Scanning Auger microscopy studies of microelectronic featuresSANTUCCI, S; LOZZI, L; PACIFICO, D et al.SPIE proceedings series. 1998, pp 51-58, isbn 0-8194-2968-6Conference Paper

SiO_x surface stoichiometry by XPS : a comparison of various methodsALFONSETTI, R; DE SIMONE, G; PASSACANTANDO, M et al.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 89-92, issn 0142-2421Conference Paper

X-ray reflectivity study on TiN/Ti/Si structures before and after annealingSANTUCCI, S; GIULIANI, P; PICOZZI, P et al.Thin solid films. 2000, Vol 360, Num 1-2, pp 89-95, issn 0040-6090Article

XPS studies on SiO_x thin filmsALFONSETTI, R; LOZZI, L; PASSACANTANDO, M et al.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 222-225, issn 0169-4332, AConference Paper

Surface stoichiometry determination of SiO_xN_y thin films by means of XPSLOZZI, L; PASACANTANDO, M; PICOZZI, P et al.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 190-192, issn 0142-2421Conference Paper

Determination of stoichiometry of SiO_x thin films using an Auger parameterALFONSETTI, R; LOZZI, L; PASSACANTANDO, M et al.Thin solid films. 1992, Vol 213, Num 2, pp 158-159, issn 0040-6090Article

Proximity gettering of slow diffuser contaminants in CMOS image sensorsRUSSO, F; MOCCIA, G; CARLINI, M et al.Solid-state electronics. 2014, Vol 91, pp 91-99, issn 0038-1101, 9 p.Article

Properties of stacked dielectric films composed of SiO₂/Si₃N₄/SiO₂SANTUCCI, S; LOZZI, L; PASSACANTANDO, M et al.Journal of non-crystalline solids. 1999, Vol 245, pp 224-231, issn 0022-3093Conference Paper

Scanning Auger microscopy study of electromigration induced failure in submicrometric microelectronic devicesSANTUCCI, S; LOZZI, L; PACIFICO, D et al.Applied surface science. 1999, Vol 144-45, pp 329-333, issn 0169-4332Conference Paper