Memristive operations demonstrated by gap-type atomic switchesHASEGAWA, Tsuyoshi; NAYAK, Alpana; OHNO, Takeo et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 811-815, issn 0947-8396, 5 p.Article

Intrinsic resistive switching and memory effects in silicon oxideJUN YAO; LIN ZHONG; NATELSON, Douglas et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 835-839, issn 0947-8396, 5 p.Article

Nanoscale resistive switches: devices, fabrication and integrationQIANGFEI XIA.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 955-965, issn 0947-8396, 11 p.Article

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO_x/TiO_y frameworks due to oxygen vacancy driftsYOON CHEOL BAE; AH RAHM LEE; JUNE SIK KWAK et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 1009-1013, issn 0947-8396, 5 p.Article

Dc current transport behavior in amorphous GeSe filmsDOO SEOK JEONG; PARK, Goon-Ho; LIM, Hyungkwang et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 1027-1032, issn 0947-8396, 6 p.Article

Investigation on microstructure and hydrogen generation performance of Al-rich alloysWANG, W; CHEN, D. M; YANG, K et al.International journal of hydrogen energy. 2010, Vol 35, Num 21, pp 12011-12019, issn 0360-3199, 9 p.Article

First-principles calculations of LaNi₄Al-H solid solution and hydridesZHANG, R. J; WANG, Y. M; CHEN, D. M et al.Acta materialia. 2006, Vol 54, Num 2, pp 465-472, issn 1359-6454, 8 p.Article

Unusual hydrogen absorption properties in graphite mechanically milled under various hydrogen pressures up to 6 MPaCHEN, D. M; ICHIKAWA, T; FUJII, H et al.Journal of alloys and compounds. 2003, Vol 354, pp L5-L9, issn 0925-8388Article

A bullous pemphigoid-like skin eruption after a chemical burnCHEN, D. M; FAIRLEY, J. A.Journal of the American Academy of Dermatology. 1998, Vol 38, Num 2, pp 337-340, issn 0190-9622, 2Article

Regeneration of simon poplar (Populus simonii) from protoplast cultureWANG, Y; HUANG, M. R; WEI, Z. M et al.Plant cell reports (Print). 1995, Vol 14, Num 7, pp 442-445, issn 0721-7714Article

Angle-resolved positronium emission spectroscopy = Spectroscopie d'émission de positronium à résolution angulaireCHEN, D. M; BERKO, S; CANTER, K. F et al.Physical review letters. 1987, Vol 58, Num 9, pp 921-924, issn 0031-9007Article

Measurement of positron reemission from thin single-crystal W(100) films = Mesure de la réémission de positrons à partir de couches minces monocristallines de W(100)CHEN, D. M; LYNN, K. G; PAREJA, R et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 7, pp 4123-4130, issn 0163-1829Article

Effect of hydrogen absorption/desorption cycling on hydrogen storage properties of a LaNi_3.8Al_1.0Mn_0.2 alloyLI, S. L; CHEN, W; LUO, G et al.International journal of hydrogen energy. 2012, Vol 37, Num 4, pp 3268-3275, issn 0360-3199, 8 p.Article

Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAMKÜGELER, Carsten; ROSEZIN, Roland; LINN, Eike et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 791-809, issn 0947-8396, 19 p.Article

Computational investigations into the operating window for memristive devices based on homogeneous ionic motionNOMAN, Mohammad; WENKAN JIANG; SALVADOR, Paul A et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 877-883, issn 0947-8396, 7 p.Article

Chaotic memristorDRISCOLL, T; PERSHIN, Y. V; BASOV, D. N et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 885-889, issn 0947-8396, 5 p.Article

Resistive switching behavior in a Ni―Ag₂Se―Ni nanowireLEE, N. J; AN, B. H; KOO, A. Y et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 897-900, issn 0947-8396, 4 p.Article

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applicationsRU HUANG; LIJIE ZHANG; DEJIN GAO et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 927-931, issn 0947-8396, 5 p.Article

Transport characteristics and surface potential distribution of electrically stressed TiO₂ single crystalsKIM, Haeri; KIM, Dong-Wook.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 949-953, issn 0947-8396, 5 p.Article

Impact of amorphous titanium oxide film on the device stability of Al/TiO₂/Al resistive memoryHU YOUNG JEONG; SUNG KYU KIM; JEONG YONG LEE et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 967-972, issn 0947-8396, 6 p.Article

Effect of milling atmosphere on the hydriding properties of a Mg-amorphous Zr_0.9Ti_0.1(Ni_0.57Mn_0.28V_0.1Co_0.05)_2.1 compositeLENG, H. Y; CHEN, D. M; LU, M. Q et al.Journal of alloys and compounds. 2003, Vol 361, pp 276-281, issn 0925-8388, 6 p.Article

Physiological changes accompanying the induction of salt tolerance in Eucalyptus microcorys shoots in tissue cultureCHEN, D. M; KEIPER, F. J; DE FILIPPIS, L. F et al.Journal of plant physiology. 1998, Vol 152, Num 4-5, pp 555-563, issn 0176-1617Article

Periorbital edema as an initial presentation of rosaceaCHEN, D. M; CROSBY, D. L.Journal of the American Academy of Dermatology. 1997, Vol 37, Num 2, pp 346-348, issn 0190-9622, 2Article

Surface doping and stabilization of Si(111) with boronBEDROSSIAN, P; MEADE, R. D; MORTENSEN, K et al.Physical review letters. 1989, Vol 63, Num 12, pp 1257-1260, issn 0031-9007, 4 p.Article

Tunneling images of gallium on a silicon surface: reconstructions, superlattices, and incommensurationCHEN, D. M; GOLOVCHENKO, J. A; BEDROSSIAN, P et al.Physical review letters. 1988, Vol 61, Num 25, pp 2867-2870, issn 0031-9007Article