L'ARGILE DE KINSHASA EN TANT QUE MATERIAU ADOBE.CORDIER Y.1978; MATER. ET CONSTR.; FR.; DA. 1978; VOL. 11; NO 62; PP. 107-116; ABS. ANGL.; BIBL. 12 REF.Article

LA CLIMATISATION DU CENTRE ELECTRONIQUE DE LA BANQUE DE FRANCE A POITIERS. = THE BANQUE DE FRANCE COMPUTER CENTER AIR CONDITIONING INSTALLATION AT POITIERSCORDIER Y; GEORGET M.1977; CHAUFF. VENTIL. CONDITION.; FR.; DA. 1977; VOL. 53; NO 12; PP. 15-20Article

Problèmes d'exploitation liés aux chaînes d'huile = Operating problems associated to the oil production linesCORDIER, Y.Pétrole et techniques. 1987, Num 332, pp 33-38, issn 0152-5425Article

LA CLIMATISATION DU CENTRE D'INFORMATIQUE DE LA M.A.A.F. A NIORT. = AIR CONDITIONING OF THE M.A.A.F. COMPUTER CENTER AT NIORTCORDIER Y; FEVAL J.1977; CHAUFF. VENTIL. CONDITION.; FR.; DA. 1977; VOL. 53; NO 10; PP. 9-16Article

LABOUR, DEMI-LABOUR OU SEMIS DIRECT EN CONTINU: CONSEQUENCES GEOTECHNIQUESCORDIER Y; VITLOX O; FRANKINET M et al.1979; BULL. RECH. AGRON. GEMBLOUX; BEL; DA. 1979; VOL. 14; NO 2; PP. 121-142; ABS. ENG; BIBL. 2 REF.Article

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMTSOLTANI, A; BENMOUSSA, A; TOUATI, S et al.Diamond and related materials. 2007, Vol 16, Num 2, pp 262-266, issn 0925-9635, 5 p.Article

Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurementsAUBRY, R; JACQUET, J.-C; DELAGE, S. L et al.EPJ. Applied physics (Print). 2003, Vol 22, Num 2, pp 77-82, issn 1286-0042, 6 p.Article

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsCORDIER, Y; FERRE, D; CHAUVEAU, J.-M et al.Applied surface science. 2000, Vol 166, pp 442-445, issn 0169-4332Conference Paper

Thermal effects in AlGaN/GaN/Si high electron mobility transistorsSAIDI, I; CORDIER, Y; CHMIELOWSKA, M et al.Solid-state electronics. 2011, Vol 61, Num 1, pp 1-6, issn 0038-1101, 6 p.Article

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCORDIER, Y; MORENO, J.-C; BARON, N et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, issn 0022-0248, 6 p.Article

Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistorsAUBRY, R; DUA, C; JACQUET, J.-C et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 293-296, issn 1286-0042, 4 p.Conference Paper

Performances en puissance de HEMTs In_0.32Al_0.68As/In_0.33Ga_0.67As sur substrat GaAs = Power performances of HEMTs In0.32 Al0.68As/In0.33Ga0.67As on GaAs substratesZAKNOUNE, M; CORDIER, Y; BOLLAERT, S et al.Journées nationales de microélectronique et optoélectronique. 1999, 2Vol, 2 p.Conference Paper

Metamorphic In_0.3Ga_0.7As/In_0.29Al_0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realizationWIN, P; DRUELLE, Y; CAPPY, A et al.Applied physics letters. 1992, Vol 61, Num 8, pp 922-924, issn 0003-6951Article

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHzSOLTANI, A; GERBEDOEN, J.-C; CORDIER, Y et al.IEEE electron device letters. 2013, Vol 34, Num 4, pp 490-492, issn 0741-3106, 3 p.Article

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patternsCORDIER, Y; SEMOND, F; BLARY, K et al.Materials science in semiconductor processing. 2009, Vol 12, Num 1-2, pp 16-20, issn 1369-8001, 5 p.Conference Paper

Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layersCHAUVEAU, Jean-Michel; CORDIER, Y; KIM, H. J et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 112-117, issn 0022-0248, 6 p.Conference Paper

Effects of mismatch strain and alloy composition on the formation of inas islands on InAIAs templates : Special issue papersCORDIER, Y; MISKA, P; FERRE, D et al.Journal of electronic materials. 2001, Vol 30, Num 5, pp 453-458, issn 0361-5235Article

HEMT's capability for millimeter wave applicationsBOLLAERT, S; CORDIER, Y; ZAKNOUNE, M et al.Annales des télécommunications. 2001, Vol 56, Num 1-2, pp 15-26, issn 0003-4347Article

Molecular beam epitaxy of group-III nitrides on silicon substrates: Growth, properties and device applicationsSEMOND, F; CORDIER, Y; GRANDJEAN, N et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 501-510, issn 0031-8965Conference Paper

Microwave performance of 0.4μm gate metamorphic In_0.29Al_0.71As/In_0.3Ga_0.7As HEMT on GaAs substrateWIN, P; DRUELLE, Y; LEGRY, P et al.Electronics Letters. 1993, Vol 29, Num 2, pp 169-170, issn 0013-5194Article

Application de la gravure assistée par plasma Freon12/Helium à la réalisation de composants à effet de champ performants = Application of freon12/helium plasma assisted etching to high performance field effect compound realizationWIN, P; GRIMBERT, B; VANBREMEERSCH, J et al.Le Vide, les couches minces. 1991, Vol 47, Num 256, pp 310-312, issn 0223-4335, SUPConference Paper

Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiCPORTAL, M; MICHON, A; CORDIER, Y et al.Journal of crystal growth. 2012, Vol 349, Num 1, pp 27-35, issn 0022-0248, 9 p.Article

AIGaN/GaN HEMTs on (001) silicon substratesJOBLOT, S; CORDIER, Y; SEMOND, F et al.Electronics Letters. 2006, Vol 42, Num 2, pp 117-118, issn 0013-5194, 2 p.Article

Influence of crystal quality on electron mobility in AIGaN/GaN HEMTs grown on Si(111), SiC and GaN templatesCORDIER, Y; LORENZINI, P; FAURIE, J.-P et al.Journal de physique. IV. 2006, Vol 132, pp 365-368, issn 1155-4339, 4 p.Conference Paper

MBE growth of AlGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performancesCORDIER, Y; SEMOND, F; GAQUIERE, C et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 811-815, issn 0022-0248, 5 p.Conference Paper