2004 U.S. workshop on the physics and chemistry of II-VI materialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2005, Vol 34, Num 6, pp 681-968, issn 0361-5235, 288 p.Conference Proceedings

2011 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K; ANTER, Y et al.Journal of electronic materials. 2012, Vol 41, Num 10, issn 0361-5235, 334 p.Conference Proceedings

Synthesis of ultra-high-purity CdTe ingots by the traveling heater methodAUDET, N; COSSETTE, M.Journal of electronic materials. 2005, Vol 34, Num 6, pp 683-686, issn 0361-5235, 4 p.Conference Paper

Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substratesNERETINA, S; SOCHINSKII, N. V; MASCHER, P et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 786-790, issn 0361-5235, 5 p.Conference Paper

Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectorsGILMORE, Angelo Scotty; BANGS, James; GERRISH, Amanda et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 913-921, issn 0361-5235, 9 p.Conference Paper

Laser-Assisted Chemical Polishing of Silicon (112) WafersDANDEKAR, Niru; CHIVAS, Robert; SILVERMAN, Scott et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2790-2794, issn 0361-5235, 5 p.Conference Paper

Recent Results on Growth of (211)B CdTe on (211 )Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase EpitaxySHINTRI, Shashidhar; SUNIL RAO; WIJEWARNASURIYA, Priyalal et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2824-2827, issn 0361-5235, 4 p.Conference Paper

Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(21 1) Through a Nanopatterned Silicon Nitride MaskFAHEY, S; BOMMENA, R; KODAMA, R et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2899-2907, issn 0361-5235, 9 p.Conference Paper

A new growth method for CdTe : A breakthrough toward large areasPELLICIARI, B; DIERRE, F; BRELLIER, D et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 693-698, issn 0361-5235, 6 p.Conference Paper

Exfoliation and blistering of Cd_0.96Zn_0.04Te substrates by ion implantationMICLAUS, C; MALOUF, G; JOHNSON, S. M et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 859-863, issn 0361-5235, 5 p.Conference Paper

Spatially resolved photoluminescence and transmission spectra of HgCdTeFURSTENBERG, Robert; WHITE, Jeffrey O; OLSON, Gregory L et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 791-794, issn 0361-5235, 4 p.Conference Paper

Colloidal HgTe Material for Low-Cost Detection into the MWIRLHUILLIER, Emmanuel; KEULEYAN, Sean; HENG LIU et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2725-2729, issn 0361-5235, 5 p.Conference Paper

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA IndustryAQARIDEN, F; ELSWORTH, J; ZHAO, J et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2700-2706, issn 0361-5235, 7 p.Conference Paper

Pressure dependence of intersubband transitions in HgTe/Hg_0.3Cd_0.7Te superlatticesBECKER, C. R; LATUSSEK, V; LANDWEHR, G et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 811-814, issn 0361-5235, 4 p.Conference Paper

An improved method for Hg_1-xCd_xTe surface chemistry characterizationOLSHOVE, R; GARWOOD, G; MOWAT, I et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 851-858, issn 0361-5235, 8 p.Conference Paper

Diffusion of gold and native defects in mercury cadmium tellurideCIANI, Anthony J; OGUT, Serdar; BATRA, Inder P et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 868-872, issn 0361-5235, 5 p.Conference Paper

1/f noise in HgCdTe photodiodesKINCH, M. A; WAN, C.-F; BECK, J. D et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 928-932, issn 0361-5235, 5 p.Conference Paper

Semi-insulating CdTe with a minimized deep-level dopingGRILL, R; FRANC, J; TURKEVYCH, I et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 939-943, issn 0361-5235, 5 p.Conference Paper

ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs)KARMAKAR, Supriya; SUAREZ, Ernesto; GOGNA, Mukesh et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2663-2670, issn 0361-5235, 8 p.Conference Paper

Inductively coupled plasma etching of HgCdTe using a CH₄-based mixtureLAFFOSSE, E; BAYLET, J; CHAMONAL, J. P et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 740-745, issn 0361-5235, 6 p.Conference Paper

Al ohmic contacts to HCl-treated Mg_xZn_1-xOSHENG, H; SARAF, G; EMANETOGLU, N. W et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 754-757, issn 0361-5235, 4 p.Conference Paper

Comparison of normal and inverted band structure HgTe/CdTe superlattices for very long wavelength infrared detectorsGREIN, C. H; JUNG, H; SINGH, R et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 905-908, issn 0361-5235, 4 p.Conference Paper

Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) SubstratesZHAO, W. F; BRILL, G; CHEN, Y et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2852-2856, issn 0361-5235, 5 p.Conference Paper

Improved model for the analysis of FTIR transmission spectra from multilayer HgCdTe structuresDARASELIA, M; CARMODY, M; EDWALL, D. D et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 762-767, issn 0361-5235, 6 p.Conference Paper

Lateral uniformity in HgCdTe layers grown by molecular beam epitaxyNOSHO, Brett Z; ROTH, John A; JENSEN, John E et al.Journal of electronic materials. 2005, Vol 34, Num 6, pp 779-785, issn 0361-5235, 7 p.Conference Paper