vibrational energy transmission in hard disk drive componentsAJAVAKOM, Nopdanai; TANTHANASIRIKUL, Pinporn.Microsystem technologies. 2014, Vol 20, Num 8-9, pp 1753-1760, issn 0946-7076, 8 p.Conference Paper
Yield-driven design of tunnelling SRAM cellsZUO, D; KELLY, M. J.Electronics letters. 2013, Vol 49, Num 16, pp 1033-1035, issn 0013-5194, 3 p.Article
Stocker l'électricité en pompant des gaz: Une introduction aux procédés thermodynamiques de stockage : Le stockage de l'électricitéRUER, Jacques.REE. Revue de l'électricité et de l'électronique. 2013, Num 3, pp 56-62, issn 1265-6534, 7 p.Article
Beyond the Helium ConundrumGLOWACKI, Bartek A; NUTTALL, William J; CLARKE, Richard H et al.IEEE transactions on applied superconductivity. 2013, Vol 23, Num 3, issn 1051-8223, 0500113.1-0500113.13, 1Conference Paper
Phase change materials : RESISTIVE SWITCHING PHENOMENA IN THIN FILMS: MATERIALS, DEVICES, AND APPLICATIONSRAOUX, Simone; LELMINI, Daniele; WUTTIG, Matthias et al.MRS bulletin. 2012, Vol 37, Num 2, pp 118-123, issn 0883-7694, 6 p.Article
Characteristics of reverse overwrite process in shingled recording scheme at ultra-high track densitySHAOPING LI; MENDEZ, Hector; TERRILL, Dave et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 252-259, issn 0304-8853, 8 p.Conference Paper
Comparison of one- and two-dimensional detectors on simulated and spin-stand readback waveformsKHEONG SANN CHAN; ELIDRISSI MOULAY RACHID; EASON, Kwaku et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 336-343, issn 0304-8853, 8 p.Conference Paper
Individual bit island reversal and switching field distribution in perpendicular magnetic bit patterned mediaCHEN, Y. J; HUANG, T. L; ZHAO, J. M et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 264-268, issn 0304-8853, 5 p.Conference Paper
Injection of synthesized FePt nanoparticles in hole-patterns for bit patterned mediaHACHISU, Takuma; SATO, Wataru; ISHIZUKA, Shugo et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 303-308, issn 0304-8853, 6 p.Conference Paper
Looking back on Censtor and PMRCHAMILTON, Harold.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 363-364, issn 0304-8853, 2 p.Conference Paper
Perpendicular magnetic recording-Its development and realizationIWASAKI, Shun-Ichi.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 244-247, issn 0304-8853, 4 p.Conference Paper
Shingle magnetic recording assessment with spinstand measurementKIYONO, Hiroshi; NAKADA, Osamu; MORI, Takahiro et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 3, pp 321-326, issn 0304-8853, 6 p.Conference Paper
A multiple-state micro-mechanical programmable memoryCABRERA, Rafmag; MERCED, Emmanuelle; DAVILA, Noraica et al.Microelectronic engineering. 2011, Vol 88, Num 11, pp 3231-3234, issn 0167-9317, 4 p.Article
Linear protrusion structure on carriage-arm surface for reduction of flow-induced carriage vibration in hard disk drivesKOGANEZAWA, Shinji; OHTSUKA, Shinichi; FUNABASHI, Kei et al.Microsystem technologies. 2011, Vol 17, Num 5-7, pp 799-804, issn 0946-7076, 6 p.Article
Characterization of slider-lubricant interaction with tribo-currentYIJUN MAN; BO LIU; SHENGBIN HU et al.Microsystem technologies. 2011, Vol 17, Num 5-7, pp 1003-1007, issn 0946-7076, 5 p.Article
DC and AC analyses of a printed flexible memory deviceLIAN, Keryn; LI, Rophina; HUI WANG et al.Organic electronics (Print). 2010, Vol 11, Num 6, pp 1141-1144, issn 1566-1199, 4 p.Article
DYNAMIC ABSORBER DESIGN FOR ACTUATOR ARM OF HARD DISK DRIVES TO IMPROVE IMPACT RESISTANCEYAN, T. H; PU, H. Y; XU, C et al.Mechanics based design of structures and machines. 2010, Vol 38, Num 1, pp 50-73, issn 1539-7734, 24 p.Article
Electron Trap Profiling Near Al2O3/Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and SensingZAHID, M. B; ARREGHINI, A; DEGRAEVE, R et al.IEEE electron device letters. 2010, Vol 31, Num 10, pp 1158-1160, issn 0741-3106, 3 p.Article
Adaptive Regulation in Switched Bimodal Systems: An Experimental EvaluationZHIZHENG WU; FOUED BEN AMARA.IEEE transactions on control systems technology. 2010, Vol 18, Num 4, pp 885-895, issn 1063-6536, 11 p.Article
RESET Mechanism of TiOx Resistance-Change Memory DeviceWEI WANG; FUJITA, Shinobu; SIMON WONG, S et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 733-735, issn 0741-3106, 3 p.Article