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ISOTOPE SELECTIVE CHEMICAL ACTIVATION OF ETHYLENE BY HIGH POWER I.R. LASER PULSES.BASTIAENS J; DE KEUSTER D; DE HEMPTINNE X et al.1976; BULL. SOC. CHIM. BELGES; BELG.; DA. 1976; VOL. 85; NO 11; PP. 833-845; BIBL. 15 REF.Article

A reconstruction of middle Holocene alluvial hardwood forests (Lower Scheldt River, Northern Belgium) and their exploitation during the Mesolithic-Neolithic transition period (Swifterbant culture, ca. 4,500-4,000 BC)DEFORCE, K; BASTIAENS, J; CROMBÉ, P et al.Quaternaire (Paris). 2014, Vol 25, Num 1, pp 9-21, issn 1142-2904, 13 p.Article

Specific solvent effects of dioxane and N, N, N', N'-tetramethylethylenediamine in the anionic polymerization of styrene with Li+ as counterionBASTIAENS, J; HUYSKENS, P; VAN BEYLEN, M et al.Die Makromolekulare Chemie. Macromolecular symposia. 1998, pp 165-185, issn 0258-0322, isbn 3-527-29800-2Conference Paper

The 256-kbit SRAM: an important step on the way to submicron IC technologyBASTIAENS, J. J. J; GUBBELS, W. C. H.Philips technical review. 1988, Vol 44, Num 2, pp 33-42, issn 0031-7926Article

Differential split-level CMOS logic for subnanosecond speedsPFENNINGS, L. C. M. G; MOL, W. G. J; BASTIAENS, J. J. J et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 5, pp 1050-1055, issn 0018-9200Article

The development of a thin Cr2O3 wear protective coating for the advanced digital recording systemBIJKER, M. D; BASTIAENS, J. J. J; DRAAISMA, E. A et al.Tribology international. 2003, Vol 36, Num 4-6, pp 227-233, issn 0301-679X, 7 p.Conference Paper

A 40-ns/100-pF low-power full-CMOS 256K (32K×8) SRAMGUBBELS, W. C. H; HARTGRING, C. D; SALTERS, R. H. W et al.IEEE journal of solid-state circuits. 1987, Vol 22, Num 5, pp 741-747, issn 0018-9200Article

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