Choice of electrolyte for doping profiling in Si by electrochemical C-V techniqueBASARAN, E.Applied surface science. 2001, Vol 172, Num 3-4, pp 345-350, issn 0169-4332Article

A comparative study for profiling ultrathin boron layers in siBASARAN, E; ADDEMIR, O; ASIAN, M. H et al.Crystal research and technology (1979). 2003, Vol 38, Num 12, pp 1037-1041, issn 0232-1300, 5 p.Article

Germanium concentration profiling of Si/Ge_xSi_1-x heterostructures by anodic dissolutionBASARAN, E; KUBIAK, R. A; PARRY, C. P et al.Semiconductor science and technology. 1991, Vol 6, Num 12, pp 1175-1177, issn 0268-1242Article

Electrochemical capacitance-voltage depth profiling of heavily boron-doped siliconBASARAN, E; PARRY, C. P; KUBIAK, R. A et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 109-112, issn 0022-0248Conference Paper

Time relaxation of metastable chaotic state in TlInS₂MIKAILOV, F. A; BASARAN, E; SENTÜRK, E et al.Solid state communications. 2002, Vol 122, Num 3-4, pp 161-164, issn 0038-1098Article

Cimetidine therapy for warts : A placebo-controlled, double-blind studyYILMAZ, E; ALPSOY, E; BASARAN, E et al.Journal of the American Academy of Dermatology. 1996, Vol 34, Num 6, pp 1005-1007, issn 0190-9622Article

The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS₂ and TlGaSe₂BABAEV, S. S; BASARAN, E; MAMMADOV, T. G et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 12, pp 1985-1993, issn 0953-8984, 9 p.Article

Luminescence and optical properties of relaxor ferroelectricsZVEREV, D. G; MIGACHEV, S. A; MAMIN, R. F et al.Ferroelectrics (Print). 2005, Vol 314, pp 201-205, issn 0015-0193, 5 p.Article

Bloom's syndrome in a Turkish individualYILMAZ, E; ALPSOY, E; LÜLECI, G et al.Clinical genetics. 1996, Vol 49, Num 6, pp 314-315, issn 0009-9163Article

Epr of some irradiated renal stonesKÖSEOGLU, R; KÖSEOGLU, E; KÖKSAL, F et al.Radiation measurements. 2005, Vol 40, Num 1, pp 65-68, issn 1350-4487, 4 p.Article

Dielectric susceptibility behaviour in the incommensurate phase of TlInS₂MIKAILOV, F. A; BASARAN, E; MAMMADOV, T. G et al.Physica. B, Condensed matter. 2003, Vol 334, Num 1-2, pp 13-20, issn 0921-4526, 8 p.Article

Keratoderma, hypotrichosis and leukonychia totalis : a new syndrom ?BASARAN, E; YILMAZ, E; ALPSOY, E et al.British journal of dermatology (1951). 1995, Vol 133, Num 4, pp 636-638, issn 0007-0963Article

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°CPOWELL, A. R; KUBIAK, R. A. A; WHALL, T. E et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 907-911, issn 0022-0248Conference Paper

Release characteristics of vitamin E incorporated chitosan microspheres and in vitro―in vivo evaluation for topical applicationYENILMEZ, E; BASARAN, E; YAZAN, Y et al.Carbohydrate polymers. 2011, Vol 84, Num 2, pp 807-811, issn 0144-8617, 5 p.Conference Paper

Thermal history and dielectric behavior in the incommensurate phase of TlGaSe₂MIKAILOV, F. A; BASARAN, E; TÜMBEK, L et al.Journal of non-crystalline solids. 2005, Vol 351, Num 33-36, pp 2809-2812, issn 0022-3093, 4 p.Conference Paper

Preparation of c-axis-oriented zinc-oxide thin films and the study of their microstructure and optical propertiesASLAN, M. H; ORAL, A. Y; MENSUR, E et al.Solar energy materials and solar cells. 2004, Vol 82, Num 4, pp 543-552, issn 0927-0248, 10 p.Article

Time relaxation of dielectric constant in the commensurate phase of TlGaSe₂MIKAILOV, F. A; BASARAN, E; SENTÜRK, E et al.Solid state communications. 2004, Vol 129, Num 12, pp 761-764, issn 0038-1098, 4 p.Article

Improper and proper ferroelectric phase transitions in TlInS₂layered crystal with incommensurate structureMIKAILOV, F. A; BASARAN, E; SENTÜRK, E et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 4, pp 727-733, issn 0953-8984Article

FACTORS INFLUENCING TO FORMATION OF TINEA CAPITIS PROFUNDUS KERION CELSIERBAKAN N; NUR OR A; PALALI Z et al.1975; MYKOSEN; DTSCH.; DA. 1975; VOL. 18; NO 1; PP. 35-43; ABS. ALLEM.; BIBL. 28REF.Article