au.\*:("DA SILVA, E. F")
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Post-irradiation dopant passivation in MOS capacitors exposed to high doses of x-raysDE VASCONCELOS, E. A; DA SILVA, E. F.Semiconductor science and technology. 1998, Vol 13, Num 11, pp 1313-1316, issn 0268-1242Article
11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)DA SILVA, E. F; DE AZEVEDO, W. M.Applied surface science. 2008, Vol 255, Num 3, issn 0169-4332, 183 p.Conference Proceedings
Simulation of the early stages of thin SiO2 film growthDA SILVA, E. F; STOSIC, B. D.Semiconductor science and technology. 1997, Vol 12, Num 8, pp 1038-1045, issn 0268-1242Article
Light scattering studies of magnon relaxation in NiF2 and FeF2:MnREZENDE, S. M; DA SILVA, E. F. JR.Physical review. B, Condensed matter. 1985, Vol 31, Num 1, pp 570-573, issn 0163-1829Article
Application of selective extraction techniques in metal-bearing phases identification : a South European case studyFONSECA, E. C; DA SILVA, E. F.Journal of geochemical exploration. 1998, Vol 61, Num 1-3, pp 203-212, issn 0375-6742Article
Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristicsPALMIERI, R; BOUDINOV, H; RADTKE, C et al.Applied surface science. 2008, Vol 255, Num 3, pp 706-708, issn 0169-4332, 3 p.Conference Paper
Effects of trichloroethane during oxide growth on radiation-induced interface traps in metal/SiO2/Si capacitorsDA SILVA, E. F. JR; NISHIOKA, Y; MA, T.-P et al.Applied physics letters. 1987, Vol 51, Num 16, pp 1262-1264, issn 0003-6951Article
Onion like growth and inverted many-particle energies in quantum dotsBIMBERG, D.Applied surface science. 2008, Vol 255, Num 3, pp 799-801, issn 0169-4332, 3 p.Conference Paper
Time-dependent evolution of SiO2/Si interface traps after repeated radiation damageNISHIOKA, Y; DA SILVA, E. F. JR; MA, T.-P et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3317-3319, issn 0021-8979Article
Two distinct interface trap peaks in radiation-damaged metal/SiO2/Si structuresDA SILVA, E. F. JR; NISHIOKA, Y; MA, T.-P et al.Applied physics letters. 1987, Vol 51, Num 4, pp 270-272, issn 0003-6951Article
Time-dependent evolution of interface traps in hot-electron damaged metal/SiO2/Si capacitorsNISHIOKA, Y; DA SILVA, E. F. JR; TSO-PING MA et al.IEEE electron device letters. 1987, Vol 8, Num 12, pp 566-568, issn 0741-3106Article
Numerical analysis of gate leakage current in AlGaN Schottky diodesOSVALD, J.Applied surface science. 2008, Vol 255, Num 3, pp 793-795, issn 0169-4332, 3 p.Conference Paper
Effect of workpiece geometry on the uniformity of nitrided layersALVES, C. JR; DA SILVA, E. F; MARTINELLI, A. E et al.Surface & coatings technology. 2001, Vol 139, Num 1, pp 1-5, issn 0257-8972Article
Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injectionNISHIOKA, Y; DA SILVA, E. F. JR; MA, T. P et al.Applied physics letters. 1988, Vol 52, Num 9, pp 720-722, issn 0003-6951Article
Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sourcesKAWAHARAZUKA, A; YOSHIBA, I; HORIKOSHI, Y et al.Applied surface science. 2008, Vol 255, Num 3, pp 737-739, issn 0169-4332, 3 p.Conference Paper
Assessment of electronic properties of InNxSb1-x for long-wavelength infrared detector applicationsBHUSAL, L; FREUNDLICH, A.Applied surface science. 2008, Vol 255, Num 3, pp 703-705, issn 0169-4332, 3 p.Conference Paper
Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currentsHORVATH, Zs. J.Applied surface science. 2008, Vol 255, Num 3, pp 743-745, issn 0169-4332, 3 p.Conference Paper
Intraband absorption and Stark effect in silicon nanocrystalsDE SOUSA, J. S; LEBURTON, J.-P; FREIRE, V. N et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155438.1-155438.8, issn 1098-0121Article
4th Workshop of Semiconductor Nanodevices and Nanostructured Materials (NanoSemiMat-4)DA SILVA, E. F; HENINI, M; SCOLFARO, L. M. R et al.Microelectronics journal. 2005, Vol 36, Num 11, issn 0959-8324, 124 p.Conference Proceedings
Trapping of majority carriers in SiO2/4H-SiC structuresPALMIERI, R; RADTKE, C; SILVA, M. R et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 12, issn 0022-3727, 125301.1-125301.6Article
Conductive polymer preparation under extreme or non-classical conditionsDE AZEVEDO, W. M; DE BARROS, R. A; DA SILVA, E. F et al.Journal of materials science. 2008, Vol 43, Num 4, pp 1400-1405, issn 0022-2461, 6 p.Article
Electrical characterization of high-k gate dielectrics on semiconductorsMA, T. P.Applied surface science. 2008, Vol 255, Num 3, pp 672-675, issn 0169-4332, 4 p.Conference Paper
One and two mode behaviors of surface phonon-polaritons of ternary mixed crystal filmsBAO, J; LIANG, X. X.Applied surface science. 2008, Vol 255, Num 3, pp 633-636, issn 0169-4332, 4 p.Conference Paper
Polarization catastrophe in nanostructures doped in photonic band gap materialsSINGH, Mahi R.Applied surface science. 2008, Vol 255, Num 3, pp 653-655, issn 0169-4332, 3 p.Conference Paper
Interface-related restriction to potential depth estimates for single Si/SiO2 quantum wellsDE SOUSA, J. S; FARIAS, G. A; FREIRE, V. N et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 8, pp 1927-1934, issn 0953-8984Article
