Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo SimulationBERTAZZI, Francesco; BELLOTTI, Enrico; FURNO, Enrico et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1677-1683, issn 0361-5235, 7 p.Conference Paper

Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook : GaN ELECTRONIC DEVICESBELLOTTI, Enrico; BERTAZZI, Francesco; SHISHEHCHI, Sara et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3204-3215, issn 0018-9383, 12 p.Article

Empirical Pseudopotential and Full-Brillouin-Zone k· p Electronic Structure of CdTe, HgTe, and Hg_1-xCd_xTePENNA, Michele; MARNETTO, Alberto; BERTAZZI, Francesco et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1717-1725, issn 0361-5235, 9 p.Conference Paper

First-principles simulation of GaN material and devices: An application to GaN APDsBELLOTTI, Enrico; MORESCO, Michele; BERTAZZI, Francesco et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76021B.1-76021B.9Conference Paper

Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulationFURNO, Enrico; BERTAZZI, Francesco; GOANO, Michele et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1796-1801, issn 0038-1101, 6 p.Article

Full-Band Monte Carlo Simulation of HgCdTe APDsBERTAZZI, Francesco; MORESCO, Michele; PENNA, Michele et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 912-917, issn 0361-5235, 6 p.Conference Paper

Ab initio, nonlocal pseudopotential, and full-zone k · p computation of the electronic structure of wurtzite BeOMARNETTO, Alberto; PENNA, Michele; BERTAZZI, Francesco et al.Optical and quantum electronics. 2009, Vol 40, Num 14-15, pp 1135-1141, issn 0306-8919, 7 p.Conference Paper

Calculation of Auger Lifetimes in HgCdTeBERTAZZI, Francesco; GOANO, Michele; BELLOTTI, Enrico et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1663-1667, issn 0361-5235, 5 p.Conference Paper

Low-frequency noise conversion modeling in RF devices under forced nonlinear operationCONTE, Gabriele; BERTAZZI, Francesco; GUERRIERI, Simona Donati et al.International journal of RF and microwave computer-aided engineering. 2006, Vol 16, Num 1, pp 4-12, 9 p.Conference Paper

Theory of high field carrier transport and impact ionization in ZnOBERTAZZI, Francesco; PENNA, Michele; GOANO, Michele et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 760303.1-760303.10Conference Paper

Electron and hole transport in bulk ZnO : A full band monte carlo studyBERTAZZI, Francesco; GOANO, Michele; BELLOTTI, Enrico et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 857-863, issn 0361-5235, 7 p.Conference Paper

Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devicesBERTAZZI, Francesco; CAPPELLUTI, Federica; GUERRIERI, Simona Donati et al.IEEE transactions on microwave theory and techniques. 2006, Vol 54, Num 4, pp 1611-1618, issn 0018-9480, 8 p., 1Article

A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche PhotodiodesBELLOTTI, Enrico; MORESCO, Michele; BERTAZZI, Francesco et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1651-1656, issn 0361-5235, 6 p.Conference Paper

Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?VALLONE, Marco; GOANO, Michele; BERTAZZI, Francesco et al.Journal of electronic materials. 2014, Vol 43, Num 8, pp 3070-3076, issn 0361-5235, 7 p.Conference Paper