Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodesTINJOD, F; DE MIERRY, P; STONE-SUNDBERG, J. L et al.Journal of crystal growth. 2005, Vol 285, Num 4, pp 450-458, issn 0022-0248, 9 p.Article

Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiCPORTAL, M; MICHON, A; CORDIER, Y et al.Journal of crystal growth. 2012, Vol 349, Num 1, pp 27-35, issn 0022-0248, 9 p.Article

AIGaN/GaN HEMTs on (001) silicon substratesJOBLOT, S; CORDIER, Y; SEMOND, F et al.Electronics Letters. 2006, Vol 42, Num 2, pp 117-118, issn 0013-5194, 2 p.Article

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article

Influence of the deposition conditions on the optical absorption of Ag-SiO₂ nanocermet thin filmsSELLA, C; CHENOT, S; REILLON, V et al.Thin solid films. 2009, Vol 517, Num 20, pp 5848-5854, issn 0040-6090, 7 p.Article

Demonstration of semipolar (11-22) lnGaN/ GaN blue-green light emitting diodeGÜHNE, T; DEMIERRY, P; NEMOZ, M et al.Electronics Letters. 2008, Vol 44, Num 3, pp 231-232, issn 0013-5194, 2 p.Article

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFETFONTSERE, A; PEREZ-TOMAS, A; PLACIDI, M et al.Microelectronic engineering. 2011, Vol 88, Num 10, pp 3140-3144, issn 0167-9317, 5 p.Article

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy : The critical role of growth temperatureCORDIER, Y; BARON, N; CHENOT, S et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2002-2005, issn 0022-0248, 4 p.Conference Paper

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contaminationCORDIER, Y; AZIZE, M; BARON, N et al.Journal of crystal growth. 2007, Vol 309, Num 1, pp 1-7, issn 0022-0248, 7 p.Article

Ultra-violet GaN/Al_0.5Ga_0.5N quantum dot based light emitting diodesBRAULT, J; DAMILANO, B; KAHOULI, A et al.Journal of crystal growth. 2013, Vol 363, pp 282-286, issn 0022-0248, 5 p.Article

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111)FONTSERE, A; PEREZ-TOMAS, A; PLACIDI, M et al.Microelectronics and reliability. 2012, Vol 52, Num 11, pp 2547-2550, issn 0026-2714, 4 p.Article

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structuresCORDIER, Y; AZIZE, M; BARON, N et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 948-954, issn 0022-0248, 7 p.Conference Paper

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)CORDIER, Y; SEMOND, F; MASSIES, J et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 393-396, issn 0022-0248, 4 p.Conference Paper

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patternsCORDIER, Y; SEMOND, F; BLARY, K et al.Materials science in semiconductor processing. 2009, Vol 12, Num 1-2, pp 16-20, issn 1369-8001, 5 p.Conference Paper

Raman spectroscopy of Si nanoparticles embedded in silica filmsSTENGER, I; GALLAS, B; JUSSERAND, B et al.EPJ. Applied physics (Print). 2008, Vol 44, Num 1, pp 51-57, issn 1286-0042, 7 p.Article

Study of the interface Si-nc/SiO₂ by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopySTENGER, I; GALLAS, B; SIOZADE, L et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 38, Num 1-2, pp 176-180, issn 1386-9477, 5 p.Conference Paper

Structural and luminescent properties of green emitting SrGa₂S₄:Eu thin films prepared by RF-sputteringCHARTIER, C; BARTHOU, C; BENALLOUL, P et al.Journal of crystal growth. 2003, Vol 256, Num 3-4, pp 305-316, issn 0022-0248, 12 p.Article