Tracking control of trim trajectories of a blimp for ascent and descent flight manoeuvresBEJI, L; ABICHOU, A.International Journal of Control. 2005, Vol 78, Num 10, pp 706-719, issn 0020-7179, 14 p.Article

A singular perturbation approach for tracking control of a parallel robot including motor dynamicsBEJI, L; ABICHOU, A.International Journal of Control. 1997, Vol 68, Num 4, pp 689-707, issn 0020-7179Article

Electrical investigation of the Au/n⁺―GaAs and Au/n-porous GaAs structuresSAGHROUNI, H; HANNACHI, R; JOMNI, S et al.Physica. B, Condensed matter. 2013, Vol 422, pp 64-71, issn 0921-4526, 8 p.Article

Investigation of porous GaAs layers formed on n⁺-type GaAs by electrochemical anodization in HF solutionBEJI, L; SFAXI, L; BENOUADA, H et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 1, pp 65-71, issn 0031-8965, 7 p.Article

Longitudinal and horizontal stabilisation of an unmanned blimpSAMAALI, S; ABICHOU, A; BEJI, L et al.International journal of vehicle autonomous systems. 2007, Vol 5, Num 1-2, pp 138-157, issn 1471-0226, 20 p.Article

High quality p⁺-n⁺-GaAs tunnel junction diode grown by atmospheric pressure metalorganic vapour phase epitaxyBEJI, L; EL JANI, B; GIBART, P et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 2, pp 273-279, issn 0031-8965Article

Dynamic study of a 6 DOF and three limbs parallel manipulatorBEJI, L; JOLI, P; PASCAL, M et al.CESA'96 IMACS Multiconference : computational engineering in systems applications. 1996, pp 333-338, isbn 2-9510266-1-7Conference Paper

Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrateBEJI, L; BOUZAÏENE, L; ISMAÏL, B et al.Microelectronics journal. 2005, Vol 36, Num 2, pp 99-103, issn 0959-8324, 5 p.Article

Critical layer thickness enhancement of InAs overgrowth on porous GaAsBEJI, L; ISMAÏL, B; SFAXI, L et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 84-88, issn 0022-0248, 5 p.Article

Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solutionBEJI, L; SFAXI, L; ISMAIL, B et al.Microelectronics journal. 2003, Vol 34, Num 10, pp 969-974, issn 0959-8324, 6 p.Article

Co-leaders and a flexible virtual structure based formation motion controlESSGHAIER, A; BEJI, L; EL KAMEL, M. A et al.International journal of vehicle autonomous systems. 2011, Vol 9, Num 1-2, pp 108-125, issn 1471-0226, 18 p.Article

Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurementsHARRABI, Z; JOMNI, S; BEJI, L et al.Physica. B, Condensed matter. 2010, Vol 405, Num 17, pp 3745-3750, issn 0921-4526, 6 p.Article

Study of porous III-V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL) : Effect of ionic bombardment and nitridation processKHALIFA, S. Ben; GRUZZA, B; MAAREF, H et al.Surface science. 2007, Vol 601, Num 18, pp 4531-4535, issn 0039-6028, 5 p.Conference Paper

Optical monitoring of the growth rate reduction by CCl₄ during metalorganic vapour-phase epitaxy deposition of carbon doped GaAsREBEV, A; BEJI, L; EL JANI, B et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 734-739, issn 0022-0248Article

Electrical investigation of the Al/porous Si/p⁺-Si heterojunctionCHERIF, A; JOMNI, S; HANNACHI, R et al.Physica. B, Condensed matter. 2013, Vol 409, pp 10-15, issn 0921-4526, 6 p.Article

Tracking controllers in various navigation planes of an unmanned aerial blimpABICHOU, A; BEJI, L; SAMAALI, S et al.International journal of vehicle autonomous systems. 2011, Vol 9, Num 3-4, pp 297-315, issn 1471-0226, 19 p.Article

In-situ current-voltage characteristics of the n⁺-type GaAs substrate in HF:Et-OH electrolyteBEJI, L; MAZOUZ, Z; OTHMANE, A et al.The Journal of physics and chemistry of solids. 2007, Vol 68, Num 1, pp 36-40, issn 0022-3697, 5 p.Article

Very high silicon concentration by MOVPE in GaAsBEJI, L; CHINE, Z; EL JANI, B et al.Physica status solidi. A. Applied research. 1998, Vol 168, Num 2, pp 453-462, issn 0031-8965Article

Incorporation modes of silicon in GaAs : Si grown by metalorganic vapor phase epitaxyBEJI, L; REBEY, A; EL JANI, B et al.EPJ. Applied physics (Print). 1998, Vol 4, Num 3, pp 269-273, issn 1286-0042Article

Physical and electrical characteristics of metal/Dy₂O₃/p-GaAs structureSAGHROUNI, H; JOMNI, S; BELGACEM, W et al.Physica. B, Condensed matter. 2014, Vol 444, pp 58-64, issn 0921-4526, 7 p.Article

Morphology and optical properties of p-type porous GaAs(1 00) layers made by electrochemical etchingBEN KHALIFA, S; GRUZZA, B; ROBERT-GOUMET, C et al.Journal of luminescence. 2008, Vol 128, Num 10, pp 1611-1616, issn 0022-2313, 6 p.Article

Nanostructurale nature of the porous GaAs layer formed on p⁺-GaAs substrate by electrochemical anodizationBEJI, L; MISSAOUI, A; FOUZRI, A et al.Microelectronics journal. 2006, Vol 37, Num 8, pp 783-785, issn 0959-8324, 3 p.Article

Poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin film spin-coated on porous n-type GaAsBEJI, L; BEN JOMAA, T; LTAEIF, A et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 9, pp 1763-1767, issn 0031-8965, 5 p.Article

Visible photoluminescence in porous GaAs capped by GaAsBEJI, L; SFAXI, L; ISMAIL, B et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 636-642, issn 1386-9477, 7 p.Article