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Charge injection in conjugated polymers in semiconductor device structuresFRIEND, R. H; BURROUGHES, J. H.Faraday discussions of the Chemical Society. 1989, Num 88, pp 213-222, issn 0301-7249, 10 p.Conference Paper

New semiconductor device physics in polymer diodes and transistorsBURROUGHES, J. H; JONES, C. A; FRIEND, R. H et al.Nature (London). 1988, Vol 335, Num 6186, pp 137-141, issn 0028-0836Article

Field-enhanced conductivity in polyacetylene-construction of a field-effect transistorBURROUGHES, J. H; FRIEND, R. H; ALLEN, P. C et al.Journal of physics. D, Applied physics (Print). 1989, Vol 22, Num 7, pp 956-958, issn 0022-3727, 3 p.Article

Molecular-scale interface engineering for polymer light-emitting diodesHO, P. K. H; KIM, J.-S; BURROUGHES, J. H et al.Nature (London). 2000, Vol 404, Num 6777, pp 481-484, issn 0028-0836Article

Far-infrared study of a quasi-one-dimensional electron gas formed on (100) GaAs with hole gas sidegates on a (311)A GaAs substrateCINA, S; ARNONE, D. D; BURKE, T et al.Microelectronic engineering. 1998, Vol 43-44, pp 431-436, issn 0167-9317Conference Paper

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Electroluminescence from multilayer conjugated polymer devices : spatial control of exciton formation and emissionBROWN, A. R; GREENHAM, N. C; BURROUGHES, J. H et al.Chemical physics letters. 1992, Vol 200, Num 1-2, pp 46-54, issn 0009-2614Article

Light emission from poly(P-phenylene vinylene) : a comparison between photo- and electro-luminescenceBRADLEY, D. D. C; BROWN, A. R; BURN, P. L et al.Synthetic metals. 1991, Vol 43, Num 1-2, pp 3135-3141, issn 0379-6779Conference Paper

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Hydrogen radical surface cleaning of GaAs for MBE regrowthBURKE, T. M; LINFIELD, E. H; RITCHIE, D. A et al.Journal of crystal growth. 1997, Vol 175-76, pp 416-421, issn 0022-0248, 1Conference Paper

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Hydrogen radical cleaning and low energy electron stimulated desorption of surface contaminants for MBE regrowth of GaAsBURKE, T. M; BROWN, S. J; SMITH, M. P et al.Applied surface science. 1998, Vol 123-24, pp 308-312, issn 0169-4332Conference Paper

Electron transport in a non-planar 2DEGLEADBEATER, M. L; FODEN, C. L; BURROUGHES, J. H et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 587-590, issn 0039-6028Conference Paper

Quantum magnetic confinement in a curved two-dimensional electron gasFODEN, C. L; LEADBEATER, M. L; BURROUGHES, J. H et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 10, pp L127-L134, issn 0953-8984Article

The frequency behavior of InGaAs/AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applicationsBURROUGHES, J. H; MILSHTEIN, M. S; PETTIT, G. D et al.IEEE photonics technology letters. 1992, Vol 4, Num 2, pp 163-166Article

The influence of LiF thickness on the built-in potential of blue polymer light-emitting diodes with LiF/Al cathodesBROWN, T. M; MILLARD, I. S; LACEY, D. J et al.Synthetic metals. 2001, Vol 124, Num 1, pp 15-17, issn 0379-6779Conference Paper

Mobility (10⁶ cm² V^-1 s^-1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfacesBURKE, T. M; RITCHIE, D. A; LINFIELD, E. H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 202-206, issn 0921-5107Conference Paper

Electronic properties of a one-dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAsBURROUGHES, J. H; LEADBEATER, M. L; GRIMSHAW, M. P et al.Applied physics letters. 1993, Vol 63, Num 16, pp 2219-2221, issn 0003-6951Article

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A novel RGB multicolor light-emitting polymer displayKOBAYASHI, H; KANBE, S; FRIEND, R. H et al.Synthetic metals. 2000, Vol 111-12, pp 125-128, issn 0379-6779Conference Paper