Radiative lifetimes of some levels belonging to the 2p⁴3p configuration of Ne IIDAS, M. B.Journal of quantitative spectroscopy & radiative transfer. 1993, Vol 50, Num 5, pp 561-563, issn 0022-4073Article

High-frequency performance limitations of millimeter-wave heterojunction bipolar transistorsDAS, M. B.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 5, pp 604-614, issn 0018-9383Article

Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: a comparison of MODFET, MESFET, and PBT structuresDAS, M. B.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1429-1440, issn 0018-9383Article

A high-aspect ratio design approach to millimeter-wave HEMT structuresDAS, M. B.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 1, pp 11-17, issn 0018-9383Article

Photo-induced current measurement for the characterization of deep-level traps in lattice-matched MODFETs on InP substrateSUNG, R; DAS, M. B.Solid-state electronics. 1992, Vol 35, Num 8, pp 1129-1137, issn 0038-1101Article

Effect of electric-field-induced mobility degradation on the velocity distribution in a sub-μm length channel of InGaAs/AlGaAs heterojunction MODFETARORA, V. K; DAS, M. B.Semiconductor science and technology. 1990, Vol 5, Num 9, pp 967-973, issn 0268-1242Article

An investigation of the MESFET end resistance using a distributed diode/resistance modelSIDDHESWAR CHAUDHURI; DAS, M. B.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2262-2268, issn 0018-9383Article

Noise modeling of 2-DEGFETsMISHRA, M; MURALIDHARAN, R; HARSH et al.SPIE proceedings series. 1998, pp 925-928, isbn 0-8194-2756-X, 2VolConference Paper

Designing optoelectronic integrated circuit (OEIC) receivers for high sensitivity and maximally flat frequency responseDAS, M. B; JAU-WEN CHEN; JOHN, E et al.Journal of lightwave technology. 1995, Vol 13, Num 9, pp 1876-1884, issn 0733-8724Article

Speed and sensitivity limitations of optoelectronic receivers based on MSM photodiode and millimeter-wave HBT's on InP substrateJOHN, E; DAS, M. B.IEEE photonics technology letters. 1992, Vol 4, Num 10, pp 1145-1148, issn 1041-1135Article

Experimental lifetimes of some levels belonging to the 3p⁴4d configuration of Ar IIDAS, M. B; BHATTACHARYA, R.Journal of physics. B. Atomic, molecular and optical physics (Print). 1991, Vol 24, Num 2, pp 423-426, issn 0953-4075, 4 p.Article

Extraction of electronic transport parameters in submicrometer gate-length MODFET'sSHIH-TSANG FU; DAS, M. B.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 8, pp 1719-1729, issn 0018-9383Article

A selectively contacted dual-channel HEMTRAVI KHANNA; DAS, M. B; SMITH, D. D et al.IEEE electron device letters. 1989, Vol 10, Num 12, pp 531-533, issn 0741-3106Article

Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped fet structures using carrier saturation velocity/charge-control modelDAS, M. B; ROSZAK, M. L.Solid-state electronics. 1985, Vol 28, Num 10, pp 997-1005, issn 0038-1101Article

Determination of 2-D electron-gas carrier mobility in short gate-length MODFET's by direct elimination of parasitic resistance effectsLIU, S. M; DAS, M. B; KOPP, W et al.IEEE electron device letters. 1985, Vol 6, Num 11, pp 594-596, issn 0741-3106Article

Experimental lifetime of some level belonging to the 5p⁴6d configuration of XellDAS, M. B; KARMAKAR, S.The European physical journal. D, Atomic, molecular and optical physics (Print). 2006, Vol 40, Num 3, pp 339-341, issn 1434-6060, 3 p.Article

Doping behaviour of In_0.53Ga_0.47As and InP grown by metalorganic vapour phase epitaxyARORA, B. M; GOKHALE, M; SHAH, A et al.SPIE proceedings series. 1998, pp 289-292, isbn 0-8194-2756-X, 2VolConference Paper

Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency responseKIM, J. B; KIM, M. J; KIM, S. J et al.Optical and quantum electronics. 1997, Vol 29, Num 10, pp 953-959, issn 0306-8919Article

Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performanceJAU-WEN CHEN; MOHAN THURAIRAJ; DAS, M. B et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 465-475, issn 0018-9383Article

Determination of source and drain series resistances of ultra-short gate-length MODFET'sLIU, S.-M. J; SHIH-TSANG FU; MOHAN THURAIRAJ, M et al.IEEE electron device letters. 1989, Vol 10, Num 2, pp 85-87, issn 0741-3106Article

Determination of mobility in modulation-doped FET's using magnetoresistance effectLIU, S.-M. J; DAS, M. B.IEEE electron device letters. 1987, Vol 8, Num 8, pp 355-357, issn 0741-3106Article

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10^-2 to 10⁸ HzLIU, S.-M. J; DAS, M. B; CHIN-KUN PENG et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 576-582, issn 0018-9383Article

On the determination of source and drain series resistances ofMESFET'sCHAUDHURI, S; DAS, M. B.IEEE electron device letters. 1984, Vol 5, Num 7, pp 244-246, issn 0741-3106Article

Two-dimensional electron gas (2-DEG) interaction in a double-heterostructure selectively contacted field-effect transistorRAVI KHANNA; DAS, M. B.IEEE electron device letters. 1993, Vol 14, Num 4, pp 182-184, issn 0741-3106Article

Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistorsSHIH-TSANG FU; LIU, S.-M. J; DAS, M. B et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 4, pp 888-901, issn 0018-9383, 14 p.Article