Proceedings of the European Materials Research Society 2001-Symposium F Amorphous and Crystalline Silicon Carbide: Material and ApplicationsCALCAGNO, Lucia; HALLEN, Anders; MARTINS, Rodrigo et al.Applied surface science. 2001, Vol 184, Num 1-4, issn 0169-4332, 516 p.Conference Proceedings

Writing cobalt FIB implantation into 6H:SiCBISCHOFF, L; TEICHERT, J.Applied surface science. 2001, Vol 184, Num 1-4, pp 336-339, issn 0169-4332Conference Paper

Correlations between properties and applications of the CVD amorphous silicon carbide filmsKLEPS, Irina; ANGELESCU, Anca.Applied surface science. 2001, Vol 184, Num 1-4, pp 107-112, issn 0169-4332Conference Paper

Laser crystallization of amorphous SiC thin films on glassURBAN, S; FALK, F.Applied surface science. 2001, Vol 184, Num 1-4, pp 356-361, issn 0169-4332Conference Paper

Amorphous silicon-carbon alloys: a promising but complex and very diversified series of materialsSOLOMON, I.Applied surface science. 2001, Vol 184, Num 1-4, pp 3-7, issn 0169-4332Conference Paper

Silicon carbide: from amorphous to crystalline materialFOTI, G.Applied surface science. 2001, Vol 184, Num 1-4, pp 20-26, issn 0169-4332Conference Paper

Contact formation in SiC devicesPECZ, B.Applied surface science. 2001, Vol 184, Num 1-4, pp 287-294, issn 0169-4332Conference Paper

C adsorption and diffusion at the Si(0 0 1) surface: implications for SiC growthCICERO, Giancarlo; CATELLANI, Alessandra.Applied surface science. 2001, Vol 184, Num 1-4, pp 113-117, issn 0169-4332Conference Paper

A modified oxidation procedure for ion-implanted silicon carbide devices annealed at low temperaturesCAPANO, M. A.Applied surface science. 2001, Vol 184, Num 1-4, pp 317-322, issn 0169-4332Conference Paper

Growth of silicon carbide: process-related defectsYAKIMOVA, R; SYVÄJARVI, M; IAKIMOV, T et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 27-36, issn 0169-4332Conference Paper

MBE growth and properties of SiC multi-quantum well structuresFISSEL, A; KAISER, U; SCHRÖTER, B et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 37-42, issn 0169-4332Conference Paper

Heteroepitaxy of 3C-SiC by electron cyclotron resonance-CVD techniqueMANDRACCI, P; CHIODONI, A; CICERO, G et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 43-49, issn 0169-4332Conference Paper

Formation of intermediate SiCN interlayer during deposition of CN_x on a-Si:H or a-SiC:H thin filmsMITU, B; DINESCU, G; BUDIANU, E et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 96-100, issn 0169-4332Conference Paper

A Monte Carlo study of low field transport in Al-doped 4H-SiCMARTINEZ, A; LINDEFELT, U; HJELM, M et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 173-177, issn 0169-4332Conference Paper

Electron irradiation induced defects in monocrystalline 4H-SiC and 6H-SiC: the influence of the electron energy and dopingVON BARDELEBEN, H. J; CANTIN, J. L.Applied surface science. 2001, Vol 184, Num 1-4, pp 237-241, issn 0169-4332Conference Paper

Behavior of background impurities in thick 4H-SiC epitaxial layersKAKANAKOVA-GEORGIEVA, A; YAKIMOVA, R; SYVÄJÄRVI, M et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 242-246, issn 0169-4332Conference Paper

Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substratesLEBEDEV, A. A; STREL'CHUK, A. M; DAVYDOV, D. V et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 419-424, issn 0169-4332Conference Paper

Progress towards SiC productsHARRIS, C. I; SAVAGE, S; KONSTANTINOV, A et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 393-398, issn 0169-4332Conference Paper

Peculiarities of preparing a-SiC:H films from methyltrichlorosilaneRUSAKOV, G. V; IVASHCHENKO, L. A; IVASHCHENKO, V. I et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 128-134, issn 0169-4332Conference Paper

Non-Rutherford backscattering studies of SiC/SIMOX structuresCHEN, K. W; YU, Y. H; ZOU, S. C et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 178-182, issn 0169-4332Conference Paper

Particle and light-induced luminescence degradation in a-SiC:HREITANO, R; BAERI, A; MUSUMECI, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 190-193, issn 0169-4332Conference Paper

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiCHJELM, Mats; BERTILSSON, Kent; NILSSON, Hans-Erik et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 194-198, issn 0169-4332Conference Paper

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layersABERG, D; HALLEN, A; PELLEGRINO, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 263-267, issn 0169-4332Conference Paper

Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layersKALININA, E; KHOLUJANOV, G; IVANNIKOV, P et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 323-329, issn 0169-4332Conference Paper

Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealingsOTTAVIANI, L; LAZAR, M; LOCATELLI, M. L et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 330-335, issn 0169-4332Conference Paper