au.\*:("CHANGZHI GU")
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The preparation and properties of nanostructured diamond films deposited by a hot-filament chemical vapor deposition method via continuous ion bombardmentWEI LIU; CHANGZHI GU.Thin solid films. 2004, Vol 467, Num 1-2, pp 4-9, issn 0040-6090, 6 p.Article
Local field emission from individual vertical carbon nanofibers grown on tungsten filamentHAIJUN LI; JUNJIE LI; CHANGZHI GU et al.Carbon (New York, NY). 2005, Vol 43, Num 4, pp 849-853, issn 0008-6223, 5 p.Article
On the fabrication and mechanism of pinecone surface structuresQIANQING JIANG; WUXIA LI; JIAJIA MU et al.Microelectronic engineering. 2014, Vol 129, pp 58-64, issn 0167-9317, 7 p.Article
First-principles study of oxygenated diamond (001) surfaces with and without hydrogenHONGXIN YANG; LIFANG XU; CHANGZHI GU et al.Applied surface science. 2007, Vol 253, Num 9, pp 4260-4266, issn 0169-4332, 7 p.Article
Hollow metallic pyramid plasmonic structures fabricated by direct laser writing and electron beam evaporation : Nanofabrication 2012JIAJIA MU; JIAFANG LI; WUXIA LI et al.Microelectronic engineering. 2013, Vol 110, pp 307-310, issn 0167-9317, 4 p.Conference Paper
Controllable three dimensional deformation of platinum nanopillars by focused-ion-beam irradiationAJUAN CUI; WUXIA LI; QIANG LUO et al.Microelectronic engineering. 2012, Vol 98, pp 409-413, issn 0167-9317, 5 p.Conference Paper
Peculiarities of Fe-Ni alloy crystallization and stability inside C nanotubes as derived through electron microscopyGOLBERG, Dmitri; CHANGZHI GU; BANDO, Yoshio et al.Acta materialia. 2005, Vol 53, Num 5, pp 1583-1593, issn 1359-6454, 11 p.Article
Highly efficient field emission from nanodiamond films treated by fast reactive ion etching processSHIBING TIAN; YUNLONG LI; XIAOXIANG XIA et al.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 10, pp 1902-1905, issn 1386-9477, 4 p.Article
Atomic resolution top-down nanofabrication with low-current focused-ion-beam thinningWUXIA LI; AJUAN CUI; CHANGZHI GU et al.Microelectronic engineering. 2012, Vol 98, pp 301-304, issn 0167-9317, 4 p.Conference Paper
Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect TransistorWANGYANG FU; ZHI XU; XUEDONG BAI et al.Nano letters (Print). 2009, Vol 9, Num 3, pp 921-925, issn 1530-6984, 5 p.Article
Fluorination and electrical conductivity of BN nanotubesCHENGCHUN TANG; BANDO, Yoshio; YANG HUANG et al.Journal of the American Chemical Society. 2005, Vol 127, Num 18, pp 6552-6553, issn 0002-7863, 2 p.Article
A measuring system for mechanical characterization of thin films based on a compact in situ micro-tensile tester and SEM moire methodYANJIE LI; MINJIN TANG; HUIMIN XIE et al.Journal of micromechanics and microengineering (Print). 2013, Vol 23, Num 8, issn 0960-1317, 085021.1-085021.7Article
Alkanethiol-functionalized terahertz metamaterial as label-free, highly-sensitive and specific biosensorXIAOJUN WU; BAOGANG QUAN; XUECONG PAN et al.Biosensors & bioelectronics. 2013, Vol 42, pp 626-631, issn 0956-5663, 6 p.Article
Low-energy electron-beam lithography of hydrogen silsesquioxaneHAIFANG YANG; AIZI JIN; QIANG LUO et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 788-791, issn 0167-9317, 4 p.Conference Paper
Effect of inhomogeneity and plasmons on terahertz radiation from GaAs (100) surface coated with rough Au filmXIAOJUN WU; BAOGANG QUAN; XINLONGXU et al.Applied surface science. 2013, Vol 285, pp 853-857, issn 0169-4332, 5 p., bArticle
A polarization insensitive and wide-angle dual-band nearly perfect absorber in the infrared regimeHUA CHENG; SHUQI CHEN; HAIFANG YANG et al.Journal of optics (Print). 2012, Vol 14, Num 8, issn 2040-8978, 085102.1-085102.5Article
Dual-gate field effect transistor based on ZnO nanowire with high-K gate dielectricsZONGNI YAO; WEIJIE SUN; WUXIA LI et al.Microelectronic engineering. 2012, Vol 98, pp 343-346, issn 0167-9317, 4 p.Conference Paper
High-sensitivity phthalocyanine LB film gas sensor based on field effect transistorsCHANGZHI GU; LIANGYAN SUN; TONG ZHANG et al.Thin solid films. 1998, Vol 327-29, pp 383-386, issn 0040-6090Conference Paper
Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B PhotodetectorsYAONAN HOU; ZENGXIA MEI; HUILI LIANG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3474-3477, issn 0018-9383, 4 p.Article
Fabrication of ultrasmooth complementary split ring resonators by an improved template stripping method on SU-8ZHE LIU; XIAOXIANG XIA; HAIFANG YANG et al.Microelectronic engineering. 2012, Vol 98, pp 363-366, issn 0167-9317, 4 p.Conference Paper
The preparation of (001) textured diamond films with large areasCHANGZHI GU; YUE SUN; XIANYI LU et al.Surface & coatings technology. 2001, Vol 142-44, pp 698-701, issn 0257-8972Conference Paper
The deposition of diamond film with high thermal conductivityCHANGZHI GU; ZENGSUN JIN; XIANYI LU et al.Thin solid films. 1997, Vol 311, Num 1-2, pp 124-127, issn 0040-6090Article
Field emission from ZnO nanostructures with different morphologiesHONG JIN; YUNLONG LI; JUNJIE LI et al.Microelectronic engineering. 2009, Vol 86, Num 4-6, pp 1159-1161, issn 0167-9317, 3 p.Conference Paper
Growth of (100) orientation diamond film deposited by MWPCVD methods using the gaseous mixtures of CH4, CO and H21CHANGZHI GU; ZENGSUN JIN; CHUNLEI WANG et al.Diamond and related materials. 1998, Vol 7, Num 6, pp 765-768, issn 0925-9635Conference Paper
Deformation analysis in microstructures and micro-devicesZHANWEI LIU; HUIMIN XIE; DAINING FANG et al.Microelectronics and reliability. 2007, Vol 47, Num 12, pp 2226-2230, issn 0026-2714, 5 p.Article