SIZE EFFECT IN THE ELECTRICAL PROPERTIES OF THIN EPITAXIAL BISMUTH FILMS = EFFET DIMENSIONNEL DANS LES PROPRIETES ELECTRIQUES DE COUCHES MINCES EPITAXIQUES DE BISMUTHASAHI H; KINBARA A.1980; THIN. SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 66; NO 2; PP. 131-137; BIBL. 10 REF.Article

Self-organized quantum wires and dots in III-V semiconductorsASAHI, H.Advanced materials (Weinheim). 1997, Vol 9, Num 13, pp 1019-1026, issn 0935-9648Article

TUNNELING CHARACTERISTICS OF THIN EPITAXIAL BI-FILM-SIO₂-PB JUNCTIONS.ASAHI H; KINBARA A.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 1829-1832; BIBL. 12 REF.Article

ELECTROMAGNETIC PROPERTIES OF THIN EPITAXIAL BI FILMS IN MAGNETIC FIELDS UP TO 85 KG.ASAHI H; BABA S; KINBARA A et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 129-132; BIBL. 13 REF.Article

0.66 MU M ROOM-TEMPERATURE OPERATION OF IN GAAIP DH LASER DIODES GROWN BY MBEKAWAMURA Y; ASAHI H; NAGAI H et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 5; PP. 163-165; BIBL. 8 REF.Article

OPTICALLY PUMPED LASER ACTION AT 77K OF INGAP/INGAAIP DOUBLE HETEROSTRUCTURES GROWN BY MBEASAHI H; KAWAMURA Y; NAGAI H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 62-63; BIBL. 5 REF.Article

STRUCTURE AND ELECTRICAL PROPERTIES OF THIN BISMUTH FILMS.KAWAZU A; SAITO Y; ASAHI H et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 2; PP. 261-266; BIBL. 8 REF.Article

Continuous cultivation of intraerythrocytic Plasmodium falciparum in a serum-free medium with the use of a growth-promoting factorASAHI, H; KANAZAWA, T.Parasitology (London. Print). 1994, Vol 109, Num 4, pp 397-401, issn 0031-1820Article

Refractive index of InGaAs/InGaAs multiquantum-well layers grown by molecular-beam epitaxyNOJIMA, S; ASAHI, H.Journal of applied physics. 1988, Vol 63, Num 2, pp 479-483, issn 0021-8979Article

Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength regionKAWAMURA, Y; ASAHI, H.Applied physics letters. 1984, Vol 45, Num 2, pp 152-154, issn 0003-6951Article

IMPROVED PROPERTIES OF IN_XGA_1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATESKAWAMURA Y; ASAHI H; IKEDA M et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3445-3452; BIBL. 13 REF.Article

PHOTOLUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR BEAM EPITAXYKAWAMURA Y; IKEDA M; ASAHI H et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 481-484; BIBL. 12 REF.Article

Charge-transfer complexes of 1,4,5,8-naphthalenetetrones and 1,4,9,10-anthracenetetrones. Novel acceptors for electrically conducting materialsASAHI, H; INABE, T.Chemistry of materials. 1994, Vol 6, Num 10, pp 1875-1879, issn 0897-4756Article

MOLECULAR-BEAM EPITAXIAL GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL PROPERTIESASAHI H; KAWAMURA Y; IKEDA M et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2852-2859; BIBL. 22 REF.Article

Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxyNOJIMA, S; ASAHI, H.Journal of applied physics. 1988, Vol 63, Num 2, pp 479-483, issn 0021-8979Article

High-temperature observation of heavy-hole and light-hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxyKAWAGUCHI, Y; ASAHI, H.Applied physics letters. 1987, Vol 50, Num 18, pp 1243-1245, issn 0003-6951Article

PROPERTIES OF MOLECULAR BEAM EPITAXIAL IN_XGA_1-XAS (X EQUIV. A 0.53) LAYERS GROWN ON INP SUBSTRATESASAHI H; OKAMOTO H; IKEDA M et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 565-573; BIBL. 17 REF.Article

Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxyTAMBO, H; ASAHI, H.Journal of crystal growth. 2013, Vol 383, pp 57-62, issn 0022-0248, 6 p.Article

Silicon doping in InP grown by molecular beam epitaxyKAWAMURA, Y; ASAHI, H.Applied physics letters. 1983, Vol 43, Num 8, pp 780-782, issn 0003-6951Article

MBE-GROWN INGAAS/INP BH LASERS WITH LPE BURYING LAYERSKAWAMURA Y; NOGUCHI Y; ASAHI H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 91-92; BIBL. 5 REF.Article

Conditions under which cracks occur in modified 13% chromium steel in wet hydrogen sulfide environmentsHARA, T; ASAHI, H.Corrosion (Houston, Tex.). 2000, Vol 56, Num 5, pp 533-542, issn 0010-9312Article

HYBRID LPE/MBE-GROWN INGAASP/INP DFB LASERSASAHI H; KAWAMURA Y; NOGUCHI Y et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 14; PP. 507-509; BIBL. 7 REF.Article

Role of oxygen radicals in the pathogenesis of acute gastric mucosal lesion under obstructive jaundiceITO, H; ASAHI, H; HORIUCHI, S et al.Nippon Geka Gakkai Zasshi. 1993, Vol 94, Num 3, pp 225-233, issn 0301-4894Article

Observations of room-temperature excitons in InGaP/InGaAIP MQW structuresTANAKA, H; KAWAMURA, Y; ASAHI, H et al.Electronics Letters. 1987, Vol 23, Num 4, pp 166-168, issn 0013-5194Article

Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperatureKAWAMURA, Y; WAKITA, K; ASAHI, H et al.Electronics Letters. 1985, Vol 21, Num 9, pp 371-373, issn 0013-5194Article