A NEW K.P CALCULATION FOR PBSEBANGERT E; KASTNER P.1972; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1972; VOL. 54; NO 1; PP. 173-181; ABS. ALLEM.; BIBL. 16 REF.Serial Issue

CALCULATION OF SURFACE STATES IN ACCUMULATION LAYER OF TELLURIUM.KACZMAREK E; BANGERT E.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 3; PP. 165-168; ABS. ALLEM.; BIBL. 8 REF.Article

INVERSION LAYERS OF TELLURIUM IN MAGNETIC FIELDSKACZMAREK E; BANGERT E.1980; J. PHYS. C: SOLID STATE PHYS.; GBR; DA. 1980; VOL. 13; NO 4; PP. 695-704; BIBL. 14 REF.Article

INTERVALENCE BAND TRANSITIONS IN TELLURIUM. I. POLARIZATION E//CFISCHER D; BANGERT E; GROSSE P et al.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 55; NO 2; PP. 527-535; ABS. ALLEM.; BIBL. 24 REF.Serial Issue

SURFACE QUANTUM OSCILLATIONS IN SILICON.LANDWEHR G; BANGERT E; KLITZING KV et al.1975; IN: PHYS. SOUS CHAMPS MAGN. INTENSES. COLLOQ. INT. C.N.R.S. NO 242; GRENOBLE; 1974; PARIS; C.N.R.S.; DA. 1975; PP. 177-185; ABS. FR.; BIBL. 21 REF.Conference Paper

ELECTRIC SUBBANDS IN P-TYPE GERMANIUM INVERSION LAYERSUSCHIDA S; LANDWEHR G; BANGERT E et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 10; PP. 869-872; BIBL. 11 REF.Article

THEORY OF STARK-LADDER CURRENTS.KUEMMEL R; RAUH H; BANGERT E et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 87; NO 1; PP. 99-110; ABS. GER; BIBL. 20 REF.Article

COMMENTS ON THE HOLE MASS IN SILICON INVERSION LAYERS.LANDWEHR G; BANGERT E; VON KLITZING K et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 1031-1035; BIBL. 13 REF.Article

DE HAAS-VAN ALPHEN-TYPE OSCILLATIONS IN THE INTERBAND FARADAY EFFECT OF TELLURIUM.LUTZ M; BANGERT E; MIZRAH T et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 523-532; ABS. ALLEM.; BIBL. 18 REF.Article

Self-consistent calculations of Landau levels for symmetric p-type inversion layersLATUSSEK, V; BANGERT, E; LANDWEHR, G et al.Annalen der Physik (Leipzig). 1991, Vol 48, Num 6, pp 394-414, issn 0003-3804Article

Low-temperature magnetoresistance in medium-angle grain boundaries in germaniumYI-BEN XIA; BANGERT, E; LANDWEHR, G et al.Physica status solidi. B. Basic research. 1987, Vol 144, Num 2, pp 601-608, issn 0370-1972Article

Hole sub-bands on silicon surfacesBAUMGARTNER, M; ABSTREITER, G; BANGERT, E et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 9, pp 1617-1631, issn 0022-3719Article

Radiative recombination of a 3D-electron with a 2D-hole in P-type GaAs/(GaAl)As heterojunctionsOSSAU, W; BANGERT, E; WEIMANN, G et al.Solid state communications. 1987, Vol 64, Num 5, pp 711-715, issn 0038-1098Article

Zeeman levels of shallow acceptors in cubic semiconductorsSCHMITT, W. O. G; BANGERT, E; LANDWEHR, G et al.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 35, pp 6789-6815, issn 0953-8984Article

Magneto-optical investigations of phase-transition-induced band-structure changes of Pb_1-xGe_xTeBANGERT, E; BAUER, G; FANTNER, E. J et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 12, pp 7958-7978, issn 0163-1829Article

Zeeman pattern of semimagnetic (CdMn)Te/(CdMg)Te quantum wells in inplane magnetic fieldsKUHN-HEINRICH, B; OSSAU, W; BANGERT, E et al.Solid state communications. 1994, Vol 91, Num 6, pp 413-418, issn 0038-1098Article

Magneto-optical study of heavy- and light-hole excitons in CdTe/(Cd, Mn)Te single quantum wellsKUHN-HEINRICH, B; POPP, M; OSSAU, W et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1239-1246, issn 0268-1242Article

Influence of warping on quantum oscillations in p-type GaAs-(GaAl)As heterostructuresHEURING, W; BANGERT, E; GROÊTSCH, K et al.Surface science. 1990, Vol 229, Num 1-3, pp 76-79, issn 0039-6028, 4 p.Conference Paper