Field evaporation stimulated by a coherent electromagnetic waveBAKHTIZIN, R. Z; VALEYEV, V. G.Surface science. 1990, Vol 231, Num 1-2, pp 135-138, issn 0039-6028, 4 p.Conference Paper

Determination of activation energies using field emission fluctuations from semiconductorsBAKHTIZIN, R. Z; GHOTS, S. S.Surface science. 1991, Vol 246, Num 1-3, pp 60-63, issn 0039-6028, 4 p.Conference Paper

Ordering of missing-row-defects forming (2×n)-Bi phases on the Si(1000) 2×1 surface studied by the scanning tunneling microscopyPARK, C; BAKHTIZIN, R. Z; HASHIZUME, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 4A, pp L528-L531, issn 0021-4922, 2Article

Scanning tunneling microscopy of √3×√3-Bi reconstruction on the Si(111) surfaceCHAN PARK; BAKHTIZIN, R. Z; HASHIZUME, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 2B, pp L290-L293, issn 0021-4922, 2Article

Particularités des spectres hors équilibres (pulsés) des fluctuations dans les émetteurs semiconducteurs à eeffet de champBAKHTIZIN, R. Z; GOTS, S. S; ZARIPOV, R. F et al.Radiotehnika i èlektronika. 1986, Vol 31, Num 6, pp 1232-1235, issn 0033-8494Article

Statistical model of semiconductor field emitter with atomically clean surfaceBAKHTIZIN, R. Z; GHOTS, S. S; GLAZER, P. V et al.Journal of micromechanics and microengineering (Print). 1993, Vol 3, Num 2, pp 45-48, issn 0960-1317Article

Particularités des bruits du courant liés aux processus en volume dans les émetteurs semiconducteurs de champBAKHTIZIN, R. Z; GOTS, S. S; CHERNIN-YAKHNYUK, I. M et al.Radiotehnika i èlektronika. 1988, Vol 33, Num 9, pp 1937-1943, issn 0033-8494Article

Fonctions de corrélation espace-temps d'un bruit de scintillation du courant d'émission de champ à partir du siliciumBAKHTIZIN, R. Z; GOTS, S. S; TLYAUBERDIN, A. I et al.Radiotehnika i èlektronika. 1985, Vol 30, Num 8, pp 1638-1642, issn 0033-8494Article

Model of m-level low-frequency current fluctuations in metal thermionic cathodesGHOTS, S. S; BAKHTIZIN, R. Z.Applied surface science. 2003, Vol 215, Num 1-4, pp 105-112, issn 0169-4332, 8 p.Conference Paper

Elementary acts of field emission current fluctuations from semiconductorsBAKHTIZIN, R. Z; GHOTS, S. S; GLAZER, P. V et al.Surface science. 1991, Vol 247, Num 2-3, pp 333-336, issn 0039-6028, 4 p.Conference Paper

Problems of the Metrologic Provision of the Technique for Measuring the Structure of Solids Using Atomic Force Microscopy with Nanometer ResolutionGOTZ, S. S; BAKHTIZIN, R. Z; ZHURAVLEV, G. I et al.Nanotechnologies in Russia (Print). 2013, Vol 8, Num 5-6, pp 342-346, issn 1995-0780, 5 p.Article

Statistical model of semiconductor field emitterBAKHTIZIN, R. Z; GHOTS, S. S.Surface science. 1992, Vol 266, Num 1-3, pp 121-125, issn 0039-6028Conference Paper

Scanning tunneling microscopy study of the (3×1) reconstruction induced by Li adsorption on the Si(111) surfaceBAKHTIZIN, R. Z; PARK, C; HASHIZUME, T et al.Applied surface science. 1995, Vol 87-88, pp 347-352, issn 0169-4332Conference Paper

Energy spectra of field emission electrons from high-temperature superconductorsBAKHTIZIN, R. Z; LOBANOV, V. M; MESYATS, V. G et al.Fizika metallov i metallovedenie. 1989, Vol 67, Num 3, pp 610-611, issn 0015-3230, 2 p.Article

STM study of Sr adsorption on Si(100) surfaceBAKHTIZIN, R. Z; KISHIMOTO, J; HASHIZUME, T et al.Applied surface science. 1996, Vol 94-95, pp 478-484, issn 0169-4332Conference Paper

Structure of the Bi/Si(111) surface by field-ion scanning tunneling microscopyPARK, C; BAKHTIZIN, R. Z; HASHIZUME, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 3B, pp 1416-1418, issn 0021-4922, 1Article

Adsorption and Electronic Structure of Single C60F18 Molecule on Si(111)-7×7 SurfaceBAKHTIZIN, R. Z; ORESHKIN, A. I; MURUGAN, P et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2010, Vol 18, Num 1-6, pp 369-375, issn 1536-383X, 7 p.Conference Paper

Epitaxial C60 thin films on Bi(0001)SADOWSKI, J. T; BAKHTIZIN, R. Z; ORESHKIN, A. I et al.Surface science. 2007, Vol 601, Num 23, issn 0039-6028, L136-L139Article