Stimulated emission in indirect gap Al_xGa_1-xAsKALT, H; SMIRL, A. L; BOGGESS, T. F et al.Journal of applied physics. 1989, Vol 65, Num 1, pp 294-299, issn 0021-8979Article

A review of optical limiting mechanisms and devices using organics, fullerenes, semiconductors and other materialsTUTT, L. W; BOGGESS, T. F.Progress in quantum electronics. 1993, Vol 17, Num 4, pp 299-338, issn 0079-6727Article

A hybridly mode-locked CW dye laser with brewster prismsDAWSON, M. D; BOGGESS, T. F; GARVEY, D. W et al.Optics communications. 1986, Vol 60, Num 1-2, pp 79-83, issn 0030-4018Article

A hybridly mode-locked CW dye laser with brewster prismsDAWSON, M. D; BOGGESS, T. F; GARVEY, D. W et al.Optics communications. 1986, Vol 60, Num 1-2, pp 79-83, issn 0030-4018Article

Femtosecond synchronously pumped Pyridine dye lasersDAWSON, M. D; BOGGESS, T. F; SMIRL, A. L et al.Optics letters. 1987, Vol 12, Num 4, pp 254-256, issn 0146-9592Article

Picosecond and femtosecond pulse genetation near 1000 nm from a frequency-doubled Nd:YAG-pumped cw dye laserDAWSON, M. D; BOGGESS, T. F; SMIRL, A. L et al.Optics letters. 1987, Vol 12, Num 8, pp 590-592, issn 0146-9592Article

Two-photon absorption and anisotropic transient energy transfer in BaTiO₃ with 1-psec excitationBOGGESS, T. F; WHITE, J. O; VALLEY, G. C et al.Journal of the Optical Society of America. B, Optical physics (Print). 1990, Vol 7, Num 12, pp 2255-2258, issn 0740-3224Article

Performance of 64x64 MWIR Supper lattice Light Emitting Diode (SLED) array for IR scene generationDAS, Naresh C; KIAMILEV, Fouad; PRINEAS, J. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69420I.1-69420I.9, issn 0277-786X, isbn 978-0-8194-7133-8Conference Paper

Room-temperature optical nonlinearities in strained (InAs)₂(GaAs)₅ superlattice quantum wellsMCCALLUM, D. S; HUANG, X. R; BOGGESS, T. F et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 3243-3248, issn 0021-8979, 6 p.Article

Polarization-rotation switch using picosecond pulses in GaAsSMIRL, A. L; DUBARD, J; CUI, A. G et al.Optics letters. 1989, Vol 14, Num 4, pp 242-244, issn 0146-9592Article

Variable intracavity spectral windowing in a synchronously pumped femtosecond cw dye laserDAWSON, M. D; BOGGESS, T. F; GARVEY, D. W et al.Optics letters. 1986, Vol 11, Num 11, pp 721-723, issn 0146-9592Article

Picosecond transient orientational and concentration gratings in germaniumSMIRL, A. L; BOGGESS, T. F; WHERRETT, B. S et al.IEEE journal of quantum electronics. 1983, Vol 19, Num 4, pp 690-700, issn 0018-9197Article

Picosecond damage studies at 0.5 and 1 μmSOILEAU, M. J; WILLIAMS, W. E; VANSTRYLAND, E. W et al.Optical engineering (Bellingham. Print). 1983, Vol 22, Num 4, pp 424-430, issn 0091-3286Article

Picosecond investigations of optical limiting mechanisms in King's complexBOGGESS, T. F; ALLAN, G. R; RYCHNOVSKY, S. J et al.Optical engineering (Bellingham. Print). 1993, Vol 32, Num 5, pp 1063-1067, issn 0091-3286Article

Enhanced ambipolar in-plane transport in an InAs/GaAs hetero-n-i-p-iMCCALLUM, D. S; CARTWRIGHT, A. N; HUANG, X. R et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3860-3866, issn 0021-8979Article

Ambipolar diffusion and carrier lifetime measurements in all-binary (InAs)₂(GaAs)₅ strained quantum wells grown on GaAsHUANG, X. R; MCCALLUM, D. S; DAWSON, M. D et al.Journal of applied physics. 1993, Vol 74, Num 3, pp 1868-1873, issn 0021-8979Article

Renormalization of direct and indirect band gaps in highly excited Al_xGa_1-xAsBOHNERT, K; KALT, H; SMIRL, A. L et al.Physical review letters. 1988, Vol 60, Num 1, pp 37-40, issn 0031-9007Article

Femtosecond pulse generation in the red/deep red spectral regionDAWSON, M. D; BOGGESS, T. F; GARVEY, D. W et al.IEEE journal of quantum electronics. 1987, Vol 23, Num 3, pp 290-292, issn 0018-9197Article

Dynamic picosecond studies of optically excited siliconBOYD, I. W; BOGGESS, T. F; SMIRL, A. L et al.Optica acta. 1986, Vol 33, Num 4, pp 527-534, issn 0030-3909Article

Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlatticesMURRAY, L. M; LOKOVIC, K. S; OLSON, B. V et al.Journal of crystal growth. 2014, Vol 386, pp 194-198, issn 0022-0248, 5 p.Article

The role of InAs thickness on the material properties of InAs/GaSb superlatticesHAUGAN, H. J; BROWN, G. J; SZMULOWICZ, F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8154, issn 0277-786X, isbn 978-0-8194-8764-3, 81540J.1-81540J.8Conference Paper

Optical studies of InAs/GaAs on GaAs short-periog strained-layer superlatticfes grown by MBE and MEEHASENBERG, T. C; MCCALLUM, D. S; HUANG, X. R et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 388-392, issn 0022-0248Conference Paper

Cavity-length detuning effects and stabilization of a synchronously pumped femtosecond linear dye laserDAWSON, M. D; MAXSON, D; BOGGESS, T. F et al.Optics letters. 1988, Vol 13, Num 2, pp 126-128, issn 0146-9592Article

High-accuracy, highy-reflectivity phase conjugation at 1.06 μm by four-wave mixing in photorefractive gallium arsenideKLEIN, M. B; MCCAHON, S. W; BOGGESS, T. F et al.Journal of the Optical Society of America. B, Optical physics (Print). 1988, Vol 5, Num 12, pp 2467-2472, issn 0740-3224Article

Piezoreflectance as a supplement to photoreflectance for nondestructive characterization of GaAs/Al_xGa_1-xAs multiple quantum wellsTOBER, R. L; SMIRL, A. L; BOGGESS, T. F et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4678-4682, issn 0021-8979Article