DIFFUSE X-RAY SCATTERING AND THE STRUCTURE OF OXIDE LAYERS ON REAL GAAS (111) SURFACESGHEZZI C; BOCCHI C.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 88; NO 1; PP. 1-8; BIBL. 6 REF.Article

THE USE OF PARALLEL AND MONOCHROMATIC BEAMS FOR DETERMINING THE COMPOSITION OF PSEUDOBINARY ALLOYS BY X-RAY FLUORESCENCEBOCCHI C; GHEZZI C.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 18; NO 2; PP. 155-163; BIBL. 13 REF.Article

X-RAY DETERMINATION OF THE MEAN-SQUARE VIBRATIONAL AMPLITUDES OF ATOMS IN NEARLY PERFECT CDS CRYSTALS.BOCCHI C; GHEZZI C.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 5; PP. 421-426; BIBL. 20 REF.Article

X-RAY STUDY OF PB_XSN_1-XTE.BOCCHI C; GHEZZI C.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 461-467; ABS. ALLEM.; BIBL. 17 REF.Article

GROWTH CONDITIONS AND MORPHOLOGY OF COBALT TELLURIDE (CO₂TE₃) SINGLE CRYSTALSBOCCHI C; FRANZOSI P; LECCABUE F et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 2; PP. 335-338; BIBL. 4 REF.Article

Quantitative X-ray standing-wave phase analysis by means of photoelectronsMUKHAMEDZHANOV, E. Kh; BOCCHI, C.Journal of applied crystallography. 2000, Vol 33, pp 1430-1433, issn 0021-8898, 6Article

Intrauterine growth retardation and fetal cardiac functionSEVERI, F. M; RIZZO, G; BOCCHI, C et al.Fetal diagnosis and therapy. 2000, Vol 15, Num 1, pp 8-19, issn 1015-3837Article

Neurotransmitters, neuroendocrine correlates of sensation-seeking temperament in normal humansGERRA, G; AVANZINI, P; BRAMBILLA, F et al.Neuropsychobiology. 1999, Vol 39, Num 4, pp 207-213, issn 0302-282XArticle

A study of thin buried layers in III-V compound heterostructures by high-resolution x-ray diffractionBOCCHI, C; FERRARI, C.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4A, pp A164-A168, issn 0022-3727Conference Paper

Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPEATTOLINI, G; BOCCHI, C; GERMINI, F et al.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 246-252, issn 0254-0584Conference Paper

Assessment of Vegard's law validity in the Ga_1-xAl_xSb/GaSb epitaxial systemGERMINI, F; BOCCHI, C; FERRARI, C et al.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 10A, pp A12-A15, issn 0022-3727Article

Vapor phase epitaxy of Hg_1-xCd_xI₂ layers on CdTe substratesSOCHINSKII, N. V; MARIN, C; ROJO, J. C et al.Journal of crystal growth. 1997, Vol 171, Num 3-4, pp 425-432, issn 0022-0248Article

Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffractionBOCCHI, C; FERRARI, C; FRANZOSI, P et al.Journal of crystal growth. 1993, Vol 132, Num 3-4, pp 427-434, issn 0022-0248Article

Structural properties of H-implanted InP crystalsBOCCHI, C; FRANZOSI, P; LAZZARINI, L et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 7, pp 2034-2038, issn 0013-4651Article

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devicesLONGO, M; PARISINI, A; TARRICONE, L et al.Journal of crystal growth. 2009, Vol 311, Num 18, pp 4293-4300, issn 0022-0248, 8 p.Article

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emissionTREVISI, G; SERAVALLI, L; FRIGERI, P et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 465-468, issn 0959-8324, 4 p.Conference Paper

The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructuresPELOSI, C; ATTOLINI, G; BOCCHI, C et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1723-1730, issn 0361-5235Conference Paper

The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructuresTIMO, G; FLORES, C; BOLLANI, B et al.Journal of crystal growth. 1992, Vol 125, Num 3-4, pp 440-448, issn 0022-0248Article

Structural characterization of Hg_O.78Cd_0.22Te/CdTe LPE heterostructures grown from Te solutionsBERNARDI, S; BOCCHI, C; FERRARI, C et al.Journal of crystal growth. 1991, Vol 113, Num 1-2, pp 53-60, issn 0022-0248Article

Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxyBOCCHI, C; FERRARI, C; FRANZOSI, P et al.Journal of crystal growth. 1990, Vol 106, Num 4, pp 665-672, issn 0022-0248Article

Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≈ 0.5) grown by LPE and MOCVDMISHURNYI, V. A; DE ANDA, F; GORBATCHEV, A. Yu et al.Thin solid films. 2008, Vol 516, Num 22, pp 8092-8095, issn 0040-6090, 4 p.Conference Paper

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sourcesBEGOTTI, M; LONGO, M; MAGNANINI, R et al.Applied surface science. 2004, Vol 222, Num 1-4, pp 423-431, issn 0169-4332, 9 p.Article

Abruptio placentae and highest maternal serum activin A levels at mid-gestation: a two cases reportFLORIO, P; SEVERI, F. M; BOCCHI, C et al.Placenta (Eastbourne). 2003, Vol 24, Num 2-3, pp 279-280, issn 0143-4004, 2 p.Article

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAsLONGO, M; MAGNANINI, R; PARISINI, A et al.Journal of crystal growth. 2003, Vol 248, pp 119-123, issn 0022-0248, 5 p.Conference Paper

Damage profiles determination in ultra-shallow B+ implanted Si by triple crystal X-ray diffraction and transmission electron microscopyBOCCHI, C; GERMINI, F; MUKHAMEDZHANOV, E. Kh et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 457-461, issn 0921-5107Conference Paper