Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJANDHYALA, Srivatsava; ABRAHAM, Aby; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1974-1979, issn 0018-9383, 6 p.Article

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness AsymmetryJANDHYALA, Srivatsava; KASHYAP, Rutwick; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1002-1007, issn 0018-9383, 6 p.Article

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar CurrentANGHEL, Costin; GUPTA, Anju; HRAZIIA et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1649-1654, issn 0018-9383, 6 p.Article

An analysis on the ambipolar current in Si double-gate tunnel FETsHRAZIIA; VLADIMIRESCU, Andrei; AMARA, Amara et al.Solid-state electronics. 2012, Vol 70, pp 67-72, issn 0038-1101, 6 p.Conference Paper

RRAM-based FPGA for Normally Off, Instantly On applicationsTURKYILMAZ, Ogun; ONKARAIAH, Santhosh; REYBOZ, Marina et al.Journal of parallel and distributed computing (Print). 2014, Vol 74, Num 6, pp 2441-2451, issn 0743-7315, 11 p.Article

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurementANGHEL, Costin; BAKEROOT, Benoit; CHAUHAN, Yogesh S et al.IEEE electron device letters. 2006, Vol 27, Num 7, pp 602-604, issn 0741-3106, 3 p.Article

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effectsSINGH CHAUHAN, Yogesh; ANGHEL, Costin; DECLERCQ, Michel et al.Solid-state electronics. 2006, Vol 50, Num 11-12, pp 1801-1813, issn 0038-1101, 13 p.Article

Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-upHRAZIIA; MAKOSIEJ, Adam; DELERUYELLE, Damien et al.Solid-state electronics. 2013, Vol 90, pp 99-106, issn 0038-1101, 8 p.Conference Paper

Carbon nanotube chemistry and assembly for electronic devicesDERYCKE, Vincent; AUVRAY, Stéphane; CHIMOT, Nicolas et al.Comptes rendus. Physique. 2009, Vol 10, Num 4, pp 330-347, issn 1631-0705, 18 p.Article

Nanotube Transistors as Direct Probes of the Trap Dynamics at Dielectric-Organic Interfaces of Interest in Organic Electronics and Solar CellsANGHEL, Costin; DERYCKE, Vincent; FILORAMO, Arianna et al.Nano letters (Print). 2008, Vol 8, Num 11, pp 3619-3625, issn 1530-6984, 7 p.Article