Les architectures innovantes sur silicium mince: Un second souffle pour la loi de Moore ? : L'électronique nanométrique = Innovative architectures on thin silicon : Second lease of life for Moore's law?AUTRAN, J. L; MUNTEANU, D.REE. Revue de l'électricité et de l'électronique. 2003, Num 8, pp 21-31, issn 1265-6534, 11 p.Article

Capacitance non-linearity study in Al₂O₃ MIM capacitors using an ionic polarization modelBECU, S; CREMER, S; AUTRAN, J. L et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2422-2426, issn 0167-9317, 5 p.Conference Paper

Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectricsMUNTEANU, D; AUTRAN, J. L; HARRISON, S et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1911-1918, issn 0022-3093, 8 p.Conference Paper

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxidesMUNTEANU, D; AUTRAN, J.-L; DECARRE, E et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 206-212, issn 0022-3093, 7 p.Conference Paper

Study of hot carrier degradation in DRAM cells combining random telegraph signal and charge pumping measurementsPIERUNEK, S; POGANY, D; AUTRAN, J. L et al.Journal of non-crystalline solids. 1999, Vol 245, pp 59-66, issn 0022-3093Conference Paper

Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distributionAUTRAN, J.-L; MUNTEANU, D; DINESCU, R et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 219-224, issn 0022-3093, 6 p.Conference Paper

An overview of buried oxides on silicon : New processes and radiation effectsLERAY, J.-L; PAILLET, P; AUTRAN, J.-L et al.Journal de physique. III (Print). 1996, Vol 6, Num 12, pp 1625-1646, issn 1155-4320Conference Paper

Use of the charge pumping technique to understand non-uniform n-channel MOSFET degradationDJAHLI, F; AUTRAN, J. L; PLOSSU, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 23, Num 2, pp 120-122, issn 0921-5107Article

Real-time soft-error rate measurements: A reviewAUTRAN, J. L; MUNTEANU, D; ROCHE, P et al.Microelectronics and reliability. 2014, Vol 54, Num 8, pp 1455-1476, issn 0026-2714, 22 p.Article

Characterization of Si-SiO₂ interface states : comparison between different charge pumping and capacitance techniquesAUTRAN, J. L; SEIGNEUR, F; PLOSSU, C et al.Journal of applied physics. 1993, Vol 74, Num 6, pp 3932-3935, issn 0021-8979Article

Etude par pompage de charge des défauts induits à l'interface Si-SiO₂ par rayonnements ionisants = Charge pumping study of radiation-induced defects at Si-SiO2 interfaceAUTRAN, J.-L; BALLAND, B; VALLARD, J.-P et al.Journal de physique. III (Print). 1994, Vol 4, Num 9, pp 1707-1721, issn 1155-4320Conference Paper

Modifications of optical absorption band of E'_γ center in silicaAGNELLO, S; BOSCAINO, R; BUSCARINO, G et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1801-1804, issn 0022-3093, 4 p.Conference Paper

Luminescence activity of surface and interior Ge-oxygen deficient centers in silicaCANNIZZO, A; AGNELLO, S; GRANDI, S et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1805-1809, issn 0022-3093, 5 p.Conference Paper

Laserlike emission from silica inverse opals infiltrated with Rhodamine 6GALENCAR, Marcio A. R. C; MACIEL, Glauco S; DE ARAUJO, Cid B et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1846-1849, issn 0022-3093, 4 p.Conference Paper

Brillouin ultraviolet light scattering on vitreous silicaBALDI, G; CAPONI, S; SANTUCCI, S. C et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1919-1923, issn 0022-3093, 5 p.Conference Paper

Refractive index measurements of thin films using both Brewster and m-line technique : A combined experimental setupSCHUTZMANN, S; CASALBONI, M; DE MATTEIS, F et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1814-1818, issn 0022-3093, 5 p.Conference Paper

Surface generation of color centers in lithium fluoride by EUV-irradiationNICHELATTI, E; BONFIGLI, F; FAENOV, A. Ya et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1774-1779, issn 0022-3093, 6 p.Conference Paper

Ge related centers induced by gamma irradiation in sol-gel Ge-doped silicaAGNELLO, S; BOSCAINO, R; CANNAS, M et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 134-138, issn 0022-3093, 5 p.Conference Paper

A new floating gate compact model applied to flash memory cellLAFFONT, R; MASSON, P; BERNARDINI, S et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 250-255, issn 0022-3093, 6 p.Conference Paper

Dependence on Ge doping of specific volume change in silica induced by electron-beam irradiationJACQUELINE, A.-S; GARCIA-BLANCO, S; POUMELLEC, B et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 284-288, issn 0022-3093, 5 p.Conference Paper

A comparison between different methods of calculating the radiative lifetime of the ⁴I_13/2 level of Er³⁺ in various glassesCHEN, B. J; RIGHINI, G. C; BETTINELLI, M et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 319-323, issn 0022-3093, 5 p.Conference Paper

Pyrolysis pathway of sol-gel derived organic/inorganic hybrid nanocompositesCECCATO, Riccardo; DIRE, Sandra; LUTTEROTTI, Luca et al.Journal of non-crystalline solids. 2003, Vol 322, Num 1-3, pp 22-28, issn 0022-3093, 7 p.Conference Paper

On the electrical conductivity in porous silicon under light and electron beamsDAFINEI, A. S; DAFINEI, A. A.Journal of non-crystalline solids. 1999, Vol 245, pp 92-96, issn 0022-3093Conference Paper

Influence of polycide deposition on the reliability of wet and nitrided oxidesYCKACHE, K; BOIVIN, P; BAIGET, F et al.Journal of non-crystalline solids. 1999, Vol 245, pp 97-103, issn 0022-3093Conference Paper

Photoluminescence activity in natural silica excited in the vacuum-UV rangeCANNAS, M; BARBERA, M; BOSCAINO, R et al.Journal of non-crystalline solids. 1999, Vol 245, pp 190-195, issn 0022-3093Conference Paper