Non-bulk Si-O bonding at the Si-SiO₂ interfaceBOYD, I. W.Electronics Letters. 1988, Vol 24, Num 17, pp 1062-1063, issn 0013-5194Article

New interpretation of structure of thermally grown silicon dioxideBOYD, I. W.Electronics Letters. 1987, Vol 23, Num 8, pp 411-413, issn 0013-5194Article

A review of laser beam applications for processing siliconBOYD, I. W.Contemporary physics. 1983, Vol 24, Num 5, pp 461-490, issn 0010-7514Article

Thin film growth by pulsed laser depositionBOYD, I. W.Ceramics international. 1996, Vol 22, Num 5, pp 429-434, issn 0272-8842Article

Gynaecomastia in association with calcium antagonsitsBOYD, I. W.Medical journal of Australia. 1994, Vol 161, Num 5, issn 0025-729X, p. 328Article

Deconvolution of the infrared absorption peak of the vibrational stretching mode of silicon dioxide: evidence for structural order?BOYD, I. W.Applied physics letters. 1987, Vol 51, Num 6, pp 418-420, issn 0003-6951Article

ULSI dielectrics : low-temperature silicon dioxidesBOYD, I. W.Materials chemistry and physics. 1995, Vol 41, Num 4, pp 266-274, issn 0254-0584Article

Ozone-induced rapid low temperature oxidation of siliconKAZOR, A; BOYD, I. W.Applied physics letters. 1993, Vol 63, Num 18, pp 2517-2519, issn 0003-6951Article

Laser microfabrication of thin films. IMICHELI, F; BOYD, I. W.Optics and laser technology. 1986, Vol 18, Num 6, pp 313-317, issn 0030-3992Article

Ozone oxidation of siliconKAZOR, A; BOYD, I. W.Electronics Letters. 1993, Vol 29, Num 1, pp 115-116, issn 0013-5194Article

Dual-wavelength temperature measurement of laser-heated siliconOVERTOOM, F; BOYD, I. W.Journal of physics. E. Scientific instruments. 1988, Vol 21, Num 6, pp 550-553, issn 0022-3735Article

Laser microfabrication of thin films: IIIMICHELI, F; BOYD, I. W.Optics and laser technology. 1987, Vol 19, Num 2, pp 75-82, issn 0030-3992Article

Rapid photo-deposition of silicon dioxide films using 172 nm VUV lightBERGONZO, P; BOYD, I. W.Electronics Letters. 1994, Vol 30, Num 7, pp 606-608, issn 0013-5194Article

Low temperature VUV enhanced growth of thin silicon dioxide filmsPATEL, P; BOYD, I. W.Applied surface science. 1990, Vol 46, Num 1-4, pp 352-356, issn 0169-4332, 5 p.Conference Paper

Photon-controlled oxidation of siliconMICHELI, F; BOYD, I. W.Applied physics letters. 1987, Vol 51, Num 15, pp 1149-1151, issn 0003-6951Article

Wavelength dependence of optical oxidation of siliconBOYD, I. W; MICHELI, F.Electronics Letters. 1987, Vol 23, Num 6, pp 298-300, issn 0013-5194Article

Laser microfabrication of thin films. IIMICHELI, F; BOYD, I. W.Optics and laser technology. 1987, Vol 19, Num 1, pp 19-25, issn 0030-3992Article

Low pressure photodeposition of silicon nitride films using a xenon excimer lampBERGONZO, P; BOYD, I. W.Applied physics letters. 1993, Vol 63, Num 13, pp 1757-1759, issn 0003-6951Article

Synthesis of(BiPb)₂Sr₂Ca₂Cu₃O₁₀ superconducting thin films on MgO using a multilayered pulsed laser deposition methodAMIN SAJJADI; BOYD, I. W.Applied physics letters. 1993, Vol 63, Num 24, pp 3373-3375, issn 0003-6951Article

UV assisted growth of 100 Å thick SiO₂ at 550°CKAZOR, A; BOYD, I. W.Electronics Letters. 1991, Vol 27, Num 11, pp 909-911, issn 0013-5194Article

In situ monitoring of laser (induced silicon oxidation)MICHELI, F; BOYD, I. W.Applied physics. A, Solids and surfaces. 1988, Vol 47, Num 3, pp 249-253, issn 0721-7250Article

Direct Si oxidation with fluorine incorporation using an argon excimer VUV sourceYU, J. J; BOYD, I. W.Physica status solidi. A. Applied research. 2005, Vol 202, Num 9, pp R98-R100, issn 0031-8965Article

Strong erbium photoluminescence from erbium-doped silica layers prepared using excimer VUV lampsYU, J. J; BOYD, I. W.Electronics Letters. 2005, Vol 41, Num 16, pp 924-925, issn 0013-5194, 2 p.Article

The Pb-Sr-Y-Ca-Cu-O superconducting system: preparation and characteristicsNAQVI, S. H. H; BOYD, I. W.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 33, Num 2-3, pp 67-74, issn 0921-5107Article

Atmospheric pressure, low temperature (< 500°C) UV/ozone oxidation of siliconNAYAR, V; PATEL, P; BOYD, I. W et al.Electronics Letters. 1990, Vol 26, Num 3, pp 205-206, issn 0013-5194, 2 p.Article