The influence of various MOCVD parameters on the growth of Al_1-xIn_xN ternary alloy on GaN templatesKIM-CHAUVEAU, H; DE MIERRY, P; CHAUVEAU, J.-M et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 30-36, issn 0022-0248, 7 p.Article

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article

Anesthésie et chirurgie endonasale sous guidage endoscopique = Endoscopical endonasal anesthesia and surgeryKLOSSEK, J.-M; BAUDOIN, D; CHAUVEAU, J.-M et al.Les Cahiers d'oto-rhino-laryngologie, de chirurgie cervico-faciale et d'audiophonologie. 1989, Vol 24, Num 8, pp 597-599, issn 0395-3971, 3 p.Article

Non-polar α-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxyCHAUVEAU, J.-M; LAÜGT, M; VENNEGUES, P et al.Semiconductor science and technology. 2008, Vol 23, Num 3, issn 0268-1242, 035005.1-035005.7Article

Nitrogen-dependent optimum annealing temperature of Ga(As, N)MUSSLER, G; CHAUVEAU, J.-M; TRAMPERT, A et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 60-66, issn 0022-0248, 7 p.Article

Traumatic cutaneous and sub-cutaneous nocardiosis without dissemination in a patient with AIDSLOWENSTEIN, W; FADLALLAH, J.-P; BOUTIN, L et al.Annales de médecine interne (Paris). 1993, Vol 144, Num 7, pp 461-462, issn 0003-410XArticle

Growth optimization and characterization of lattice-matched Al_0.82In_0.18N optical confinement layer for edge emitting nitride laser diodesKIM-CHAUVEAU, H; FRAYSSINET, E; CHARASH, R et al.Journal of crystal growth. 2012, Vol 338, Num 1, pp 20-29, issn 0022-0248, 10 p.Article

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAsCORDIER, Y; LORENZINI, P; CHAUVEAU, J.-M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 822-826, issn 0022-0248, 5 p.Conference Paper

Optimisation de la croissance par EJM de couches tampons AIInAs relaxees pour TEGFETs metamorphiques sur substrat GaAs = Growth optimization by molecular beam epitaxy AIInAs buffer layer relaxed for metamorphic TEGFETson GaAs substratesCORDIER, Y; ZAKNOUNE, M; BOLLAERT, S et al.Journées nationales de microélectronique et optoélectronique. 1999, 2Vol, 2 p.Conference Paper

La chirurgie endonasale sous guidage endoscopique: concepts actuels = Endoscopic endonasal surgery: up to date conceptsKLOSSEK, J.-M; CHAUVEAU, J.-M; DE LARRARD, J et al.Les Cahiers d'oto-rhino-laryngologie, de chirurgie cervico-faciale et d'audiophonologie. 1989, Vol 24, Num 8, pp 602-607, issn 0395-3971, 6 p.Article

(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire : Polar vs. non-polarCHAUVEAU, J.-M; MORHAIN, C; TEISSEIRE, M et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 512-516, issn 0959-8324, 5 p.Conference Paper

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures : ZnO and Related CompoundsCHAUVEAU, J.-M; MORHAIN, C; LO, B et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 65-69, issn 0947-8396, 5 p.Article

Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxyCHAUVEAU, J.-M; BUELL, D. A; LAÜGT, M et al.Journal of crystal growth. 2007, Vol 301-302, pp 366-369, issn 0022-0248, 4 p.Conference Paper

Correlations between structural and optical properties of GaInNAs quantum wells grown by MBECHAUVEAU, J.-M; TRAMPERT, A; PINAULT, M.-A et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 383-387, issn 0022-0248, 5 p.Conference Paper

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsCORDIER, Y; FERRE, D; CHAUVEAU, J.-M et al.Applied surface science. 2000, Vol 166, pp 442-445, issn 0169-4332Conference Paper

Les nombres flous gaussiensCHAUVEAU, J. M.1995, 53 p.Book

La gestion des données imprécises. Régression floue et analyse de risqueCHAUVEAU, J. M.1997, 71 p.Book

Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performanceCORDIER, Y; BOLLAERT, S; ZAKNOUNE, M et al.III-V semiconductor heterostructures : physics and devices. 2003, pp 111-137, isbn 81-7736-170-8, 27 p.Book Chapter

Syndrome de manque chez deux toxicomanes après injection intraveineuse de buprénorphine ? = Withdrawal syndrome in two drug abusers after intravenous injection of buprenorphine ?GOURARIER, L; LOWENSTEIN, W; GISSELBRECHT, M et al.La Presse médicale (1983). 1996, Vol 25, Num 27, pp 1239-1240, issn 0755-4982Article

Exploration et chirurgie de la pathologie du méat moyen sous guidage endoscopique = Exploration and surgery in the pathology of the middle meatus under endoscopic controlKLOSSEK, J. M; FONTANEL, J. P; CHAUVEAU, J. M et al.Annales d'oto-laryngologie et de chirurgie cervico-faciale. 1989, Vol 106, Num 7, pp 510-514, issn 0003-438XConference Paper

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodesULLOA, J. M; HIERRO, A; MIGUEL-SANCHEZ, J et al.Semiconductor science and technology. 2006, Vol 21, Num 8, pp 1047-1052, issn 0268-1242, 6 p.Article

Tomodensitométrie et surveillance de la chirurgie otologique = Computed tomography and otological surgeryKLOSSEK, J. M; FEGER, B; AZAIS, O et al.Journal français d'oto-rhino-laryngologie (1977). 1990, Vol 39, Num 3, pp 149-151, issn 0398-9771Article