What style is it?POPPELIERS J; CHAMBERS S. A; SCHWARTZ N. B et al.Historical Preservation. 1976, Vol 28, Num 3, pp 34-43Article

What style is it?POPPELIERS J; CHAMBERS S. A; SCHWARTZ N. B et al.Historical Preservation. 1976, Vol 28, Num 2, pp 10-19Article

Surface reconstruction geometry of GaAs(001)-c(2×8)/(2×4) by high angular resolution X-ray photoelectron diffractionCHAMBERS, S. A.Surface science. 1992, Vol 261, Num 1-3, pp 48-56, issn 0039-6028Article

Epitaxial film crystallography by high-energy. Auger and X-ray photoelectron diffractionCHAMBERS, S. A.Advances in Physics. 1991, Vol 40, Num 4, pp 357-415, issn 0001-8732Article

Surface termination of epitaxial NiAl on GaAs(001) by high-angular-resolution x-ray photoelectron diffractionCHAMBERS, S. A.Physical review. B, Condensed matter. 1990, Vol 42, Num 17, pp 10865-10872, issn 0163-1829, 8 p.Article

Surface dimer formation on GaAS(001)-c(2x8)/(2x4) studied by X-ray photoelectron diffractionCHAMBERS, S. A.Surface science. 1991, Vol 248, Num 3, pp L274-L278, issn 0039-6028Article

Epitaxial growth and properties of thin film oxidesCHAMBERS, S. A.Surface science reports. 2000, Vol 39, Num 5-6, pp 105-180, issn 0167-5729Article

MBE growth and characterization of epitaxial TiO₂ and Nb-doped TiO₂ filmsGAO, Y; CHAMBERS, S. A.Materials letters (General ed.). 1996, Vol 26, Num 4-5, pp 217-221, issn 0167-577XArticle

Growth of β-MnO₂ films on TiO₂(110) by oxygen plasma assisted molecular beam epitaxyCHAMBERS, S. A; LIANG, Y.Surface science. 1999, Vol 420, Num 2-3, pp 123-133, issn 0039-6028Article

Schottky barrier height control at epitaxial NiAl/GaAs(001) interfaces by means of variable band gap interlayersCHAMBERS, S. A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 860-868, issn 0734-2101, 1Conference Paper

The potential for competitive and healthy food chains of benefit to the countrysideTRAILL, W. B; ARNOULT, M. H. P; CHAMBERS, S. A et al.Trends in food science & technology (Regular ed.). 2008, Vol 19, Num 5, pp 248-254, issn 0924-2244, 7 p.Article

Oxide Dilute Magnetic Semiconductors : Fact or Fiction?COEY, J. M. D; CHAMBERS, S. A.MRS bulletin. 2008, Vol 33, Num 11, pp 1053-1058, issn 0883-7694, 6 p.Article

Surface structure of MBE-grown Fe₃O₄(001) by X-ray photoelectron diffraction and scanning tunneling microscopyCHAMBERS, S. A; THEVUTHASAN, S; JOYCE, S. A et al.Surface science. 2000, Vol 450, Num 1-2, pp L273-L279, issn 0039-6028Article

Interaction of D₂O with CeO₂(001) investigated by temperature-programmed desorption and X-ray photoelectron spectroscopyHERMAN, G. S; KIM, Y. J; CHAMBERS, S. A et al.Langmuir. 1999, Vol 15, Num 11, pp 3993-3997, issn 0743-7463Article

Effects of microprojectile bombardment on embryogenic suspension cell cultures of maize (Zea mays L.) used for genetic transformationKAUSCH, A. P; ADAMS, T. R; WILLIAMS, G et al.Planta. 1995, Vol 196, Num 3, pp 501-509, issn 0032-0935Article

Auger and X-ray photoelectron diffraction in MgO(001)TRAN, T. T; CHAMBERS, S. A.Applied surface science. 1994, Vol 81, Num 2, pp 161-173, issn 0169-4332Article

Epitaxial growth of MgO on lattice-matched Cr_xMo_1-x(001)CHAMBERS, S. A; TRAN, T. T; HILEMAN, T. A et al.Surface science. 1994, Vol 320, Num 3, pp L81-L88, issn 0039-6028Article

X-Ray-photoelectron-diffraction investigation of strain at the Si/Ge (001) interfaceCHAMBERS, S. A; LOEBS, V. A.Physical review letters. 1989, Vol 63, Num 6, pp 640-643, issn 0031-9007, 4 p.Article

Medium-energy backscattered electron diffraction as a probe of elastic strain in epitaxial overlayers = Diffraction d'électrons rétrodiffusés d'énergie moyenne comme une sonde de contrainte élastique dans les revêtements épitaxiquesCHAMBERS, S. A; VITOMIROV, I. M; ANDERSON, S. B et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 5, pp 2490-2493, issn 0163-1829Article

Surface structural determination of metal-semiconductor interfaces by angle-resolved Auger electron emission = Détermination de structure de surface des interfaces métal-semiconducteur par émission électronique Auger à résolution angulaireCHAMBERS, S. A; ANDERSON, S. B; WEAVER, J. H et al.Applied surface science. 1986, Vol 26, Num 4, pp 542-549, issn 0169-4332Conference Paper

Microstructure and dynamic behavior of terpolymers of SO₂, But-1-ene, and But-2-eneCHAMBERS, S. A; FAWCETT, A. H.Macromolecules. 1985, Vol 18, Num 9, pp 1710-1713, issn 0024-9297Article

Enrichment of transcribed and newly replicated DNA in soluble chromatin released from nuclei by mild micrococcal nuclease digestionCHAMBERS, S. A; RILL, R. L.Biochimica et biophysica acta. 1984, Vol 782, Num 2, pp 202-209, issn 0006-3002Article

In-situ imaging of the nucleation and growth of epitaxial anatase TiO₂(001) films on SrTiO₃(001)DU, Y; KIM, D. J; KASPAR, T. C et al.Surface science. 2012, Vol 606, Num 17-18, pp 1443-1449, issn 0039-6028, 7 p.Article

Cation mixing, band offsets and electric fields at LaAlO₃/SrTiO₃(001) heterojunctions with variable La:Al atom ratioQIAO, L; DROUBAY, T. C; KASPAR, T. C et al.Surface science. 2011, Vol 605, Num 15-16, pp 1381-1387, issn 0039-6028, 7 p.Article

Band offsets at the epitaxial anatase TiO₂/n-SrTiO₃(001) interfaceCHAMBERS, S. A; OHSAWA, T; WANG, C. M et al.Surface science. 2009, Vol 603, Num 5, pp 771-780, issn 0039-6028, 10 p.Article