au.\*:("CHAO, P. C")
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9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substratesCHU, K. K; CHAO, P. C; BRANDES, G. R et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 596-598, issn 0741-3106, 3 p.Article
60 GHz low-noise high-electron-mobility transistorsDUH, K. H. G; CHAO, P. C; SMITH, P. M et al.Electronics Letters. 1986, Vol 22, Num 12, pp 647-649, issn 0013-5194Article
Channel-length effects in quarter-micrometer gate-length GaAs MESFET'sCHAO, P. C; SMITH, P. M; WANUGA, S et al.IEEE electron device letters. 1983, Vol 4, Num 9, pp 326-328, issn 0741-3106Article
Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain PerformanceDONG XU; KONG, Wendell M. T; SCHMANSKI, B et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 4-7, issn 0741-3106, 4 p.Article
Extremely high gain 0•15μm gate-length InAlAs/InGaAs/InP HEMTsHO, P; KAO, M. Y; CHAO, P. C et al.Electronics Letters. 1991, Vol 27, Num 4, pp 325-327, issn 0013-5194, 3 p.Article
Ka-band high power pseudomorphic heterostructure FETSMITH, P. M; LESTER, L. F; FERGUSON, D. W et al.Electronics Letters. 1989, Vol 25, Num 10, pp 639-640, issn 0013-5194, 2 p.Article
Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesAKSUN, M. I; MORKOC, H; LESTER, L. F et al.Applied physics letters. 1986, Vol 49, Num 24, pp 1654-1655, issn 0003-6951Article
Millimeter-wave low-noise high electron mobility transistorsCHAO, P. C; PALMATEER, S. C; SMITH, P. M et al.IEEE electron device letters. 1985, Vol 6, Num 10, pp 531-533, issn 0741-3106Article
Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave ApplicationsDONG XU; XIAOPING YANG; DUH, K. H. George et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 5, pp 1408-1417, issn 0018-9383, 10 p.Article
Stable high power GaN-ON-GaN hemtCHU, K. K; CHAO, P. C; WINDYKA, J. A et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 114-120, isbn 981-256-196-X, 1Vol, 7 p.Conference Paper
Electron transport in 0.15-μm gate In0.52Al0.48As/In0.53Ga0.47As HEMTZHAO, Y; TSUI, D. C; CHAO, P. C et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 6, pp 1067-1070, issn 0018-9383Article
94 GHz low-noise HEMTCHAO, P. C; DUH, K. H. G; HO, P et al.Electronics Letters. 1989, Vol 25, Num 8, pp 504-505, issn 0013-5194, 2 p.Article
Ultra-low-noise characteristics of millimeter-wave high electron mobility transistorsDUH, K.-H. G; LIU, S. M. J; LESTER, L. F et al.IEEE electron device letters. 1988, Vol 9, Num 10, pp 521-523, issn 0741-3106Article
94 GHz transistor amplification using an HEMTSMITH, P. M; CHAO, P. C; DUH, JK. H. G et al.Electronics Letters. 1986, Vol 22, Num 15, pp 780-781, issn 0013-5194Article
W-band MHEMT MMIC LNAHWANG, K. C; CHAO, P. C; P.HOFF et al.SPIE proceedings series. 1999, pp 92-99, isbn 0-8194-3454-XConference Paper
High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrateTU, D.-W; WANG, S; LIU, J. S. M et al.IEEE microwave and guided wave letters. 1999, Vol 9, Num 11, pp 458-460, issn 1051-8207Article
HEMT degradation in hydrogen gasCHAO, P. C; KAO, M. Y; NORDHEDEN, K et al.IEEE electron device letters. 1994, Vol 15, Num 5, pp 151-153, issn 0741-3106Article
High performance heterojunction bipolar transistors grown by molecular-beam epitaxy using model growth methodCHIN, A; LI-WU CHANG; MARTIN, P. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 972-975, issn 1071-1023Conference Paper
Ku-band high efficiency high gain pseudomorphic HEMTSMITH, P. M; KOPP, W. F; HO, P et al.Electronics Letters. 1991, Vol 27, Num 3, pp 270-271, issn 0013-5194, 2 p.Article
Low-frequency noise behavior of 0.15-μm gate-length lattice-matched and lattice-mismatched MODFET's on InP substratesTHURAIRAJ, M. S; DAS, M. B; BALLINGALL, J. M et al.IEEE electron device letters. 1991, Vol 12, Num 8, pp 410-412, issn 0741-3106Article
Microwave performance of 0.25 μm gate length high electron mobility transistorsMISHRA, U. K; PALMATEER, S. C; CHAO, P. C et al.IEEE electron device letters. 1985, Vol 6, Num 3, pp 142-146, issn 0741-3106Article
Progress in GaN Devices Performances and ReliabilitySAUNIER, P; LEE, C; SOUZIS, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941I.1-68941I.10, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper
Dry etching of via connections for InP power devicesCONSTANTINE, C; BARRATT, C; PEARTON, S. J et al.Electronics Letters. 1993, Vol 29, Num 11, pp 984-986, issn 0013-5194Article
Pseudomorphic InGaAs high electron mobility transistorsBALLINGALL, J. M; MARTIN, P. A; MAZUROWSKI, J et al.Thin solid films. 1993, Vol 231, Num 1-2, pp 95-106, issn 0040-6090Article
