Nanolitografia : un nuovo approccio al controllo delle proprietà dei materiali = Nanolithography : a new approach to the control of material propertiesBISCARINI, F.La Chimica e l'industria (Milano). 2000, Vol 82, Num 3, issn 0009-4315, 252, 307-311 [6 p.]Article

Quantum coherence effects in the scanning tunneling microscope : a simple interpretation of contact resistance experimentsBISCARINI, F; KENKRE, V. M.Surface science. 1999, Vol 426, Num 3, pp 336-344, issn 0039-6028Article

On a simple model of ferroelectricity in liquid crystalsBISCARINI, F; CHICCOLI, C; PASINI, P et al.Journal of non-crystalline solids. 1991, Vol 131-33, pp 1190-1193, issn 0022-3093, 4 p., p.2Conference Paper

Head-tail asymmetry and ferroelectricity in uniaxial liquid crystals : model calculationsBISCARINI, F; ZANNONI, C; CHICCOLI, C et al.Molecular physics (Print). 1991, Vol 73, Num 2, pp 439-461, issn 0026-8976Article

The P₄ model and its orientational phase transitionCHICCOLI, C; PASINI, P; BISCARINI, F et al.Molecular physics (Print). 1988, Vol 65, Num 6, pp 1505-1524, issn 0026-8976Article

Thermal annealing effects on morphology and electrical response in ultrathin film organic transistorsDINELLI, F; MURGIA, M; BISCARINI, F et al.Synthetic metals. 2004, Vol 146, Num 3, pp 373-376, issn 0379-6779, 4 p.Conference Paper

Organic semi-conducting architectures for supramolecular electronicsLECLERE, Ph; SURIN, M; BREDAS, J. L et al.European polymer journal. 2004, Vol 40, Num 5, pp 885-892, issn 0014-3057, 8 p.Conference Paper

Increased field effect mobility from linear to branched thiophene-based polymersDONAT, B. Pépin; PANOZZO, S; VIAL, J.-C et al.Synthetic metals. 2004, Vol 146, Num 3, pp 225-231, issn 0379-6779, 7 p.Conference Paper

Organic FET devices: structure-property relationship in evaporated films of three fluorenone derivativesPORZIO, W; DESTRI, S; PASINI, M et al.Synthetic metals. 2004, Vol 146, Num 3, pp 259-263, issn 0379-6779, 5 p.Conference Paper

In situ electrical characterization of DH4T field-effect transistorsMUCK, T; WAGNER, V; BASS, U et al.Synthetic metals. 2004, Vol 146, Num 3, pp 317-320, issn 0379-6779, 4 p.Conference Paper

Electrical characterization of pentacene thin-film transistors with polymeric gate dielectricPUIGDOLLERS, J; VOZ, C; MARTIN, I et al.Synthetic metals. 2004, Vol 146, Num 3, pp 355-358, issn 0379-6779, 4 p.Conference Paper

Photophysical properties of thin films and solid phase of switchable supermolecular anthracene-based rotaxanesGIRO, G; COCCHI, M; LEIGH, D. A et al.Synthetic metals. 2001, Vol 122, Num 1, pp 63-65, issn 0379-6779Conference Paper

Theoretical framework for the interpretation of STM images of adsorbatesKENKRE, V. M; BISCARINI, F; BUSTAMANTE, C et al.Ultramicroscopy. 1992, Vol 42-44, Num A, pp 122-127, issn 0304-3991Conference Paper

Imaging and Detection of Single Molecule Recognition Events on Organic Semiconductor SurfacesPREINER, J; LOSILLA, N. S; EBNER, A et al.Nano letters (Print). 2009, Vol 9, Num 2, pp 571-575, issn 1530-6984, 5 p.Article

Light-emitting ambipolar organic heterostructure field-effect transistorROST, Constance; KARG, Siegfried; RIESS, Walter et al.Synthetic metals. 2004, Vol 146, Num 3, pp 237-241, issn 0379-6779, 5 p.Conference Paper

STM studies of poly(3-alkylthiophene)s: model systems for plastic electronicsPAYERNE, Renaud; BRUN, Mickael; RANNOU, Patrice et al.Synthetic metals. 2004, Vol 146, Num 3, pp 311-315, issn 0379-6779, 5 p.Conference Paper

Structure-performance relationship in pentacene/Al₂O₃ thin-film transistorsKALB, Wolfgang; LANG, Philippe; MOTTAGHI, Mohamad et al.Synthetic metals. 2004, Vol 146, Num 3, pp 279-282, issn 0379-6779, 4 p.Conference Paper

Tetracene-based organic light-emitting transistors : Optoelectronic properties and electron injection mechanismSANTATO, C; CAPELLI, R; MUCCINI, M et al.Synthetic metals. 2004, Vol 146, Num 3, pp 329-334, issn 0379-6779, 6 p.Conference Paper

Morphology dependent fluorescence in α-sexithienyl thin film at 4.2KLUNEDEI, E; MORETTI, P; MURGIA, M et al.Synthetic metals. 1999, Vol 101, Num 1-3, pp 592-593, issn 0379-6779Conference Paper

Raman and Far Infrared characterization of the simplest Benzylic Amide [2] CatenaneZAMBONI, R; MUCCINI, M; GEBAUER, W et al.Synthetic metals. 1999, Vol 102, Num 1-3, pp 1556-1557, issn 0379-6779Conference Paper

DNA adsorption measured with ultra-thin film organic field effect transistorsSTOLIAR, P; BYSTRENOVA, E; QUIROGA, S. D et al.Biosensors & bioelectronics. 2009, Vol 24, Num 9, pp 2935-2938, issn 0956-5663, 4 p.Article

The effect of water related traps on the reliability of organic based transistorsGOMES, H. L; STALLINGA, P; CÖLLE, M et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1761-1764, issn 0022-3093, 4 p.Conference Paper

Organic Field-Effect Transistors: Towards Molecular Scale. Proceedings of Symposium E, EMRS Spring Meeting 2004, May 24-28, 2004, Strabourg, FranceHOROWITZ, G; BISCARINI, F; VUILLAUME, D et al.Synthetic metals. 2004, Vol 146, Num 3, issn 0379-6779, 172 p.Conference Proceedings

Bottom-up nanofabrication of materials for organic electronicsCAVALLINI, Massimiliano; FACCHINI, Massimo; MASSI, Massimiliano et al.Synthetic metals. 2004, Vol 146, Num 3, pp 283-286, issn 0379-6779, 4 p.Conference Paper

Photoinduced charge transport in polymer field effect transistorsDUTTA, S; NARAYAN, K. S.Synthetic metals. 2004, Vol 146, Num 3, pp 321-324, issn 0379-6779, 4 p.Conference Paper